公开(公告)号：US09418191B2

公开(公告)日：2016-08-16

申请号：US13886062

申请日：2013-05-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G03F7/00 ,  G06F17/50 ,  G03F1/00 ,  G03F1/78 ,  H01J37/302 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/144 ,  G03F1/78 ,  G03F7/70283 ,  G03F7/70441 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.

公开(公告)号：US20160004161A1

公开(公告)日：2016-01-07

申请号：US14854637

申请日：2015-09-15

Applicant: Yongseok Jung ,  SangHee Lee

Inventor： Yongseok Jung ,  SangHee Lee

IPC: G03F7/20 ,  H01J37/317 ,  G03F1/20

CPC classification number: G03F7/2061 ,  G03F1/20 ,  G03F7/20 ,  G03F7/2059 ,  G03F7/2063 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/3045 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.

公开(公告)号：US20150338737A1

公开(公告)日：2015-11-26

申请号：US14739989

申请日：2015-06-15

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

IPC: G03F7/20 ,  G03F1/70

CPC classification number: G03F7/2061 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2063 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31771

Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.

Abstract translation: 提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。 在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。 模拟用于确定将在表面上产生的图案。

公开(公告)号：US20150262791A1

公开(公告)日：2015-09-17

申请号：US14481951

申请日：2014-09-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Keisuke YAGAWA

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: An electron beam drawing method is an electron beam drawing method for manufacturing a lithography original plate in a variable shaped beam method. The electron beam drawing method includes extracting a hot spot in a circuit pattern layout of the lithography original plate at which a circuit pattern in the circuit pattern layout and a preset hot spot drawing pattern agree with each other. The electron beam drawing method further includes generating drawing data representing the circuit pattern layout with at least a part of the circuit pattern at the extracted hot spot replaced with a relieving drawing pattern. The electron beam drawing method further includes performing drawing on a resist applied to the substrate in the variable shaped beam method based on the drawing data.

Abstract translation: 电子束描绘法是用于制造可变形光束法中的光刻原版的电子束描绘方法。 电子束绘制方法包括在电路图案布局中的电路图案和预设热点绘制图案彼此一致的光刻原版板的电路图案布局中提取热点。 电子束描绘方法还包括：在提取的热点处的电路图案的至少一部分被替换为缓解图形，生成表示电路图案布局的绘图数据。 电子束描绘方法还包括基于绘图数据对可变形波束方法中施加到基底的抗蚀剂进行拉伸。

公开(公告)号：US09063440B2

公开(公告)日：2015-06-23

申请号：US13370835

申请日：2012-02-10

Applicant: Yasuo Kato

Inventor： Yasuo Kato

IPC: G21K5/00 ,  G03F1/78 ,  H01J37/302 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01J2237/31796

Abstract: A charged particle beam writing apparatus includes a storage unit to store each pattern data of plural figure patterns arranged in each of plural small regions made by virtually dividing a writing region of a target workpiece to be written on which resist being coated. The charged particle beam writing apparatus further including an assignment unit to assign each pattern data of each figure pattern to be arranged in each of the plural small regions concerned, and a writing unit to write, for each of plural groups, each figure pattern in each of the plural small regions concerned by using a charged particle beam.

Abstract translation: 带电粒子束写入装置包括：存储单元，用于存储多个图形图案中的每个图案数据，所述多个图形图案布置在通过实际上划分要涂覆的抗蚀剂的目标工件的写入区域而制成的多个小区域中。 所述带电粒子束写入装置还包括分配单元，用于分配要布置在所述多个小区域中的每一个中的每个图形模式的每个图案数据;以及写入单元，用于为每个所述多个组中的每一个写入每个图形模式 的多个小区域使用带电粒子束。

公开(公告)号：USRE45552E1

公开(公告)日：2015-06-09

申请号：US13689665

申请日：2012-11-29

Applicant: Mapper Lithography IP B.V.

Inventor： Pieter Kruit ,  Remco Jager ,  Stijn Willem Herman Karel Steenbrink ,  Marco Jan-Jaco Wieland

IPC: G21K5/04 ,  H01J37/317

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70508 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31771 ,  H01L21/67282

Abstract: The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

Abstract translation: 本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而将所述图案划分在包括网格单元的格子上 所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及 其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。

公开(公告)号：US08969837B2

公开(公告)日：2015-03-03

申请号：US14297030

申请日：2014-06-05

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto

IPC: G21K1/087 ,  H01J37/317 ,  G21K5/04

CPC classification number: H01J37/3177 ,  G21K5/04 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31762 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes dividing a maximum irradiation time per a shot into a digit number of first irradiation time periods, each of which is calculated by multiplying a corresponding second gray scale value by the quantization unit, where second gray scale values are gray scale values defined in decimal numbers converted from each digit value of data of binary numbers; dividing second irradiation time periods, which are a part of the first irradiation time periods into third irradiation time periods; dividing irradiation of each beam into the first irradiation steps of the third irradiation time periods and second irradiation steps of the remaining undivided first irradiation time periods; and irradiating a target object, in order, with the multi beams such that the groups are respectively composed of combination of at least two irradiation steps of first irradiation steps and second irradiation steps and the groups continue in order.

Abstract translation: 一种多带电粒子束写入方法，其特征在于，将每个镜头的最大照射时间除以第一照射时间段的数字数，其中每个照射时间段通过将相应的第二灰度值乘以量化单元而计算，其中第二灰度值为 以二进制数字的数据的每个数字值转换的十进制数中定义的灰度值; 将作为第一照射时间段的一部分的第二照射时间段分割为第三照射时间段; 将每个光束的照射分成第三照射时间段的第一照射步骤和剩余的未分割的第一照射时间段的第二照射步骤; 并且依次用多光束照射目标物体，使得所述组分别由第一照射步骤和第二照射步骤的至少两个照射步骤的组合构成，并且所述组依次继续。

公开(公告)号：US20140229904A1

公开(公告)日：2014-08-14

申请号：US14257874

申请日：2014-04-21

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Ingo Bork

IPC: G06F17/50

CPC classification number: G03F7/2063 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  G03F7/2037 ,  G06F17/5009 ,  G06F17/5081 ,  H01J37/147 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.

Abstract translation: 在用于对带电粒子束光刻进行压裂或掩模数据准备或掩模处理校正的方法中，确定将在表面上形成图案的多个镜头，其中确定镜头，以便将所得到的图案的灵敏度降低到 光束模糊（＆bgr; f）。 在一些实施方案中，通过改变图案的一部分的带电粒子表面剂量来减少对于b的变化的敏感性。 还公开了在表面上形成图案和用于制造集成电路的方法，其中减小了对于图像变化f的图案敏感度。

公开(公告)号：US08464186B2

公开(公告)日：2013-06-11

申请号：US13011165

申请日：2011-01-21

Applicant: Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Chia-Ping Chiang ,  Cheng Kun Tsai ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/144 ,  G03F1/78 ,  G03F7/70283 ,  G03F7/70441 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31771 ,  H01L21/0274 ,  H01L21/0275

Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.

Abstract translation: 使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。 第一多边形形状占据第一虚拟层并且包括第一组像素。 该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。 第二多边形形状占据第二虚拟层。 该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

公开(公告)号：US08458624B2

公开(公告)日：2013-06-04

申请号：US13192124

申请日：2011-07-27

Applicant: Jin Choi ,  Sang-hee Lee ,  Seong-june Min

Inventor： Jin Choi ,  Sang-hee Lee ,  Seong-june Min

IPC: G06F17/50

CPC classification number: G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。