摘要:
It is provided a device oscillating an electromagnetic wave having a target frequency of 0.1 THz to 30 THz. The device includes a main body made of a non-linear optical crystal and a sub-wavelength grating structure formed on the main body. The sub-wavelength grating structure includes protrusions arranged in first direction “X” and second direction “Y” on the main body, first grooves 3X each provided between the adjacent protrusions and extending in the first direction, and second grooves 3Y each provided between the adjacent protrusions and extending in the second direction. Each of the protrusions includes a pair of first faces opposing in the first direction “X” with each other and a pair of second faces opposing in the second direction “Y” with each other. The width of the first face is made smaller from the main body 7 toward an upper end 2c of the protrusion 2.
摘要:
Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear susceptibility (χ(2)) integrated in an active region of the QCL. The QCL is configured to generate first radiation at a first frequency ω1, second radiation at a second frequency ω2, and third radiation at a third frequency ω3=ω1−ω2 based on difference frequency generation (DFG) arising from the non-linear susceptibility. In one aspect, the QCL may be configured to generate appreciable THz radiation at room temperature.
摘要:
A light emitting device comprises a waveguide having an electrically pumped gain region, a nonlinear medium, and an inclined mirror. Light pulses emitted from the gain region are reflected by the inclined mirror into the nonlinear medium in order to generate frequency-doubled light pulses. The gain region and the inclined mirror are implemented on the same substrate. The resulting structure is stable and compact, and allows on-wafer testing of produced emitters. The folded structure allows easy alignment of the nonlinear crystal.
摘要:
A nullFolded Cavity Surface Emitting Lasernull (FCSEL) sum frequency generating device capable of generating a second harmonic at room temperatures with high efficiency and output power, while having a small size, low energy consumption, and a low manufacturing cost. A FCSEL sum frequency generating semiconductor diode laser has a multilayered structure that comprises a mode discriminating polyhedral shaped prism waveguide, which is located at one end of two light emitting diodes, a partial photon reflecting mirror, which is located at the opposite end of the two light emitting diodes, and a phase-matching sum-frequency generating superlattice, which is located between the polyhedral shaped prism waveguide and the partial photon reflecting mirror.
摘要:
A new family of lasers and optical parametric oscillators is based on efficient frequency conversion or doubling in multimode compound optical waveguides. These waveguides exploit specific useful properties of their higher order modes while providing good compatibility with single-mode optical fibers. A mode engineering approach is applied to construct a compound waveguide structure that supports a higher order mode having a sharp peak in its field. This sharp peak simplifies selection of this mode by efficient coupling of its radiation into a single-mode fiber. The lasers and optical parametric oscillators employ wavelength selective properties of this mode field configuration and its unique ability to support efficient frequency conversion and doubling.
摘要:
The semiconductor heterostructure laser includes a semiconductor substrate, a multilayered light emitting region and an active nonlinear waveguide. The multilayered light emitting region serves as a light source for producing fundamental light of a fundamental frequency. The active nonlinear waveguide comprises a number of multilayered heterostructures which absorb the fundamental light and double the frequency of the fundamental light, resulting in a doubled frequency light. The multilayered heterostructure also has a resonator structure. For effective operation, a first refractive mirror is formed between the semiconductor substrate and the multilayered light emitting region, and a second refractive mirror is formed between the multilayered light emitting region and the active nonlinear waveguide.
摘要:
A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.
摘要:
A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
摘要:
A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ω by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.
摘要:
A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ω1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.