Abstract:
The present invention relates to a method of allocating channel codes for synchronous uplinks in a mobile communication system using a plurality of scrambling codes for the uplinks. This channel code allocating method, when a call is requested, searches for scrambling codes having at least one unused channel code, selects a foremost scrambling code among the found scrambling codes, and allocates an unused channel code in the selected scrambling code to the requested call, and, when a call is released, checks the number of channel codes and a scrambling code used by the released call, searches for active calls using another scrambling code posterior to the scrambling code the released call has used and not more channel codes than the number of the channel codes the released call has used, and re-allocates the channel codes and the scrambling code used by the released call to at least one active call if found. This method makes full use of channel codes in one scrambling code, as possible as it can, before using ones in next scrambling code, therefore orthogonality between channels which reduces interferences between channels is remarkably enhanced.
Abstract:
The present invention provides a caller with an arbitrary sound chosen by a called subscriber instead of a conventional RBT (RingBack Tone) without fails even in a flexible paging mode. In the present method: both exchangers check individually whether first information on replacing RBT or not and second information informing a route to a sound providing means have been stored for a called terminal, when an originating exchanger requests a trunk connection to said both exchangers according to a flexible paging procedure, and receive the first and the second information from a home location register after requesting if said information has not been stored, and request individually a trunk connection to the sound providing means while furnishing information identifying the called, based on the already-stored or the received first and the second information; and the originating exchanger selects one of the two paths connected to said both exchangers, and delivers to a caller an RBT replacing sound determined by the sound providing means that is received through the selected path
Abstract:
A method of forming a circuit includes providing a first substrate; positioning an interconnect region on a surface of the first substrate; providing a second substrate; positioning a device structure on a surface of the second substrate, the device structure including a stack of at least three doped semiconductor material layers; and bonding the device structure to the interconnect region.
Abstract:
Circuitry includes first and second circuits spaced apart by an interconnect region. The interconnect region includes a first interconnect and the second circuit includes a stack of semiconductor layers. The first interconnect extends between the first and second circuits to provide communication therebetween. The second circuit operates as a memory circuit.
Abstract:
A novel polyvinyl alcohol-based polymer membrane is disclosed. The novel polyvinyl alcohol-based polymer membrane of the present invention comprises two different compounds which are crosslinked by irradiating light such as UV or electronic beams or heat treatment to form a covalent bond between double bonds thereby providing improved properties such as chemical resistance and durability. This invention also relates to a process its preparation.
Abstract:
An optical disc drive including a main frame in which a turntable is provided; a tray on which the optical disc is mounted and which is slidable in the main frame; a cover, which covers a top surface of the main frame and includes a clamper to fix the optical disc in the turntable; and a noise reducer, which is disposed in the cover and causes air generated by rotation of the optical disc circulate from an inner circumference to an outer circumference of the optical disc and from the outer circumference to the inner circumference thereof, thereby reducing noise.
Abstract:
The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.
Abstract:
Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.
Abstract:
Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.
Abstract:
Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.