公开(公告)号：US20030181746A1

公开(公告)日：2003-09-25

申请号：US10346275

申请日：2003-01-17

申请人： Shipley Company, L.L.C.

发明人： Deodatta Vinayak Shenai-Khatkhate ,  Michael Brendan Power ,  Artashes Amamchyan ,  Ronald L. DiCarlo JR.

IPC分类号： B05D005/12 ,  C07F009/00

CPC分类号： C07F9/72 ,  C07F9/5068 ,  C07F9/52 ,  C23C16/301

摘要： Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3nulln , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

摘要翻译： 公开了通过VA族金属三卤化物与有机锂试剂或式RnM 1 X 3-n的化合物的反应制备高产率和高纯度的单烷基基团VA金属二卤化物化合物的方法，其中R是烷基 ，M 1是IIIA族金属，X是卤素，n是1至3的整数。这种单烷基基团VA金属二卤化物基本上不含氧化杂质，醚类溶剂和金属杂质。 通过还原这种单烷基VA族金属二卤化物化合物，可以容易地以高产率和高纯度制备单烷基基团VA金属二氢化合物。

公开(公告)号：US20030119312A1

公开(公告)日：2003-06-26

申请号：US10325313

申请日：2002-12-19

申请人： MICRON TECHNOLOGY, INC.

发明人： Brian A. Vaartstra

IPC分类号： H01L021/44

CPC分类号： C23C16/301 ,  C07F5/00 ,  C07F5/065 ,  C07F5/066 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

摘要翻译： 使用IIIA族金属络合物在基板上形成膜的方法。 络合物和方法特别适用于使用化学气相沉积技术和系统制备半导体结构。

公开(公告)号：US20020102847A1

公开(公告)日：2002-08-01

申请号：US09956540

申请日：2001-09-17

发明人： Paul R. Sharps ,  Hong Qi Hou ,  Nein-Yi Li ,  Ravi Kanjolia

IPC分类号： H01L021/20 ,  H01L021/36 ,  H01L021/44

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/403 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/078 ,  H01L31/1844 ,  Y02E10/544

摘要： TBHy is demonstrated as an efficient and a less carbon-containing N precursor for the growth of high-quality InGaAsN by MOCVD at lower growth temperatures. The photovoltaic characteristics of 1.20 eV InGaAsN solar cells, such as open-circuit voltage, short-circuit current, fill factor and efficiency are improved significantly by using TBHy compared to using DMHy. This demonstration can also be applied to other InGaAsN-based optoelectronic and electronic devices. Therefore, this invention is extremely important to expedite the demonstration of next-generation prototype products such as 1.3 nullm-InGaAsN-epitaxial VCSELs for high-speed optical communications, low-power Npn InGaP/InGaAsN/GaAs HBTs and InGaP/AlGaAs/InGaAsN HEMTs for wireless applications, and high-efficiency multiple-junction InGaP/GaAs/InGaAsN/Ge solar cells for space power systems.

摘要翻译： TBHy被证明是通过MOCVD在较低生长温度下生长高质量InGaAsN的有效且含碳少的N前体。 与使用DMHy相比，使用TBHy，1.20 eV InGaAsN太阳能电池的光电特性，如开路电压，短路电流，填充因子和效率都得到显着提高。 该演示也可以应用于其他基于InGaAsN的光电子和电子设备。 因此，本发明对于加速下一代原型产品的展示是非常重要的，例如用于高速光通信的1.3mum-InGaAsN外延VCSEL，低功率Npn InGaP / InGaAsN / GaAs HBT和InGaP / AlGaAs / InGaAsN HEMT 用于无线应用，以及用于空间电力系统的高效率多结InGaP / GaAs / InGaAsN / Ge太阳能电池。

公开(公告)号：US6160661A

公开(公告)日：2000-12-12

申请号：US790123

申请日：1997-01-29

申请人： Paul Klocek ,  Peter Taborek

发明人： Paul Klocek ,  Peter Taborek

IPC分类号： C23C16/30 ,  G01J5/02 ,  G01J5/04 ,  G02B1/10 ,  G02B1/11 ,  F21V9/04

CPC分类号： G01J5/08 ,  C23C16/301 ,  G01J5/04 ,  G01J5/046 ,  G01J5/048 ,  G01J5/0875 ,  G02B1/10 ,  G02B1/105 ,  G02B1/115 ,  G02B1/14

摘要： An electro-optic system 10 is described which comprises an infrared sensor 12 and a processing unit 14 protected by a protective infrared transmissive window 16. The window 16 comprises a substrate layer 18 which may comprise gallium arsenide, zinc selenide, zinc sulfide or germanium. A protective layer 22 of gallium phosphide is formed outwardly from the substrate layer 18. An anti-reflective coating 20 is formed inwardly from substrate layer 18 and an outward anti-reflective coating 26 is formed outwardly from protective layer 22. The incorporation of protective layer 22 allows for excellent impact and wear resistance without interfering with the optical characteristics of the protective window 16.

摘要翻译： 描述了一种电光系统10，其包括由保护性红外透射窗16保护的红外传感器12和处理单元14.窗口16包括可包括砷化镓，硒化锌，硫化锌或锗的基底层18。 从衬底层18向外形成磷化硅保护层22.抗反射涂层20从衬底层18向内形成，并且向外的抗反射涂层26从保护层22向外形成。保护层的结合 22允许优异的冲击和耐磨性而不会妨碍保护窗16的光学特性。

公开(公告)号：US06020253A

公开(公告)日：2000-02-01

申请号：US267911

申请日：1999-03-05

申请人： Robert W. Gedridge, Jr. ,  Thomas J. Groshens ,  Kelvin T. Higa

发明人： Robert W. Gedridge, Jr. ,  Thomas J. Groshens ,  Kelvin T. Higa

IPC分类号： C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/316 ,  H01L21/365 ,  H01L21/20

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/38 ,  C30B29/40 ,  H01L21/02524 ,  H01L21/02543 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/31625

摘要： A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.

摘要翻译： 使用新的化合物叔丁基二（二甲基氨基）膦，（（CH3）3C）（（CH3）2N）2P作为通过化学气相沉积形成含磷半导体材料的前体。 通过三氯化磷PX3与叔丁基格氏试剂（（CH3）3C）MgX反应制备叔丁基双（二甲基氨基）膦。 所得产物用二甲基酰胺试剂LiN（CH 3）2处理。 然后从反应混合物中回收叔丁基双（二甲氨基）膦。 含磷的半导体材料通过化学气相沉积形成，通过使载气鼓泡通过新化合物，然后将（（CH 3）3 C）（（CH 3）2 N）2 P与载气输送到加热的基底。 然后将周期表第II，III，V和VI族的附加元素沉积在衬底上以形成含磷的半导体材料。

公开(公告)号：US5782979A

公开(公告)日：1998-07-21

申请号：US489773

申请日：1995-06-13

申请人： Nobuaki Kaneno ,  Hirotaka Kizuki ,  Masayoshi Takemi ,  Kenzo Mori

发明人： Nobuaki Kaneno ,  Hirotaka Kizuki ,  Masayoshi Takemi ,  Kenzo Mori

IPC分类号： H01L21/205 ,  C23C16/30 ,  C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/683 ,  H01S5/00 ,  C23C16/00

CPC分类号： C30B25/02 ,  C23C16/301 ,  C23C16/4581 ,  C30B25/12 ,  C30B29/40

摘要： A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body, a GaAs polycrystalline film with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 .mu.m or more at a temperature higher than the epitaxial growth temperature of 575.degree. C. During the MOCVD process, the emissivity of the molybdenum substrate holder is stable at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of PH.sub.3 gas on the substrate holder is stable at a value near the decomposition ratio on the wafer, whereby any variation of the incorporation ratio of P atoms in the grown InGaAsP, i.e., a variation of the composition of the InGaAsP, is reduced and run-to-run variations of the composition of the grown crystal are reduced.

摘要翻译： 用于MOCVD并支撑晶体生长所进行的晶片的衬底保持器包括钼保持器主体，在不存在晶片的钼保持器主体的表面的一部分上生长的具有平坦表面的GaAs多晶膜，以及InP 在GaAs多晶膜上生长的多晶膜。 在比575℃的外延生长温度高的温度下，将多晶膜生长至0.3μm以上的厚度。在MOCVD工艺中，钼基板保持器的发射率在发射率附近稳定 因此衬底保持器上的PH3气体的分解比例在晶片分解比附近稳定，因此生长的InGaAsP中P原子的掺入比例，即 ，InGaAsP的组成的变化减小，并且生长晶体的组成的运行变化减小。

公开(公告)号：US5415129A

公开(公告)日：1995-05-16

申请号：US71085

申请日：1993-06-04

申请人： C. Joseph Calbick ,  Mark A. Kuck ,  Donald H. Valentine

发明人： C. Joseph Calbick ,  Mark A. Kuck ,  Donald H. Valentine

IPC分类号： B01J31/02 ,  C07B61/00 ,  C07F9/72 ,  C23C16/30 ,  C30B25/02

CPC分类号： C07F9/723 ,  C23C16/301 ,  Y02P20/582 ,  Y10S252/951 ,  Y10S438/935

摘要： Alkyl arsines are made by a reaction of gaseous arsine and the corresponding gaseous olefin in contact with at least one Bronsted acid catalyst. Products produced thereby are mono- and di-substituted arsines, e.g. alkyl and di-alkyl arsines, which contain substantially no metallic or oxygenating impurities.

摘要翻译： 烷基胂通过气态胂和与至少一种布朗斯台德酸催化剂接触的相应气态烯烃的反应制备。 由此产生的产物是单 - 和二 - 取代的胂，例如 烷基和二烷基胂，其基本上不含金属或含氧杂质。

公开(公告)号：US5124278A

公开(公告)日：1992-06-23

申请号：US586845

申请日：1990-09-21

申请人： David A. Bohling ,  Gregory T. Muhr ,  Sherri L. Bassner

发明人： David A. Bohling ,  Gregory T. Muhr ,  Sherri L. Bassner

IPC分类号： C23C16/30 ,  C30B25/02

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/40 ,  Y10S148/016 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/065

摘要： The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris(dialkylamino) arsenic (As(NR.sub.2).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

摘要翻译： 本发明涉及金属有机胺作为反应沉积应用中金属供体源化合物的用途。 更具体地，本发明涉及氨基取代的金属供体源化合物M（NR2）3-xHx的用途，其中R是有机基团，烷基或氟代烷基，x小于或等于2，M = As， Sb或P，在需要沉积相应元素的工艺中。 这些用途包括许多不同的过程; 化合物半导体材料如GaAs，InP，AlGaAs等的金属有机气相外延; 掺杂SiO 2或硼硅酸盐基玻璃以增强玻璃的回流性能; 硅外延材料的原位n型掺杂; 采购砷或磷进行离子注入; 化学束外延（或MOMBE）; 以及扩散掺杂到诸如二氧化硅，硅和多晶硅的电子材料中。 这些类型的材料通常具有高挥发性，低毒性，不稳定的金属 - 配体键和稳定的分解产物。 具体来说，已经确定了在制造硅集成电路，III-V族化合物半导体，光电子学和其他电子器件中使用三（二烷基氨基）砷（As（NR 2）3）作为胂的替代物。

公开(公告)号：US4914052A

公开(公告)日：1990-04-03

申请号：US302260

申请日：1989-01-27

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： C23C16/50 ,  C23C16/30 ,  C23C16/452 ,  C23C16/511

CPC分类号： C23C16/452 ,  C23C16/301 ,  Y10S148/045 ,  Y10S148/065

摘要： A process for the formation of a functional deposited film containing atoms belonging to the group III and V of the peridoical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group III compound (1) and a group IV compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.

公开(公告)号：US4814203A

公开(公告)日：1989-03-21

申请号：US156312

申请日：1988-02-16

申请人： Robert N. DePriest

发明人： Robert N. DePriest

IPC分类号： C23C16/30 ,  C23C16/00

CPC分类号： C23C16/301

摘要： In a vapor deposition process (e.g. MOCVD) for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a C.sub.1 to C.sub.3 monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas.

摘要翻译： 在用于通过在加热的底物上热分解至少一种蒸气有机砷化合物来在基底上产生含砷膜的气相沉积方法（例如MOCVD）中，有机砷化合物基本上由携带的C1-C3单烷基胂组成 通过惰性载气流向加热的基底。