公开(公告)号：US5791961A

公开(公告)日：1998-08-11

申请号：US668985

申请日：1996-06-21

Applicant: Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

Inventor： Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

IPC: H01J3/02 ,  H01J1/30 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cold cathode field emission device is described. A key feature of its design is that groups of microtips share a single conductive disk with a reliable ballast resistor being interposed between each of these conductive disks and the cathode conductor. Additionally, a resistor, rather than a conductor, is used to connect the gate conductive disk to the gate electrode. The latter is arranged so as not to overlap with the cathode electrode. The cathode and gate conductive disks ensure that the ballast resistance asociated with each microtip is essentially the same.

Abstract translation: 描述冷阴极场致发射器件。 其设计的一个关键特征是，一组微尖头共享一个导电盘，在这些导电盘和阴极导体之间​​插入可靠的镇流电阻。 此外，使用电阻器而不是导体将栅极导电盘连接到栅电极。 后者被布置成不与阴极重叠。 阴极和栅极导电盘确保与每个微尖端相关的镇流电阻基本相同。

公开(公告)号：US5789851A

公开(公告)日：1998-08-04

申请号：US573257

申请日：1995-12-15

Applicant: Emmanuel Turlot ,  Jacques Schmitt ,  Thierry Emeraud

Inventor： Emmanuel Turlot ,  Jacques Schmitt ,  Thierry Emeraud

IPC: H01J1/304 ,  H01L21/02 ,  H01T1/30

CPC classification number: H01L28/20 ,  H01J1/304 ,  H01J2201/319

Abstract: A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

Abstract translation: 场发射器件具有其表面涂覆有形成电极的导电层的基底衬底。 形成为微尖端的场致发射体电连接到电极。 在微尖端和电极之间，布置限流电阻硅膜，并且通过n或p-掺杂剂将硅膜的电阻率调节到范围从约102至约105欧姆·厘米。 硅膜含有一种合金元素，如果以化学计量的量使用，则能够形成硅陶瓷，但不能掺杂硅。

公开(公告)号：US5783905A

公开(公告)日：1998-07-21

申请号：US774853

申请日：1996-12-27

Applicant: Johann Greschner ,  Peter Pleshko ,  Gerhard Schmid

Inventor： Johann Greschner ,  Peter Pleshko ,  Gerhard Schmid

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319

Abstract: The invention generally relates to the technical field of devices using the effect to emit electrons out of a solid into vacuum due to high electric field strength. Such devices are usually called field emission devices. The invention relates more specifically to the structure of a field emission device, to the method of fabricating a field emission device, and to the use of a multitude of field emission devices in the technical field of flat panel displays. The inventive structure of a field emission device (15) comprises an individual series resistor for each electron emitting tip (1), wherein the series resistor is formed by the tip (1) itself. The tip (1) comprises a body (9) of a first material with high resistivity and an at least partial coating (7) of a second material with low work function, wherein the body (9) of the first material forms the series resistor and the coating (7) of the second material provides for electron emission. The method for fabricating a field emission device (15) uses depositing and sacrificial layer etch back techniques to provide easy and precise control of tip height and shape and also easy and precise control of the tip-to-gate distance and geometry.

Abstract translation: 本发明一般涉及由于高电场强度而使用这种效应将电子从固体发射到真空中的装置的技术领域。 这种装置通常称为场致发射装置。 本发明更具体地涉及场发射装置的结构，制造场致发射装置的方法以及在平板显示器的技术领域中使用多种场致发射装置。 场发射器件（15）的本发明结构包括用于每个电子发射尖端（1）的单独的串联电阻器，其中串联电阻器由尖端（1）本身形成。 尖端（1）包括具有高电阻率的第一材料的主体（9）和具有低功函数的第二材料的至少部分涂层（7），其中第一材料的主体（9）形成串联电阻器 并且第二材料的涂层（7）提供电子发射。 用于制造场发射器件（15）的方法使用沉积和牺牲层回蚀技术来提供尖端高度和形状的容易和精确的控制，并且还容易且精确地控制尖端到栅极的距离和几何形状。

公开(公告)号：US5763997A

公开(公告)日：1998-06-09

申请号：US456453

申请日：1995-06-01

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/00 ,  H01J2329/8625

Abstract: A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode.

Abstract translation: 矩阵寻址平板显示器包括平面阴极，当通过放置在平面阴极的每一侧上的两个电极跨越平面阴极的表面产生电场时，可以将电子发射到阳极。 扁平阴极可以由金属陶瓷或非晶金刚石或导电材料和绝缘材料的一些其它组合构成，例如低有效功函数材料。 所产生的电场导致电子在导电绝缘界面处在阴极的表面上跳跃。 在阳极和阴极之间产生的电场使得这些电子轰击阳极上的磷光体层。

公开(公告)号：US5734223A

公开(公告)日：1998-03-31

申请号：US564811

申请日：1995-11-29

Applicant: Hideo Makishima ,  Yoshiaki Yanai

Inventor： Hideo Makishima ,  Yoshiaki Yanai

IPC: H01J29/04 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: In a field emission cold cathode composed of a plurality of micro cold cathodes, the diameter of a plurality of openings formed in a gate electrode is large at a central region of an electron emission zone but small at a peripheral region of the electron emission zone, or the thickness of the gate electrode is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone. Alternatively, the thickness of an insulator layer is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone. Or, a resistance layer is provided between a substrate and a plurality of electron emission electrodes, and resistivity of the resistance layer is small at the central region of the electron emission zone but large at the peripheral region of the electron emission zone.

Abstract translation: 在由多个微冷阴极构成的场致发射冷阴极中，形成在栅电极中的多个开口的直径在电子发射区的中心区域处较大，但在电子发射区的外围区域较小， 或者栅电极的厚度在电子发射区的中心区域较小，但在电子发射区的外围区域较大。 或者，绝缘体层的厚度在电子发射区的中心区域较小，但在电子发射区的外围区域较大。 或者，在基板和多个电子发射电极之间设置电阻层，电子发射区的中心区域的电阻率较小，但在电子发射区的外围区域较大。

公开(公告)号：US5666020A

公开(公告)日：1997-09-09

申请号：US558520

申请日：1995-11-16

Applicant: Hisashi Takemura

Inventor： Hisashi Takemura

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J1/46 ,  H01J1/02 ,  H01J1/16 ,  H01J19/40 ,  H01J21/10

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: The present invention provides an emitter structure of a field emission electron gun. The emitter structure comprises an emitter being electrically conductive and being pointed at the top, wherein the top of the emitter has the highest resistance of every other part, so that the top of the emitter has the highest heat energy of every other part when the emitter emits electrons.

Abstract translation: 本发明提供场致发射电子枪的发射极结构。 发射极结构包括导电并且指向顶部的发射极，其中发射极的顶部具有每隔一个部分的最高电阻，使得发射极的顶部在发射极的每个其他部分具有最高的热能 发射电子。

公开(公告)号：US5663608A

公开(公告)日：1997-09-02

申请号：US633545

申请日：1996-04-17

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/02

CPC classification number: G09G3/001 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  H01J1/3042 ,  H01J29/028 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

Abstract translation: 一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。 还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道 电子发射增加有效量的掺杂物种类和薄膜三极管器件。

公开(公告)号：US5656883A

公开(公告)日：1997-08-12

申请号：US692591

申请日：1996-08-06

Applicant: Alton O. Christensen

Inventor： Alton O. Christensen

IPC: H01J1/304 ,  H01J1/02 ,  H01J1/14 ,  H01J1/16 ,  H01J19/06 ,  H01J19/10

CPC classification number: H01J1/304 ,  H01J2201/30446 ,  H01J2201/319

Abstract: This disclosure is directed toward field emission surfaces, and is more particularly directed toward improvements in cold, low field, high current, low noise field emission devices and surfaces. Such devices are used in field emission display devices such as video displays and information displays. The device utilizes a cermet with graded concentration of insulative and conductive particles deposited on the truncated point of a conical emitter. The emission surface of the cermet is insensitive to gases that oxidize or poison the emission surface. Such gases and other contaminants emanate from a phosphor when the emission device is used in phosphor display devices. The field emission device is operated at lower potentials thereby reducing power requirements and minimizing heat dissipation requirements. Further, the field emission device which operates at lower field in order to reduce mechanically and temporally unstable emission sites which result in current bursts and current deficits at these sites. Still further, the field emission device incorporates internal resistors which provide series resistance to limit noise at affected emission areas thereby eliminating the need to limit noise by incorporating high-valued resistors, typically in series with the cathode terminal of the emission device, which reduce the potential to the entire emission surface and increasing potentials required to produce current sufficient to excite display phosphor.

Abstract translation: 本公开涉及场发射表面，更具体地涉及在冷，低场，高电流，低噪声场发射器件和表面上的改进。 这种设备用于诸如视频显示器和信息显示器的场发射显示设备中。 该器件利用沉积在锥形发射极的截头点上的分级浓度的绝缘和导电颗粒的金属陶瓷。 金属陶瓷的发射表面对氧化或污染发射表面的气体不敏感。 当发光装置用于荧光体显示装置时，这种气体和其它污染物从磷光体发出。 场致发射器件以较低的电位运行，从而降低功率需求并最大限度地减少散热要求。 此外，场致发射器件在较低场操作，以减少在这些位置导致电流突发和电流缺陷的机械和时间上不稳定的发射位置。 此外，场致发射器件包含内部电阻器，其提供串联电阻以限制受影响的发射区域处的噪声，从而消除了通过并入通常与发射器件的阴极端子串联的高电阻电阻来限制噪声的需要，这降低了 对整个发射表面的电位和增加产生足以激发显示荧光体的电流所需的电位。

公开(公告)号：US5638086A

公开(公告)日：1997-06-10

申请号：US458853

申请日：1995-06-02

Applicant: John K. Lee ,  Glen Hush

Inventor： John K. Lee ,  Glen Hush

IPC: G09G3/00 ,  G09G3/20 ,  G09G3/22 ,  H01J31/12

CPC classification number: G09G3/006 ,  G09G3/22 ,  H01J31/127 ,  G09G2300/0809 ,  G09G2310/0248 ,  G09G3/2011 ,  G09G3/2014 ,  H01J2201/319

Abstract: A display is arranged in rows and columns with a current source for each column instead of a current source in each display cell. By omitting the current source from the cell, smaller display cell geometries are achieved. In a display where one row is selected at a time, the display of the present invention with smaller circuitry achieves performance identical to the prior art. Application is made to flat panel displays generally including field emission displays, liquid crystal displays, and integrated light emitting diode array displays.

Abstract translation: 显示器以行和列排列，每个列的当前源代替每个显示单元中的当前源。 通过从电池省略电流源，实现更小的显示单元几何形状。 在一次选择一行的显示器中，具有较小电路的本发明的显示实现与现有技术相同的性能。 通常应用于平板显示器，包括场致发射显示器，液晶显示器和集成发光二极管阵列显示器。

公开(公告)号：US5635791A

公开(公告)日：1997-06-03

申请号：US518829

申请日：1995-08-24

Applicant: Kenneth G. Vickers

Inventor： Kenneth G. Vickers

IPC: H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00

Abstract: An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (122) spaced by an insulating layer (25) from a cathode electrode including a conductive mesh (118). Circular arrays (112) of microtips (14) are located concentrically within circular mesh spacings (116) on a resistive layer (15), within apertures (26) formed in extraction electrode (122). Microtips (14) are laterally spaced from mesh structure (118) by substantially identical paths of a ballast-providing resistive layer (15), placing all microtips (14) at generally the same potential.

Abstract translation: 用于FED图像显示器的电子发射器板（110）具有从包括导电网（118）的阴极电极与绝缘层（25）间隔开的提取（栅极）电极（122）。 微尖端（14）的圆形阵列（112）同心地位于电阻层（15）的圆形网格间隔（116）内，形成在引出电极（122）中的孔（26）内。 微型插座（14）通过基本相同的镇流器提供电阻层（15）的路径与网格结构（118）横向隔开，将所有微型插头（14）放置在大致相同的电位。