公开(公告)号：US06364958B1

公开(公告)日：2002-04-02

申请号：US09577104

申请日：2000-05-24

Applicant: Canfeng Lai ,  Michael Santiago Cox ,  Michael Barnes ,  Lily L. Pang

Inventor： Canfeng Lai ,  Michael Santiago Cox ,  Michael Barnes ,  Lily L. Pang

IPC: C23C1600

CPC classification number: H01L21/67069

Abstract: A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber has a plurality of electrically conductive bridges that connect a portion of a substrate support member with a portion of the chamber walls.

Abstract translation: 一种等离子体辅助半导体衬底处理室，具有用于防止腔室中的电弧的多个导电桥。 更具体地，腔室具有将衬底支撑构件的一部分与腔室壁的一部分连接的多个导电桥。

公开(公告)号：US20130017315A1

公开(公告)日：2013-01-17

申请号：US13183921

申请日：2011-07-15

Applicant: CANFENG LAI ,  DAVID EUGENE ABERLE ,  MICHAEL P. CAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK

Inventor： CANFENG LAI ,  DAVID EUGENE ABERLE ,  MICHAEL P. CAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK ,  PETER I. PORSHNEV

IPC: C23C16/505 ,  C23C16/52 ,  H05H1/46

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

Abstract: Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.

公开(公告)号：US20130014894A1

公开(公告)日：2013-01-17

申请号：US13190985

申请日：2011-07-26

Applicant: CANFENG LAI ,  DAVID E. ABERLE ,  MICHAEL P. KAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK ,  PETER I. PORSHNEV

Inventor： CANFENG LAI ,  DAVID E. ABERLE ,  MICHAEL P. KAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK ,  PETER I. PORSHNEV

IPC: C23F1/08 ,  C23C16/52 ,  C23C16/505

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

Abstract: Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.

Abstract translation: 提供了一种用于控制基板处理系统中的配电的方法和装置。 在一些实施例中，衬底处理系统包括具有衬底支撑件的处理室和设置在衬底支架上方的处理区域; 设置在所述处理区域上方以提供延伸穿过所述第一管道并横跨所述处理区域的第一环形路径的一部分的第一管道; 设置在所述处理区域上方的第二导管，以提供延伸穿过所述第二导管并横跨所述处理区域的第二环形路径的一部分; 耦合到所述第一和第二导管的RF发生器，以向所述第一和第二导管中的每一个提供具有第一频率的RF能量; 设置在所述RF发生器与所述第一和第二管道之间的阻抗匹配网络; 以及功率分配器，用于控制从RF发生器提供给第一和第二导管的RF能量的量。

公开(公告)号：US20110278260A1

公开(公告)日：2011-11-17

申请号：US12780531

申请日：2010-05-14

Applicant: Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

Inventor： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC: H01L21/306 ,  C23F1/00 ,  B05D1/00 ,  C23C16/00 ,  H05H1/24

CPC classification number: H01J37/3211 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J2237/33

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Abstract translation: 提供了一种用于衬底等离子体处理的方法和装置。 处理室具有基板支撑件和面向基板支撑件的盖组件。 盖组件具有等离子体源，其包括设置在导电板内的感应线圈，其可以包括嵌套的导电环。 感应线圈与导电板基本上共面，并且通过安装在形成在导电板中的通道内的绝缘体与绝缘体绝缘，或嵌套在导电环内。 在感应线圈周围设置场集中器，并通过隔离器与其隔离。 等离子体源由导电支撑板支撑。 气体分配器通过支撑板的中心开口和来自设置穿过导电板的导管的等离子体源向腔室供应气体。

公开(公告)号：US08003500B2

公开(公告)日：2011-08-23

申请号：US12503697

申请日：2009-07-15

Applicant: Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/42

CPC classification number: H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

Abstract translation: 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US07571698B2

公开(公告)日：2009-08-11

申请号：US11034515

申请日：2005-01-10

Applicant: Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

Inventor： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

IPC: C23C16/00 ,  C23C14/00

CPC classification number: H01J37/321

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract translation: 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体传送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

公开(公告)号：US06863019B2

公开(公告)日：2005-03-08

申请号：US10159794

申请日：2002-05-30

Applicant: Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

Inventor： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC: B08B7/00 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

Abstract: A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

Abstract translation: 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US06841006B2

公开(公告)日：2005-01-11

申请号：US09938399

申请日：2001-08-23

Applicant: Michael Barnes ,  Michael S. Cox ,  Canfeng Lai ,  John Parks

Inventor： Michael Barnes ,  Michael S. Cox ,  Canfeng Lai ,  John Parks

IPC: C23C16/54 ,  C30B25/08 ,  H01L21/00 ,  C23C16/00 ,  B65G49/07 ,  C23F1/00

CPC classification number: H01L21/67167 ,  C23C16/54 ,  C30B25/08 ,  H01L21/67184 ,  Y10S414/139

Abstract: A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.

公开(公告)号：US06450117B1

公开(公告)日：2002-09-17

申请号：US09633494

申请日：2000-08-07

Applicant: Laxman Murugesh ,  Padmanaban Krishnaraj ,  Michael Cox ,  Canfeng Lai ,  Narendra Dubey ,  Tom K. Cho ,  Sudhir Ram Gondhalekar ,  Lily L. Pang

Inventor： Laxman Murugesh ,  Padmanaban Krishnaraj ,  Michael Cox ,  Canfeng Lai ,  Narendra Dubey ,  Tom K. Cho ,  Sudhir Ram Gondhalekar ,  Lily L. Pang

IPC: C23C1600

CPC classification number: C23C16/45574 ,  C23C16/4402 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45508 ,  H01J37/3244 ,  H01J37/32862 ,  Y10S438/905

Abstract: A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.

Abstract translation: 衬底处理室30，其包括适于将处理气体提供到室30中以处理衬底25的第一气体分配器65，适于将清洁气体提供到腔室30中以清洁腔室的第二气体分配器215以及排气 以从腔室30排出处理气体或清洁气体。