摘要:
A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
摘要:
A method of fabricating a micro electromechanical system (MEMS) structure which can be vacuum-packaged at the wafer level is provided. The method includes the steps of forming a multilayered stack including a signal line on a first wafer; bonding a second wafer to the multilayered stack; polishing the first wafer to a predetermined thickness; forming a MEMS structure in a vacuum area of the first wafer and a pad outside the vacuum area, the MEMS structure and the pad being connected to the signal line; forming a structure in a third wafer to have space corresponding to the vacuum area of the MEMS structure; and bonding the third wafer to the polished surface of the first wafer in a vacuum state. For protection of the structure and maintaining a vacuum level required for operation, the fabricated structure is vacuum-packaged at the wafer level, thereby improving the yield of fabrication. In addition, since a special vacuum packaging process is not necessary, the fabrication can be simplified.
摘要:
A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
摘要:
A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.
摘要:
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
摘要:
A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要:
A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要:
A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.
摘要:
A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.
摘要:
A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.