公开(公告)号：US20170110527A1

公开(公告)日：2017-04-20

申请号：US14786158

申请日：2015-05-20

申请人： Shenzhen China Star Optoelectronics Technology Co. , Ltd.

发明人： Wenhui Li

IPC分类号： H01L27/32 ,  H01L27/12

CPC分类号： H01L27/1288 ,  H01L21/77 ,  H01L23/535 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L51/525 ,  H01L51/56 ,  H01L2021/775 ,  H01L2227/323

摘要： The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing a TFT substrate uses a gray tone mask to apply a single photolithographic process to simultaneously manufacture a gate insulation layer, a semiconductor layer, and a etch stop so as to reduce the number of the photolithographic processes used from ten processes to eight processes and reduce the number of masks used thereby simplifying the manufacturing process and effectively increasing the manufacturing efficiency and the yield rate. The TFT substrate structure of the present invention includes a gate insulation layer, a semiconductor layer, and an etch stop layer that are manufactured at the same time with a photolithographic process by using a gray tone mask so that the structure is simple, the manufacturing is easy, and the manufacturing efficiency and yield rate are effectively increased.

公开(公告)号：US20170033202A1

公开(公告)日：2017-02-02

申请号：US15169356

申请日：2016-05-31

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

IPC分类号： H01L29/66 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L29/786 ,  H01L29/51

CPC分类号： H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm−3 to approximately 5×1019 cm−3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.

摘要翻译： 制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。 通过溅射将载流子传输结构沉积在栅极介电层上。 载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。 非晶金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。 源极/漏极触点位于保护层上并与其电接触。

公开(公告)号：US20160329363A1

公开(公告)日：2016-11-10

申请号：US14905385

申请日：2015-07-16

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

发明人： Zongze He ,  Jianming Wang ,  Zhiming Meng ,  Weihao Hu

IPC分类号： H01L27/13 ,  H01L27/12

CPC分类号： H01L27/13 ,  G02F1/136286 ,  G02F2001/133388 ,  H01L21/77 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/124 ,  H01L27/1262 ,  H01L2021/775

摘要： An array substrate and a manufacturing method thereof, comprising a base substrate, and a gate, a gate insulating layer, an active layer and a source/drain arranged on the base substrate, the array substrate further comprising an antenna for receiving and/or transmitting wireless signals, the antenna being arranged on the base substrate. By arranging the antenna on the base substrate of the array substrate, the antenna is integrated directly in the display panel. Thus, not only the area of the PCB circuit board in the display device can be reduced, but also the spare area in the array substrate can be utilized sufficiently, thereby improving the integration level of the display device and reducing the total volume of the display device.

摘要翻译： 一种阵列基板及其制造方法，其特征在于，具备基板，栅极，栅极绝缘层，有源层和配置在基板上的源极/漏极，该阵列基板还包括用于接收和/或发送的天线 无线信号，天线布置在基底基板上。 通过将天线布置在阵列基板的基底基板上，天线直接集成在显示面板中。 因此，不仅可以减少显示装置中的PCB电路板的面积，而且可以充分利用阵列基板中的备用区域，从而提高显示装置的集成度，降低显示器的总体积 设备。

公开(公告)号：US09269726B2

公开(公告)日：2016-02-23

申请号：US14158133

申请日：2014-01-17

申请人： Samsung Display Co., Ltd.

发明人： Jeong Min Park ,  Sung Kyun Park ,  Jung-Soo Lee ,  Ji-Hyun Kim ,  Jun Chun

IPC分类号： H01L27/15 ,  H01L29/20 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： H01L27/1248 ,  G02F1/134363 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78606 ,  H01L2021/775

摘要： A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member.

摘要翻译： 公开了薄膜晶体管（TFT）阵列面板及其制造方法。 可以形成接触孔以暴露设置在TFT阵列面板的基板上的焊盘。 连接构件的第一层形成有与第一场产生电极相同的层，并且设置在接触孔中。 第二钝化层设置在TFT阵列面板中，但是在形成接触孔的区域处被去除并且覆盖连接构件的第一层的第二钝化层的部分。 连接构件的第二层形成在连接构件的第一层上。

公开(公告)号：US20150303123A1

公开(公告)日：2015-10-22

申请号：US14689274

申请日：2015-04-17

申请人： LG Display Co., Ltd.

发明人： SunHyun Choi ,  KiTaeg Shin ,  ChelHee Jo ,  TaeYun Roh

IPC分类号： H01L23/31 ,  H01L29/423 ,  H01L21/283 ,  H01L23/29 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L21/311 ,  H01L27/12 ,  H01L21/3213

CPC分类号： H01L21/84 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/13458 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32133 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L2021/775 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an array substrate for a display device and a manufacturing method thereof. A transparent electrode pattern (ITO) may be formed between a source/drain metal pattern and a passivation layer located above the source/drain metal pattern, which are formed in a passivation hole area of a non-active area of the array substrate. Accordingly, it may be possible to prevent display failure caused by a delamination phenomenon or peel-off of a material of the passivation layer due to the lack of adhesion strength between a metal layer and the passivation layer in the passivation hole area.

摘要翻译： 本公开内容提供了一种用于显示装置的阵列基板及其制造方法。 可以在源极/漏极金属图案和位于源/漏极金属图案上方的钝化层之间形成透明电极图案（ITO），其形成在阵列基板的非有源区域的钝化孔区域中。 因此，由于钝化孔区域中的金属层与钝化层之间的粘合强度不足，可以防止由于钝化层的材料的分层现象或剥离而引起的显示故障。

公开(公告)号：US20140306288A1

公开(公告)日：2014-10-16

申请号：US14246407

申请日：2014-04-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hiroki ADACHI ,  Kayo KUMAKURA

IPC分类号： H01L29/786 ,  H01L21/84

CPC分类号： H01L29/78603 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/78606 ,  H01L2021/775

摘要： Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

摘要翻译： 提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。 一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。 当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。

公开(公告)号：US20240112911A1

公开(公告)日：2024-04-04

申请号：US18199578

申请日：2023-05-19

申请人： Samsung Display Co., LTD.

发明人： Heegwan RYU ,  Jaesung GU ,  Deokjae KIM ,  Dongchan SEO ,  Younghoon OH ,  Yujin OH ,  Eunji LIM

IPC分类号： H01L21/02 ,  B23K26/0622 ,  H01L21/67

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  H01L21/67115 ,  H01L21/67253 ,  H01L2021/775

摘要： A laser crystallization apparatus includes: a plurality of laser generators which generates an incident laser beam; an optical system which optically converts the incident laser beam to an output laser beam; a process chamber in which a thin film formed on a substrate is crystallized by the output laser beam radiated thereto; a first monitoring device which detects a synthesized pulse of the output laser beam; a second monitoring device which detects individual pulses of the incident laser beam; and a controller which controls oscillation times of the plurality of laser generators. The controller generates a plurality of synthesized pulses by combining the individual pulses of the incident laser beam, and derives an optimal synthesized pulse from the plurality of synthesized pulses.

公开(公告)号：US20180197897A1

公开(公告)日：2018-07-12

申请号：US15127771

申请日：2015-08-03

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Yanxia XIN ,  Yuqing YANG ,  Xiaofei YANG

IPC分类号： H01L27/12 ,  H01L21/77 ,  H01L21/28

CPC分类号： H01L27/1255 ,  H01L21/28 ,  H01L21/77 ,  H01L27/124 ,  H01L2021/775

摘要： An array substrate and a method for fabricating the same, and a display device are disclosed. The array substrate comprises: a thin film transistor comprising an active region, a source/drain and a gate; a shading part arranged below the active region and made from an electrically conductive material; and a storage capacitor comprising a first plate and a second plate which are spaced apart and arranged oppositely. The first plate is arranged in a same layer as the shading part, and the second plate is arranged in a same layer as any one of the active region, the source/drain and the gate.

公开(公告)号：US20180197896A1

公开(公告)日：2018-07-12

申请号：US15563587

申请日：2017-05-04

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Keke GU ,  Ni YANG ,  Wei HU ,  Shaoru LI ,  Xin LIU ,  Zhijian QI ,  Yusong HOU

IPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/77

CPC分类号： H01L27/1251 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/77 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/41733 ,  H01L2021/775

摘要： A TFT array substrate, its manufacturing method and a corresponding display device are disclosed. The TFT array substrate, includes a bearing substrate, a gate line and a data line arranged across each other on the bearing substrate, a pixel region defined by the gate line and the data line, and a thin film transistor, a pixel electrode and an active layer disposed in the pixel region. Specifically, a gate of the thin film transistor is connected to the gate line, a source thereof is connected to the data line and a drain thereof is connected to the pixel electrode. Further, an insulating layer is also formed above the source of the thin film transistor, and a drain trench is formed in the insulating layer. In addition, the drain of the thin film transistor is in the drain trench and is connected to the source through the active layer.

公开(公告)号：US20180197779A1

公开(公告)日：2018-07-12

申请号：US15912091

申请日：2018-03-05

申请人： LG Display Co., Ltd.

发明人： Young-Jang LEE ,  Ho-Young JEONG

IPC分类号： H01L21/82 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L21/28 ,  H01L21/77

CPC分类号： H01L21/82 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/32 ,  H01L27/3241 ,  H01L27/3244 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/7869 ,  H01L2021/775 ,  H01L2227/323

摘要： An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.