公开(公告)号：US20180335526A1

公开(公告)日：2018-11-22

申请号：US15981321

申请日：2018-05-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National De La Recherche Scientifique ,  UNIVERSITE D'AIX MARSEILLE ,  UNIVERSITE DE TOULON

Inventor： Martin COCHET ,  Dimitri SOUSSAN ,  Fady ABOUZEID ,  Gilles GASIOT ,  Philippe ROCHE

IPC: G01T1/02 ,  H03K3/03

CPC classification number: G01T1/026

Abstract: Absorbed ionizing particles differentially effect first and second acquiring circuit stages configured to respectively generate first and second acquisition signals. Each acquisition signal has a characteristic that is variable as a function of an amount of absorbed ionizing particles. A measuring circuit generates, on the basis of the first and second acquisition signals, a relative parameter indicative of a relationship between the variable characteristics. A computation of a total ionizing dose is made using a 1st- or 2nd-degree polynomial relationship in the relative parameter.

公开(公告)号：US20180329144A1

公开(公告)日：2018-11-15

申请号：US15971665

申请日：2018-05-04

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Patrick Le Maitre ,  Jean-Francois Carpentier

IPC: G02B6/28

CPC classification number: G02B6/2821 ,  G02B6/12004 ,  G02B6/125 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12159

Abstract: The disclosure relates to an optical splitter including two waveguides on either side of an axis. Each waveguide includes a first segment and a second segment that are closer to the axis than the rest of the waveguide. The first segments are optically coupled and the second segments are optically coupled. Each guide includes between the first and second segment, starting from the first segment, a first curved section including in succession a curvature the concavity of which is turned the side opposite the axis then a curvature the concavity of which is turned towards the axis, and starting from the second segment a second curved section including in succession a curvature the concavity of which is turned the side opposite the axis then a curvature the concavity of which is turned towards the axis. The first curved sections of the two waveguides are curved differently.

公开(公告)号：US20180329140A1

公开(公告)日：2018-11-15

申请号：US16029365

申请日：2018-07-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frédéric Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  H01L25/04 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H02S40/44

CPC classification number: G02B6/12004 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L24/14 ,  H01L25/043 ,  H01L2924/00014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H02S40/44 ,  H01L2224/13099

Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

公开(公告)号：US20180321308A1

公开(公告)日：2018-11-08

申请号：US16031395

申请日：2018-07-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Clerc ,  Gilles Gasiot

IPC: G01R31/3177 ,  G01R31/317

CPC classification number: G01R31/3177 ,  G01R31/31703 ,  G01R31/31723 ,  G01R31/31727 ,  G01R31/318392 ,  G01R31/318566

Abstract: A chain of flip-flops is tested by passing a reference signal through the chain. The reference signal is generated from a test pattern that is cyclically fed back at the cadence of a clock signal. The reference signal propagates through the chain of flip-flops at the cadence of the clock signal to output a test signal. A comparison is carried out at the cadence of the clock signal of the test signal and the reference signal, where the reference signal is delayed by a delay time taking into account the number of flip-flops in the chain and the length of the test pattern. An output signal is produced, at the cadence of the clock signal, as a result of the comparison.

公开(公告)号：US20180278863A1

公开(公告)日：2018-09-27

申请号：US15995249

申请日：2018-06-01

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H04N5/353 ,  H04N5/378 ,  H04N5/372 ,  H01L27/146 ,  H04N5/363

CPC classification number: H04N5/353 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/363 ,  H04N5/372 ,  H04N5/378

Abstract: Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode. A read area is formed in an intermediate area which is formed in the memory area. The memory area, the intermediate area and read area define a second transistor having an insulated horizontal electrode forming a gate of the second transistor. The memory area may be formed by a first and second memory areas and an output signal is generated indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer to the first memory area.

公开(公告)号：US20180270439A1

公开(公告)日：2018-09-20

申请号：US15985998

申请日：2018-05-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Francois Roy

IPC: H04N5/374 ,  H04N5/378 ,  H04N5/353 ,  H01L27/146

CPC classification number: H04N5/3742 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/353 ,  H04N5/378

Abstract: A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

公开(公告)号：US10074649B2

公开(公告)日：2018-09-11

申请号：US15251009

申请日：2016-08-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Gaspard Hiblot

IPC: H01L27/07 ,  G01N27/414 ,  H01L27/06 ,  H01L29/423 ,  G01R19/165 ,  G01N33/49

CPC classification number: H01L27/0722 ,  G01N27/414 ,  G01N27/4145 ,  G01N33/49 ,  G01R19/16519 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/1207 ,  H01L29/42356

Abstract: An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a collector electrically connected to the gate of the MOS transistor. The detector has a first configuration in which the bipolar transistor is conducting and the MOS transistor is turned off. The detector has a second configuration in which the bipolar transistor is turned off and the MOS transistor is in a sub-threshold operation. Transition of the detector from the first configuration to the second configuration occurs in response to the variation in potential.

公开(公告)号：US20180192027A1

公开(公告)日：2018-07-05

申请号：US15681135

申请日：2017-08-18

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexandre AYRES ,  Bertrand BOROT

IPC: H04N13/00 ,  G11C5/04 ,  G11C29/44 ,  B42D25/42 ,  B42D25/305

CPC classification number: H04N13/178 ,  B42D25/305 ,  B42D25/42 ,  G11C5/04 ,  G11C29/44 ,  H01L23/544 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2223/54413 ,  H01L2223/5442 ,  H01L2223/5444 ,  H01L2223/54473

Abstract: A semiconductor chip includes a plurality of superposed semiconductor levels. The semiconductor levels include a plurality of elementary circuits coupled to a common input node. Sensing circuits are coupled to elementary elements of different levels. The outputs of the sensing circuits are used to generate a number, which serves as an identification number of the semiconductor chip.

公开(公告)号：US20180158860A1

公开(公告)日：2018-06-07

申请号：US15366958

申请日：2016-12-01

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy

IPC: H01L27/146 ,  H01L23/532 ,  H01L29/49

CPC classification number: H01L27/14636 ,  H01L23/53271 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/14689

Abstract: An image sensor includes a first semiconductor substrate supporting a photodiode and a source region of a transfer transistor. A first interconnect level on the first semiconductor substrate includes an interconnection dielectric layer on the first semiconductor substrate and interconnect line layers over the interconnection dielectric layer. A second semiconductor substrate that supports readout transistors is mounted over the first semiconductor substrate and first interconnect level. The first interconnect level further includes a first doped semiconductor material electrical connection in physical and electrical contact with the source region in the first semiconductor substrate that passes through the interconnection dielectric layer and the interconnect line layers to electrically connect to at least one transistor of the readout transistors.

公开(公告)号：US09985119B2

公开(公告)日：2018-05-29

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.