Film bulk acoustic resonator having supports and manufacturing method therefore
    31.
    发明申请
    Film bulk acoustic resonator having supports and manufacturing method therefore 有权
    因此,具有支撑体和制造方法的膜体声谐振器

    公开(公告)号:US20050012571A1

    公开(公告)日:2005-01-20

    申请号:US10854793

    申请日:2004-05-27

    摘要: A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.

    摘要翻译: 薄膜体声波谐振器(FBAR)具有支撑结构,压电谐振器和信号线,其全部在半导体衬底上,例如通过通孔电连接到压电谐振器。 支撑件和/或通孔将压电谐振器安装在离半导体衬底预定距离处,从而实现谐振器的理想形状。 信号线可以包括图案化电感器。 可以在通孔和信号线之间形成电容器。 由于由于由预定距离形成的气隙可以防止由共振器的驱动引起的衬底损耗,所以可以提高谐振特性。 可以通过改变电感器的图案,电容器的电容和/或压电层的厚度来调节谐振频率,并且可以容易地实现阻抗匹配。

    Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level
    32.
    发明授权
    Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level 失效
    制造可在晶圆级真空包装的微机电系统结构的方法

    公开(公告)号:US06391673B1

    公开(公告)日:2002-05-21

    申请号:US09702849

    申请日:2000-11-01

    IPC分类号: H01L2100

    摘要: A method of fabricating a micro electromechanical system (MEMS) structure which can be vacuum-packaged at the wafer level is provided. The method includes the steps of forming a multilayered stack including a signal line on a first wafer; bonding a second wafer to the multilayered stack; polishing the first wafer to a predetermined thickness; forming a MEMS structure in a vacuum area of the first wafer and a pad outside the vacuum area, the MEMS structure and the pad being connected to the signal line; forming a structure in a third wafer to have space corresponding to the vacuum area of the MEMS structure; and bonding the third wafer to the polished surface of the first wafer in a vacuum state. For protection of the structure and maintaining a vacuum level required for operation, the fabricated structure is vacuum-packaged at the wafer level, thereby improving the yield of fabrication. In addition, since a special vacuum packaging process is not necessary, the fabrication can be simplified.

    摘要翻译: 提供了一种制造可在晶片级真空封装的微机电系统(MEMS)结构的方法。 该方法包括以下步骤:在第一晶片上形成包括信号线的多层堆叠; 将第二晶片接合到所述多层堆叠; 将第一晶片抛光至预定厚度; 在第一晶片的真空区域中形成MEMS结构,在真空区域外形成垫,MEMS结构和焊盘连接到信号线; 在第三晶片中形成具有对应于MEMS结构的真空区域的空间的结构; 以及在真空状态下将所述第三晶片接合到所述第一晶片的抛光表面。 为了保护结构并保持操作所需的真空水平,制造的结构在晶片级被真空包装,从而提高了制造的产量。 此外,由于不需要特殊的真空包装处理,因此可以简化制造。

    Tunable resonator and tunable filter
    34.
    发明授权
    Tunable resonator and tunable filter 有权
    可调谐谐振器和可调滤波器

    公开(公告)号:US08410871B2

    公开(公告)日:2013-04-02

    申请号:US12045850

    申请日:2008-03-11

    IPC分类号: H01P1/203 H01P7/08

    CPC分类号: H01P1/20336

    摘要: A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

    摘要翻译: 提供了一种可调谐滤波器,其包括一个滤波器单元,该滤波器单元包括一对彼此相对设置的微带,连接到滤波单元一侧的电容器单元和用于调节该对微带中的每一个的长度的调节单元 调节过滤器单元的电感,调节单元连接到过滤器单元的相对侧。 因此可以调节微带的长度以改变频带。

    Method for manufacturing a film bulk acoustic resonator
    36.
    发明授权
    Method for manufacturing a film bulk acoustic resonator 有权
    薄膜体声共振器的制造方法

    公开(公告)号:US07793395B2

    公开(公告)日:2010-09-14

    申请号:US11687734

    申请日:2007-03-19

    IPC分类号: H01L41/22 H01L41/00

    摘要: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

    摘要翻译: 一种薄膜体声波谐振器及其制造方法。 薄膜体声波谐振器包括基板,气相沉积在基板上的保护层,气相沉积在保护层上并距离基板的上侧预定距离的膜,以及气相沉积在 膜。 此外,制造方法包括在基板上气相沉积膜,在膜的两侧形成保护层,在膜上气相沉积层叠的共振部分,并且通过去除设置在膜之间的基板的一部分来形成气隙 保护层。 因此,膜可以以简单的结构形成并且没有应力,并且整个制造过程被简化。

    Monolithic duplexer
    37.
    发明授权
    Monolithic duplexer 有权
    单片双工器

    公开(公告)号:US07663450B2

    公开(公告)日:2010-02-16

    申请号:US11262889

    申请日:2005-11-01

    IPC分类号: H03H9/70

    摘要: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

    摘要翻译: 公开了一种超小型高性能单片双工器。 单片双工器包括基板,形成在基板的上表面上的第一区域中的透射端滤光器,形成在基板的上表面上的第二区域中的接收端滤光器,粘合在基板上的封装基板 在封装状态下将发送端滤波器和接收端滤波器封装在基板的上表面上的区域,以及形成在封装基板的一个表面上并与发送端滤波器连接的移相器 接收端滤波器分别用于截取发送端滤波器与接收端滤波器之间的信号流入。

    Bulk acoustic wave resonator, filter and duplexer and methods of making same
    38.
    发明授权
    Bulk acoustic wave resonator, filter and duplexer and methods of making same 有权
    体声波谐振器,滤波器和双工器及其制造方法

    公开(公告)号:US07622846B2

    公开(公告)日:2009-11-24

    申请号:US11098535

    申请日:2005-04-05

    IPC分类号: H01L41/09

    摘要: A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.

    摘要翻译: 具有由夹在第一和第二电极之间的压电层形成的膜的谐振器悬挂在从支撑结构的后表面形成的空腔的上方。 在一个实施例中,空腔壁基本上垂直于后表面。 在另一个实施例中,第一电极形成在空腔中,使得其与支撑结构的背面上的电极电连接。 在另一个实施例中,通过蚀刻穿过支撑结构的后表面中的通孔形成空腔,这导致在设计制造方法时更大的灵活性,同时减少了对相对于其他设计的对准的需要。

    Monolithic RF filter
    39.
    发明授权
    Monolithic RF filter 有权
    单片RF滤波器

    公开(公告)号:US07535322B2

    公开(公告)日:2009-05-19

    申请号:US11269844

    申请日:2005-11-09

    IPC分类号: H03H9/54 H03H9/56

    摘要: A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.

    摘要翻译: 由膜体声波谐振器形成的滤波器具有能够将调谐电感器制造在与谐振器阵列相同的衬底上的拓扑结构。 整个滤波器可以在单个芯片上制造,仅利用集成电路工艺。 在示例性实施例中,一对并联谐振器各自具有连接到串联谐振器的一个电极。 两个并联谐振器的其他电极彼此共同连接。 微调电感连接在公共电极和地电位之间。 第三并联谐振器连接在串联谐振器和地电位之间。

    Filter comprising inductor, duplexer using the filter and fabricating methods thereof
    40.
    发明授权
    Filter comprising inductor, duplexer using the filter and fabricating methods thereof 有权
    滤波器包括使用滤波器的电感器,双工器及其制造方法

    公开(公告)号:US07250831B2

    公开(公告)日:2007-07-31

    申请号:US11130156

    申请日:2005-05-17

    IPC分类号: H03H9/70 H03H9/54

    摘要: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

    摘要翻译: 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤光器包括:基板,其上形成有第一端口,第二端口和接地端口,以连接到外部端子; 将所述第一端口与所述基板上的所述第二端口串联连接的至少一个第一膜体声波谐振器; 至少一个第二膜体声波谐振器并联连接到形成在第一端口和第二端口之间的互连节点; 以及将第二膜体声波谐振器串联连接到接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此,可以通过简化的过程制造小尺寸的过滤器。