Abstract:
A paintball assembly capable of retaining a paintball in a loading chamber using a paintball catcher is disclosed. The paintball assembly includes a loading chamber, a detent, and a bolt. The loading chamber is coupled to a loading port to receive paintballs. In one embodiment, the detent includes a paintball catcher capable of catching the paintball as it is loaded into the loading chamber. In one example, the paintball catcher is a flexible paintball catcher extending into the loading chamber and is able to catch the paintball and hold it in a predefined position. When a trigger is pulled, the bolt pushes the paintball into a firing chamber while the paintball catcher releases the paintball.
Abstract:
A paintball marker includes a main body and a dual feed adapter coupled to the main body. The dual feed adapter has a hollow interior, a top feed port and a bottom feed port. A top feed storage hopper is detachably connected to the dual feed adapter at the top feed port, and a bottom feed storage magazine is detachably connected to the dual feed adapter at the bottom feed port. A sleeve with an opening is rotatable within the dual feed adapter between a first position where the sleeve opening aligns with the top feed port for feeding therethrough a first group of paintballs from the hopper, and a second position where the sleeve opening aligns with the bottom feed port for feeding therethrough a second group of paintballs from the magazine.
Abstract:
An internal combustion engine with a plurality of cylinders, which are each assigned an inlet valve, an outlet valve and a combustion space, with an inlet camshaft connected to a camshaft adjuster, with an outlet camshaft connected to a camshaft adjuster, with a switchable inlet-valve drive which has a plurality of inlet cams for actuating the respective inlet valve, with a switchable outlet-valve drive which has a plurality of outlet cams for actuating the respective outlet valve, and with an exhaust-gas system. The internal combustion engine is operated with compression ignition or with spark ignition as a function of the operating point. For this purpose, for the compression ignition, a specific residual exhaust-gas quantity is set in the combustion space. Furthermore, the internal combustion engine is operated as a function of the operating point by means of an outlet cam.
Abstract:
A method for operating an internal combustion engine with compression ignition or with spark ignition as a function of an operating point. A specific residual exhaust-gas quantity in the combustion space is set for compression ignition. The internal combustion engine is operated as a function of the operating point by an outlet cam, by which a first outlet opening phase and a second outlet opening phase take place. The second outlet opening phase commences during an inlet opening phase. At a first operating point in a compression-ignition mode, a residual exhaust-gas quantity in a combustion space is dimensioned as a function of a valve interference set between the inlet and the outlet valve during a charge exchange. At a second operating point in the compression-ignition mode the residual exhaust-gas quantity in the combustion space is dimensioned as a function of a duration of the second outlet opening phase.
Abstract:
The present invention concerns hybrid manual-robotic system for supporting and moving a surgical instrument having active main structure (100) that comprises: a) a base (2) for attachment to an operating table having an operating surface (150); b) a hexahedral-shape frame (3), which shape is formed from a first (5, 5′) and second (4, 4′) pair of opposing parallelograms and opposing proximal (6′) and distal (6) rectangles, which frame (3) is formed by at least seven links (7, 8, 9, 10, 11, 12, 13, 22, 23) connected by revolute joints (14, 15, 16, 17, 18, 19, 20, 26, 27, 109), whereby a) a pair of parallel base links (7, 13) of the proximal rectangle (6′) is coupled to the base (2) by two revolute joints (116, 117), and are configured to lie and remain essentially perpendicular to the plane of the 10 operating surface (150) and to revolve around their longitudinal axes that coincide with the axes of revolution of joints (116, 117), whereby b) said revolute joints are configured to allow the hexahedral frame (3) to freely adopt a cube, or parallelepiped restricted by said perpendicular coupling; and whereby c) the distal rectangle (6) is coupled through a transmission means (200) to said instrument.
Abstract:
A software program on the computer system is represented by an icon, which is displayed to a user within one of several available icon-level graphical user interfaces (GUIs) of the operating system (OS). In addition to the standard icon displayed in the icon-level GUI, a license status symbol is associated/affiliated with the icon. The license status symbol indicates the license status of the particular application, from among shareware, un-licensed, valid license, expired license, expiring license, time to license expiration, and/or evaluation license. Each different license status is represented by a unique/identifiable license status symbol, and each application existing in one of these license status on the computer system are represented by its icon and associated/affiliated license status symbol. By viewing the icon and associated/affiliates license status symbol, a user is able to identify the specific license state of the application without having to open/run the application.
Abstract:
A method of forming a thin film resistor contact incorporates an etch-stop material to protect the underlying thin film resistor from a subsequent dry etching process to form a contact opening to the thin film resistor. More specifically, the method includes forming a thin film resistor, forming a first dielectric layer over the thin film resistor, forming a first opening through the first dielectric layer to expose an underlying portion of the thin film resistor, forming an etch-stop within the first opening of the first dielectric layer, forming a second dielectric layer over the etch-stop and the first dielectric layer, forming a second opening through the second dielectric layer to expose the underlying portion of the etch-stop, and forming a metal plug within the second contact opening, wherein the metal plug is in electrical contact with the thin film resistor by way of the etch-stop. Alternatively, in the case of an insulating etch-stop, the second opening through the dielectric layer is through the etch-stop, and forming a metal plug within the second contact opening, wherein the metal plug is in direct electrical contact with the thin film resistor.
Abstract:
The capacitance between the gate electrode and the source/drain regions of a semiconductor device is reduced by forming sub-spacers of a low dielectric constant (K) material at the corners of the gate electrode above the source/drain regions. Subsequently, insulating sidewall spacers are formed over the sub-spacers to shield-shallow source/drain regions from subsequent impurity implantations. The resulting semiconductor device exhibits reduced capacitance between the gate electrode and the source/drain regions, while maintaining circuit reliability.
Abstract:
A method for making 0.25 micron semiconductor chips includes annealing the metal interconnect lines prior to depositing an inter-layer dielectric (ILD) between the lines. During annealing, an alloy of aluminum and titanium forms, which subsequently volumetrically contracts, with the contraction being absorbed by the aluminum. Because the alloy is reacted prior to ILD deposition, however, the aluminum is not constrained by the ILD when it attempts to absorb the contraction of the alloy. Consequently, the likelihood of undesirable void formation in the interconnect lines is reduced. The likelihood of undesirable void formation is still further reduced during the subsequent ILD gapfill deposition process by using relatively low bias power to reduce vapor deposition temperature, and by using relatively low source gas deposition flow rates to reduce flow-induced compressive stress on the interconnect lines during ILD formation.
Abstract:
Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.