公开(公告)号：US20030199168A1

公开(公告)日：2003-10-23

申请号：US10419199

申请日：2003-04-21

申请人： Speedfam Co., Ltd.

发明人： Michihiko Yanagisawa ,  Kazuyuki Tsuruoka

IPC分类号： H01L021/461

CPC分类号： H01J37/32009 ,  H01J37/32376 ,  H01L21/3065

摘要： In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.

摘要翻译： 在本地干蚀刻方法中，通过测量晶片表面预先获得半导体晶片的位置厚度数据，通过滤波和喷嘴 - 晶片相对速度来切割比预定空间波长短的位置厚度数据的分量，以平坦化 使用滤波后的数据计算表面。

公开(公告)号：US09111728B2

公开(公告)日：2015-08-18

申请号：US13356962

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01J37/077 ,  H01J37/065 ,  H01J37/32 ,  H01J37/16

CPC分类号： H01J37/32357 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32596

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。 在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

公开(公告)号：US20140231242A1

公开(公告)日：2014-08-21

申请号：US14234849

申请日：2012-07-25

申请人： VALEO VISION

发明人： Marc Brassier ,  Frederic Moret ,  Frederic Bretagnol

IPC分类号： C23C14/34

CPC分类号： C23C14/3442 ,  C23C16/513 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32376 ,  H01J37/32422 ,  H01J37/32431 ,  H01J37/32899 ,  H01J37/32935

摘要： An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling each generator independently of any other generator. These controlling means comprise means for activating/deactivating the generator. The invention also relates to a process for treating a surface of an object.

摘要翻译： 用于处理物体表面的设备包括其中要放置物体的真空室，以及与真空室连通的用于处理物体表面的装置，包括至少两个等离子体发生器。 该装置还包括用于独立于任何其它发电机控制每个发电机的装置。 这些控制装置包括用于启动/停用发生器的装置。 本发明还涉及一种用于处理物体表面的方法。

公开(公告)号：US20130312913A1

公开(公告)日：2013-11-28

申请号：US13959595

申请日：2013-08-05

申请人： Neungho Shin ,  Patrick Chung ,  Yunsang Kim

发明人： Neungho Shin ,  Patrick Chung ,  Yunsang Kim

IPC分类号： H01L21/67

CPC分类号： H01L21/67069 ,  H01J37/32366 ,  H01J37/32376 ,  H01J37/32568 ,  H01L21/2007 ,  H01L21/30625 ,  H01L21/3083 ,  H01L21/67017

摘要： An arrangement for depositing a film at a bevel edge of a substrate in a plasma chamber. The arrangement includes a gas delivery system for supplying gas into the chamber. The arrangement also includes a pair of electrodes including a movable electrode and a stationary electrode, wherein the substrate is disposed on one of the pair of electrodes. The arrangement further includes a gap controller module configured for adjusting an electrode gap between the pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of the substrate. The gap distance is also dimensioned such that a plasma-sustainable condition around the bevel edge of the substrate is formed. The arrangement moreover includes a heater disposed below the substrate and powered by an RE source, wherein the heater is maintained at a chuck temperature conducive for facilitating film deposition on the bevel edge of the substrate.

摘要翻译： 一种用于在等离子体室中的衬底的斜边缘处沉积膜的布置。 该装置包括用于将气体供应到室中的气体输送系统。 该布置还包括一对电极，其包括可动电极和固定电极，其中，所述基板设置在所述一对电极中的一个上。 该装置还包括间隙控制器模块，其配置用于将一对电极之间的电极间隙调整到间隔距离，间隙距离被配置为防止等离子体在衬底的中心部分上形成。 间隙距离的尺寸也被设计成使得形成在基板的斜边缘周围的等离子体可持续状态。 该装置还包括设置在基板下方并由RE源供电的加热器，其中加热器保持在有利于在衬底的斜边缘上的膜沉积的卡盘温度。

公开(公告)号：US08558134B2

公开(公告)日：2013-10-15

申请号：US12410672

申请日：2009-03-25

申请人： Yusuke Hirayama

发明人： Yusuke Hirayama

IPC分类号： B23K9/02

CPC分类号： H01J37/32376

摘要： A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.

摘要翻译： 一种等离子体处理装置，包括：本体等离子体发生器，其设置在面对安装台，用于在气密处理室中安装待处理的基板，用于允许等离子体在待处理的基板上局部反应; 以及用于移动局部等离子体发生器的移动单元。 局部等离子体发生器具有用于排出偏移气体的偏移气体排出机构，其抵消从局部等离子体发生器的内部排放的气体的等离子体的反应。

公开(公告)号：US20110132874A1

公开(公告)日：2011-06-09

申请号：US12957923

申请日：2010-12-01

申请人： Richard Gottscho ,  Rajinder Dhindsa ,  Mukund Srinivasan

发明人： Richard Gottscho ,  Rajinder Dhindsa ,  Mukund Srinivasan

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/32366 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/513 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32376 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.

摘要翻译： 公开了一种等离子体蚀刻处理工具。 等离子体蚀刻处理工具，包括用于支撑具有衬底表面积的衬底的衬底支撑件，包括具有定向在衬底支撑件上的开放侧的等离子体微室的处理头，等离子体微室的开放侧具有处理区域 小于衬底表面积，限定在衬底支撑件和处理头之间的密封结构以及连接到等离子体微室和衬底支撑件的电源。 还公开了一种用于执行等离子体蚀刻的方法。

公开(公告)号：US20090229972A1

公开(公告)日：2009-09-17

申请号：US12403055

申请日：2009-03-12

申请人： R. Mohan Sankaran ,  R. Craig Virnelson

发明人： R. Mohan Sankaran ,  R. Craig Virnelson

IPC分类号： C23C14/00 ,  H05H1/24

CPC分类号： H01J37/32825 ,  C23C14/165 ,  C23C14/34 ,  C23F4/00 ,  G01N21/658 ,  H01J37/32009 ,  H01J37/32376 ,  H01J37/32596 ,  H05H1/48

摘要： An apparatus for producing features having a surface roughness in a substrate includes, according to one embodiment, a conductive first electrode disposed in opposition to a conductive second electrode, where the first and second electrodes are spaced apart from each other by a distance adapted for generating a microplasma therebetween. The second electrode is a substrate, and the first electrode and the substrate are configured for relative motion in at least two opposing directions. A feature comprising a surface roughness of greater than about 10 nm is formed in the substrate when the microplasma is generated. Preferably the feature has a width of about 300 nm or less. A plurality of the features (e.g., an ordered array of features) may be produced in the substrate, if desired. The substrate may be a silver-coated glass substrate used for surface-enhanced Raman scattering (SERS) analysis of biochemical molecules.

摘要翻译： 一种用于制造在基板中具有表面粗糙度的特征的装置包括根据一个实施例的与导电第二电极相对设置的导电第一电极，其中所述第一和第二电极彼此间隔开适当的距离 其间存在微血管。 第二电极是衬底，并且第一电极和衬底被构造成在至少两个相对的方向上相对运动。 当产生微血浆时，在基底中形成包括大于约10nm的表面粗糙度的特征。 优选地，该特征具有约300nm或更小的宽度。 如果需要，可以在衬底中产生多个特征（例如，有序阵列的特征）。 基底可以是用于生化分子的表面增强拉曼散射（SERS）分析的银涂覆的玻璃基底。

公开(公告)号：US20080160205A1

公开(公告)日：2008-07-03

申请号：US11966554

申请日：2007-12-28

申请人： Steven M. Gasworth

发明人： Steven M. Gasworth

IPC分类号： H05H1/26 ,  C23C16/00

CPC分类号： H05H1/24 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/513 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32376 ,  H05H1/42

摘要： A system for coating a side surface of a moving substrate. The system includes an array of plasma sources, a first plurality of orifices located upstream of the array and a second plurality of orifices located downstream of the array. A coating reagent is injected from each orifice into a plasma jet issuing from plasma source associated with that orifice. A controller modulates the flow of coating reagent and the flow flush gas to the orifices according to the contours of the substrate and to the position of the substrate relative to the array. An additional plasma array and set of orifices may be employed to coat the opposite side surface of the substrate.

摘要翻译： 一种用于涂覆移动衬底的侧表面的系统。 该系统包括等离子体源的阵列，位于阵列上游的第一多个孔口和位于阵列下游的第二多个孔口。 从每个孔喷射涂层试剂到与该孔相关联的等离子体源发射的等离子体射流。 控制器根据衬底的轮廓和衬底相对于阵列的位置来调节涂层试剂和流入冲洗气体到孔的流动。 可以使用附加的等离子体阵列和一组孔来涂覆衬底的相对侧表面。

公开(公告)号：US20080127892A1

公开(公告)日：2008-06-05

申请号：US11761059

申请日：2007-06-11

申请人： Tai Ho Kim

发明人： Tai Ho Kim

IPC分类号： H01L21/00 ,  B05C11/00

CPC分类号： H01L21/67069 ,  C23C16/045 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509 ,  H01J37/32357 ,  H01J37/32376

摘要： A plasma processing apparatus includes a process chamber having a wafer mounted therein such that a plasma process is performed on the wafer, and an X-axis scanning injector mounted in the process chamber such that the X-axis scanning injector supplies a first local plasma of a reaction gas to a local region on the wafer. The X-axis scanning injector is movable in the X-axis direction to scan the first local plasma over the entire area of the wafer. A Y-axis scanning injector is mounted in the process chamber such that the Y-axis scanning injector supplies a second local plasma of a reaction gas to a local region on the wafer. The Y-axis scanning injector is movable in the Y-axis direction to scan the second local plasma over the entire area of the wafer. The deposition accomplished by the local plasmas over the entire area of the wafer by the X-axis and Y-axis scanning operations.

摘要翻译： 等离子体处理装置包括处理室，其中安装有晶片，使得在晶片上执行等离子体处理，以及安装在处理室中的X轴扫描注射器，使得X轴扫描注射器提供第一局部等离子体 对晶片上的局部区域的反应气体。 X轴扫描注射器可沿X轴方向移动，以在晶片的整个区域上扫描第一局部等离子体。 Y轴扫描注射器安装在处理室中，使得Y轴扫描注射器将反应气体的第二局部等离子体提供给晶片上的局部区域。 Y轴扫描注射器可沿Y轴方向移动，以在晶片的整个区域上扫描第二局部等离子体。 通过X轴和Y轴扫描操作，通过局部等离子体在晶片的整个区域上实现的沉积。

公开(公告)号：US20080099441A1

公开(公告)日：2008-05-01

申请号：US11962012

申请日：2007-12-20

申请人： Jeffrey Carr

发明人： Jeffrey Carr

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H01L21/465

CPC分类号： H01J37/32376 ,  C23C16/0245 ,  C23C16/047 ,  C23C16/513 ,  H01L21/31051 ,  H05H1/30

摘要： A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.

摘要翻译： 一种用于成形工件表面的方法，包括定位工件和包括三个同心布置的管的感应耦合等离子体（炬）手电筒中的至少一个。 将等离子体气体引入ICP喷枪的外管，并且能量从射频（RF）电源传送到等离子体气体，以在ICP焊枪的至少部分的下游产生激发区域。 将反应性反应性前体引入激发区，并且将辅助气体引入中间管以控制激发区相对于ICP炬的位置，从而形成受控分布的反应性物质。 通过用至少一部分反应性物质从工件的表面除去材料并且用至少一部分反应性物质将材料添加到工件的表面来成形该表面。