公开(公告)号：US20150075420A1

公开(公告)日：2015-03-19

申请号：US14488629

申请日：2014-09-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hitoshi NOGUCHI ,  Daisuke TAKEUCHI ,  Satoshi YAMASAKI ,  Masahiko OGURA ,  Hiromitsu KATO ,  Toshiharu MAKINO ,  Hideyo OKUSHI

IPC: C30B25/16 ,  C30B29/04 ,  C30B25/18

CPC classification number: C30B25/16 ,  C30B25/105 ,  C30B25/12 ,  C30B25/18 ,  C30B25/183 ,  C30B25/186 ,  C30B29/04

Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Abstract translation: 一种制造单晶金刚石的方法，其中气相合成单晶金刚石另外沉积在通过气相合成获得的单晶金刚石种子基底上，包括测量种子基底的平整度的步骤，确定是否 基于平坦度的测量结果来平坦化种子基底，以及根据确定平坦化需要平坦化的种子基底之后的另外沉积气相合成单晶金刚石的步骤的以下两个步骤中的任何一个步骤 以及基于所述测定，另外沉积气相合成单晶金刚石而不使其不需要扁平化的种子基底平坦化的步骤。

公开(公告)号：US20150074824A1

公开(公告)日：2015-03-12

申请号：US14199226

申请日：2014-03-06

Applicant: REXEON TECHNOLOGY CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenji TODA ,  Kenji SAYANO

IPC: G06F21/62

CPC classification number: G06F21/78

Abstract: A secure data storage apparatus capable of independently holding security information within a hardware device of the storage apparatus, and of implementing write prohibition and read prohibition of data is provided. As means for specifying security such as write prohibition/write inquiry/read prohibition/read inquiry for data of a given size or a given number of pieces of data, a storage component for holding security information is prepared in addition to a storage component for holding data. For each unit of storage of the storage component for holding data, corresponding security data is held in the storage component for holding security information. In this way, in response to occurrence of a request to access data, security information corresponding to a storage area for holding the data is referred to, and an operation is performed in accordance with the security information.

Abstract translation: 提供一种能够独立地保持存储装置的硬件装置内的安全信息以及实现写入禁止和读取禁止数据的安全数据存储装置。 作为用于指定对于给定大小或给定数量的数据的数据的写入禁止/写入查询/读取禁止/读取查询的安全性的手段，除了用于保存的存储组件之外，还准备用于保存安全信息的存储组件 数据。 对于用于保存数据的存储组件的每个存储单元，相应的安全数据被保存在用于保存安全信息的存储组件中。 以这种方式，响应于发生访问数据的请求，参考对应于用于保存数据的存储区域的安全信息，并且根据安全信息执行操作。

公开(公告)号：US20150069415A1

公开(公告)日：2015-03-12

申请号：US14397106

申请日：2013-03-18

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinsuke Harada ,  Noriyuki Iwamuro ,  Yasuyuki Hoshi ,  Yuichi Harada

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/36

CPC classification number: H01L29/1608 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/36 ,  H01L29/78 ,  H01L29/7802

Abstract: An n-type SiC layer is formed on a front face of an n+-type SiC substrate and plural p-type regions are selectively formed inside the n-type SiC layer. A p-type SiC layer is formed covering the surfaces of the n-type SiC layer and the p-type regions. An n-type region is formed inside the p-type SiC layer to be connected to the n-type SiC layer. An n+-type source region and a p+-type contact region are formed inside the p-type SiC layer, positioned away from the n-type region and in contact with each other. The n-type region in the p-type SiC layer is formed such that the width LJFET of the n-type region is within a range from 0.8 μm to 3.0 μm and the impurity concentration of the n-type region is greater than 1.0×1016 cm−3 and less than or equal to 5.0×1016 cm−3.

Abstract translation: 在n +型SiC衬底的正面上形成n型SiC层，并且在n型SiC层内选择性地形成多个p型区域。 形成覆盖n型SiC层和p型区域的表面的p型SiC层。 n型区域形成在与n型SiC层连接的p型SiC层内部。 在p型SiC层内形成n +型源区和p +型接触区，远离n型区并相互接触。 形成p型SiC层的n型区域，使得n型区域的宽度LJFET在0.8μm〜3.0μm的范围内，n型区域的杂质浓度大于1.0× 1016cm-3且小于或等于5.0×1016cm-3。

公开(公告)号：US08951638B2

公开(公告)日：2015-02-10

申请号：US13894533

申请日：2013-05-15

Applicant: National Institute of Advanced Industrial Science and Technology ,  Denki Kagaku Kogyo Kabushiki Kaisha

Inventor： Tomohisa Katou ,  Yusuke Takeda ,  Hiroshi Murata

IPC: B32B5/16

CPC classification number: C01B31/36 ,  C01B32/956 ,  C30B23/02 ,  C30B29/36 ,  C30B35/007 ,  Y10T428/2982

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 μm or more and 700 μm or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 μm or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract translation: 用于制造碳化硅单晶的碳化硅粉末的平均粒径为100μm以上且700μm以下，比表面积为0.05m 2 / g以上且0.30m 2 / g以下。 一种制造碳化硅单晶的碳化硅粉末的制造方法，其特征在于，在1900℃以上的温度下，在70MPa以下的压力下烧结平均粒径为20μm以下的碳化硅粉末 2400℃以下，在非氧化性气氛中，得到密度为1.29g / cm 3以上的烧结体; 通过烧结体的粉碎调整粒径; 并通过酸处理除去杂质。

公开(公告)号：US20150036964A1

公开(公告)日：2015-02-05

申请号：US14382742

申请日：2013-02-27

Applicant: National Institute of Advanced Industrial Science and Technology ,  NEC Corporation ,  Fujitsu Limited

Inventor： Makoto Okano ,  Masahiko Mori ,  Masashige Ishizaka ,  Takanori Shimizu ,  Nobuaki Hatori

IPC: G02F1/225 ,  G02B6/42 ,  G02B6/125

CPC classification number: G02B6/125 ,  G02B6/2813 ,  G02B6/4296 ,  G02B2006/12142 ,  G02B2006/12159 ,  G02F1/0147 ,  G02F1/225 ,  G02F1/3138 ,  G02F2001/217

Abstract: A light source circuit transmits light incident from a semiconductor laser source to a plurality of optical devices. At least one optical branch section is formed to branch one input-side optical waveguide at least into a first output-side optical waveguide terminal and a second output-side optical waveguide terminal. A light path length (L1) between the optical branch section and a next-stage optical branch section or the optical device is connected to the first output-side optical waveguide extending from the optical branch section and a light path length (L2) between the optical branch section and the next-stage optical branch section selected such that the absolute value of a difference between (L1) and (L2) is (¼+i/2) times (i is zero or a positive integer) the wavelength of the light transmitted through the light source circuit.

Abstract translation: 光源电路将从半导体激光源入射的光透射到多个光学器件。 形成至少一个光分支部，至少将一个输入侧光波导分支到第一输出侧光波导端子和第二输出侧光波导端子。 光分支部分和下一级光分支部分或光学装置之间的光路长度（L1）连接到从光分支部分延伸的第一输出侧光波导和在光分支部分之间的光路长度（L2） 选择光分支部和下级光分支部，使得（L1）和（L2）之间的差的绝对值为（¼+ i / 2）倍（i为零或正整数） 光通过光源电路传输。

公开(公告)号：US20150014669A1

公开(公告)日：2015-01-15

申请号：US14371844

申请日：2013-01-10

Applicant: Sumitomo Chemical Company, Limited ,  National Institute of Advanced Industrial Science and Technology

Inventor： Nobuhiko Akino ,  Taichi Abe ,  Hideo Konno ,  Shigeru Shimada ,  Kazuhiko Sato

IPC: H01L51/00

CPC classification number: H01L51/0085 ,  C07F15/0033 ,  C08K5/0091 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1059 ,  C09K2211/185 ,  H01L51/5012 ,  H01L51/5016 ,  H05B33/10

Abstract: A metal complex exhibits blue light emission of high color purity and has a color purity of small temperature dependence, particularly in the blue region. Specifically, the metal complex is represented by Formula (1a): wherein M is a metal atom; R0 is a divalent linking group; each j independently represents 0 or 1; RP1, RP2, RP3, RP4 and RP6 each independently represents a hydrogen atom or the like; RP5 represents a halogen atom or the like; m is an integer of from 1 to 3, n is an integer of from 0 to 2, and m+n is 2 or 3; and the portion represented by Formula (2): represents a bidentate ligand; wherein Rx and Ry are an atom bonding to the metal atom M, and each independently represents a carbon atom, an oxygen atom or a nitrogen atom.

Abstract translation: 金属络合物显示出高色纯度的蓝色发光，具有温度依赖性低的色纯度，特别是在蓝色区域。 具体地，金属络合物由式（1a）表示：其中M是金属原子; R 0是二价连接基团; 每个j独立地表示0或1; RP1，RP2，RP3，RP4和RP6各自独立地表示氢原子等; RP5表示卤素原子等; m为1〜3的整数，n为0〜2的整数，m + n为2或3。 和由式（2）表示的部分：表示二齿配体; 其中Rx和Ry是与金属原子M键合的原子，并且各自独立地表示碳原子，氧原子或氮原子。

公开(公告)号：US08934290B2

公开(公告)日：2015-01-13

申请号：US14032815

申请日：2013-09-20

Applicant: Canon Anelva Corporation ,  National Institute of Advanced Industrial Science and Technology

Inventor： David D. Djayaprawira ,  Koji Tsunekawa ,  Motonobu Nagai ,  Hiroki Maehara ,  Shinji Yamagata ,  Naoki Watanabe ,  Shinji Yuasa

IPC: G11C11/00 ,  H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/08 ,  C23C14/34 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01F41/18

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract translation: 一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层 定向纹理结构。

公开(公告)号：US20140354323A1

公开(公告)日：2014-12-04

申请号：US14141344

申请日：2013-12-26

Applicant: KYOSHIN ELECTRIC CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Yoshihiro Hishikawa ,  Haruya Shimura ,  Kohei Kamatani ,  Hajime Kondo ,  Akio Shimono

IPC: G01R31/26 ,  G01R31/40

CPC classification number: G01R31/26 ,  H02S50/00 ,  H02S50/15

Abstract: To provide an I-V characteristic measuring apparatus that can, even though a solar simulator of a flash light type is used, accurately measure a true I-V characteristic of a solar cell that exhibits a different I-V characteristic depending on a sweep direction when a sweep time of applied voltage is short, an internal division ratio calculation part that, at each voltage value, calculates an internal division ratio at which a current value of a dark state stationary I-V characteristic internally divides a gap between a current value of a dark state forward I-V characteristic and a current value of a dark state reverse I-V characteristic; and a light state stationary I-V characteristic estimation and calculation part that, on the basis of the internal division ratio, a light state forward I-V characteristic, and a light state reverse I-V characteristic, estimates and calculates a light state stationary I-V characteristic are provided.

Abstract translation: 为了提供即使使用闪光型太阳能模拟器的IV特征测量装置，当施加的扫描时间时，也可以根据扫描方向精确地测量出具有不同IV特性的太阳能电池的真实IV特性 电压短，内分频比计算部，在各电压值下，计算暗态静态IV特性的电流值的内分频，将内部黑暗状态正向IV特性的电流值与 黑暗状态反向IV特性的当前值; 以及基于内部分频比的光状态正向I-V特性和光状态反向I-V特性的光状态固定I-V特性估计和计算部分，提供光状态静态I-V特性。

公开(公告)号：US20140346352A1

公开(公告)日：2014-11-27

申请号：US14364530

申请日：2012-12-26

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Toshihiko Ogura

IPC: H01J37/20 ,  H01J37/28

CPC classification number: H01J37/20 ,  G21K5/08 ,  H01J37/28 ,  H01J2237/2003 ,  H01J2237/2004 ,  H01J2237/2813

Abstract: When injection of electrons into a sample supporting member causes a potential gradient between an insulative thin film and a conductive thin film at a site of electron beam injection, the potential barrier of the surface of the insulative thin film becomes thin, and an electron emission phenomenon is caused by tunnel effects. Secondary electrons caused in the insulative thin film tunnel to the conductive thin film along the potential gradient. The secondary electrons, having tunneled, reach a sample while diffusing in the conductive thin film. In the case where the sample is a sample with a high electron transmittance, such as a biological sample, the secondary electrons also tunnel through the interior of the sample. The secondary electrons are detected to acquire an SEM image in which the inner structure of the sample is reflected.

Abstract translation: 当电子注入样品支撑构件时，在电子束注入位置处导致绝缘薄膜和导电薄膜之间的电势梯度，绝缘薄膜表面的势垒变薄，并且电子发射现象 是由隧道效应造成的。 二次电子在绝缘薄膜隧道中引发导电薄膜沿着电位梯度。 已经隧穿的二次电子在导电薄膜中扩散时到达样品。 在样品是具有高电子透射率的样品（例如生物样品）的情况下，二次电子也穿过样品的内部。 检测二次电子以获得样品的内部结构被反射的SEM图像。

公开(公告)号：US20140332718A1

公开(公告)日：2014-11-13

申请号：US14362800

申请日：2012-10-12

Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Akira Kojima ,  Toshikatsu Kojima ,  Mitsuharu Tabuchi ,  Tetsuo Sakai ,  Takuhiro Miyuki ,  Junichi Niwa ,  Kazuhito Kawasumi ,  Masakazu Murase

IPC: H01M4/36 ,  C01B33/32 ,  H01M4/58

CPC classification number: H01B1/08 ,  C01B33/32 ,  H01M4/1315 ,  H01M4/13915 ,  H01M4/364 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

Abstract: A lithium silicate-based compound according to the present invention is expressed by a general formula, Li(2−a+b)AaMn(1−x−y)CoxMySiO(4+α)Clβ (In the formula: “A” is at least one element selected from the group consisting of Na, K, Rb and Cs; “M” is at least one member selected from the group consisting of Mg, Ca, Al, Ni, Fe, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W; and the respective subscripts appear to be as follows: 0≦“a”

Abstract translation: 本发明的硅酸锂类化合物由通式Li（2-a + b）AaMn（1-x-y）CoxMySiO（4 +α）Cl＆bgr; （式中，“A”为选自Na，K，Rb，Cs中的至少一种元素，“M”为选自Mg，Ca，Al，Ni，Fe ，Nb，Ti，Cr，Cu，Zn，Zr，V，Mo和W;各个下标看起来如下：0＆nlE;“a”<0.2; 0＆nlE;“b”<1; 0 <“x” <1; 0＆nlE;“y”＆nlE; 0.5; -0.25＆nlE;“α”＆nlE; 1.25;和0＆nlE;“＆bgr”“＆nlE; 0.05）。 使用硅酸锂系化合物作为放电平均电压较高的能够吸附和解吸锂离子的二次电池用正极活性物质。