Method of allocating channel codes for a synchronous uplink of mobile communication system
    31.
    发明授权
    Method of allocating channel codes for a synchronous uplink of mobile communication system 有权
    为移动通信系统的同步上行链路分配信道码的方法

    公开(公告)号:US07161917B2

    公开(公告)日:2007-01-09

    申请号:US09984981

    申请日:2001-10-31

    CPC classification number: H04J13/16 H04W72/02 H04W72/0466 H04W72/082

    Abstract: The present invention relates to a method of allocating channel codes for synchronous uplinks in a mobile communication system using a plurality of scrambling codes for the uplinks. This channel code allocating method, when a call is requested, searches for scrambling codes having at least one unused channel code, selects a foremost scrambling code among the found scrambling codes, and allocates an unused channel code in the selected scrambling code to the requested call, and, when a call is released, checks the number of channel codes and a scrambling code used by the released call, searches for active calls using another scrambling code posterior to the scrambling code the released call has used and not more channel codes than the number of the channel codes the released call has used, and re-allocates the channel codes and the scrambling code used by the released call to at least one active call if found. This method makes full use of channel codes in one scrambling code, as possible as it can, before using ones in next scrambling code, therefore orthogonality between channels which reduces interferences between channels is remarkably enhanced.

    Abstract translation: 本发明涉及在移动通信系统中使用多个用于上行链路的扰码的同步上行链路分配信道码的方法。 该信道码分配方法在请求呼叫时搜索具有至少一个未使用信道码的扰码,在找到的扰频码中选择最前面的扰码,并将所选扰码中的未使用信道码分配给所请求的呼叫 ,并且当呼叫被释放时,检查信道码的数量和被释放的呼叫使用的扰码,使用释放的呼叫已经使用的扰码后的另一个扰码来搜索活动呼叫,而不是更多的信道码 释放的呼叫已经使用的信道码的号码,并且如果找到,将释放的呼叫使用的信道码和扰码重新分配给至少一个活动呼叫。 该方法尽可能地充分利用一个扰码中的信道码,在使用下一个扰码之前,可以使用信道码,从而显着增强了减少信道间干扰的信道之间的正交性。

    Method for providing subscriber-based ringback tone in flexible paging mode
    32.
    发明申请
    Method for providing subscriber-based ringback tone in flexible paging mode 有权
    用于以灵活寻呼模式提供基于用户的回铃音的方法

    公开(公告)号:US20060008068A1

    公开(公告)日:2006-01-12

    申请号:US10523792

    申请日:2003-08-04

    Abstract: The present invention provides a caller with an arbitrary sound chosen by a called subscriber instead of a conventional RBT (RingBack Tone) without fails even in a flexible paging mode. In the present method: both exchangers check individually whether first information on replacing RBT or not and second information informing a route to a sound providing means have been stored for a called terminal, when an originating exchanger requests a trunk connection to said both exchangers according to a flexible paging procedure, and receive the first and the second information from a home location register after requesting if said information has not been stored, and request individually a trunk connection to the sound providing means while furnishing information identifying the called, based on the already-stored or the received first and the second information; and the originating exchanger selects one of the two paths connected to said both exchangers, and delivers to a caller an RBT replacing sound determined by the sound providing means that is received through the selected path

    Abstract translation: 本发明提供一个呼叫者,即使在灵活的寻呼模式下,也不会失败被叫用户选择的任意声音而不是传统的RBT(RingBack Tone)。 在本方法中,当起始交换机根据请求到所述两个交换机的中继连接请求时,两个交换机分别检查是否已经为被叫终端存储了关于替换RBT的第一信息和通知到提供声音的路由的第二信息 灵活的寻呼过程,并且在请求是否所述信息尚未存储之后从归属位置寄存器接收第一和第二信息,并且基于已经存在的方式单独地请求提供声音的中继线连接,同时提供标识被叫的信息 存储或收到的第一和第二信息; 并且始发交换机选择连接到所述两个交换机的两条路径中的一条,并向呼叫者传送替换由通过所选路径接收的声音提供装置确定的声音的RBT

    Optical disc drive using noise reducing unit
    36.
    发明申请
    Optical disc drive using noise reducing unit 有权
    光盘驱动器采用降噪装置

    公开(公告)号:US20050086675A1

    公开(公告)日:2005-04-21

    申请号:US10895983

    申请日:2004-07-22

    CPC classification number: G11B17/056 G11B33/08 G11B33/1486

    Abstract: An optical disc drive including a main frame in which a turntable is provided; a tray on which the optical disc is mounted and which is slidable in the main frame; a cover, which covers a top surface of the main frame and includes a clamper to fix the optical disc in the turntable; and a noise reducer, which is disposed in the cover and causes air generated by rotation of the optical disc circulate from an inner circumference to an outer circumference of the optical disc and from the outer circumference to the inner circumference thereof, thereby reducing noise.

    Abstract translation: 一种光盘驱动器,包括设置有转盘的主框架; 其上安装有光盘并且可在主框架中滑动的托盘; 覆盖主框架的顶表面并包括用于将光盘固定在转台中的夹持器的盖子; 以及减振器,其设置在所述盖中并使由所述光盘旋转产生的空气从所述光盘的内周到外周循环,并且从所述外周到其内周,从而降低噪声。

    Anti-reflective coatings for use at 248 nm and 193 nm
    37.
    发明授权
    Anti-reflective coatings for use at 248 nm and 193 nm 有权
    抗反射涂层用于248 nm和193 nm

    公开(公告)号:US06686272B1

    公开(公告)日:2004-02-03

    申请号:US10020084

    申请日:2001-12-13

    Abstract: The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.

    Abstract translation: 本发明涉及碳化硅抗反射涂层(ARC)和碳氧化硅ARC。 另一个实施方案涉及用氧等离子体处理的碳氧化硅ARC。 本发明包括在半导体衬底表面上形成碳化硅层和碳氧化硅层作为ARC的方法实施例。 特别地,所述方法包括将甲基硅烷材料引入处理室中,其中它们被等离子体点燃并作为碳化硅沉积在基板表面上。 另一种方法包括将具有惰性载气的甲基硅烷前体材料用氧气引入到处理室中。 将这些材料点燃到等离子体中,并将​​碳氧化硅材料沉积到基底上。 通过调节氧气流速,可以调节碳硅氧烷层的光学性能。 在另一个实施方案中,可以用氧等离子体处理碳氧化硅层。

    Structures for Novel Three-Dimensional Nonvolatile Memory

    公开(公告)号:US20220392913A1

    公开(公告)日:2022-12-08

    申请号:US17340371

    申请日:2021-06-07

    Applicant: Sang-Yun Lee

    Inventor: Sang-Yun Lee

    Abstract: Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

    Methods for Novel Three-Dimensional Nonvolatile Memory

    公开(公告)号:US20220392910A1

    公开(公告)日:2022-12-08

    申请号:US17347237

    申请日:2021-06-14

    Applicant: Sang-Yun Lee

    Inventor: Sang-Yun Lee

    Abstract: Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

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