公开(公告)号：US08314437B2

公开(公告)日：2012-11-20

申请号：US12874425

申请日：2010-09-02

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

Abstract translation: 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。

公开(公告)号：US20120228653A1

公开(公告)日：2012-09-13

申请号：US13215659

申请日：2011-08-23

Applicant: Kunio ISHIDA ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Kunio ISHIDA ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: H01L33/50

CPC classification number: H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2933/0041 ,  H01L2933/0083

Abstract: A light emitting device of embodiments is provided with a light-emitting element emitting excitation light of a first wavelength, a first phosphor layer containing a first phosphor that converts the excitation light into first converted light of a second wavelength longer than the first wavelength, a second phosphor layer provided between the light-emitting element and the first phosphor layer, receiving the excitation light, and containing a second phosphor that converts the excitation light into second converted light of a third wavelength longer than the second wavelength, and a filter layer provided between the first phosphor layer and the second phosphor layer and constituted of a two-dimensional photonic crystal or a three-dimensional photonic crystal that transmits the excitation light and the second converted light and reflects the first converted light.

Abstract translation: 实施例的发光器件设置有发射第一波长的激发光的发光元件，包含将激发光转换成长于第一波长的第二波长的第一转换光的第一荧光体的第一荧光体层， 第二荧光体层，设置在发光元件和第一荧光体层之间，接收激发光，并且包含将激发光转换成比第二波长长的第三波长的第二转换光的第二荧光体，设置有滤光层 在第一荧光体层和第二荧光体层之间，由透射激发光和第二转换光并反射第一转换光的二维光子晶体或三维光子晶体构成。

公开(公告)号：US20120217524A1

公开(公告)日：2012-08-30

申请号：US13206649

申请日：2011-08-10

Applicant: Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/50 ,  H01L33/40

CPC classification number: H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

公开(公告)号：US08232118B2

公开(公告)日：2012-07-31

申请号：US13078240

申请日：2011-04-01

Applicant: Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori ,  Kuniaki Konno

Inventor： Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori ,  Kuniaki Konno

IPC: H01L21/00

CPC classification number: F21K9/00 ,  H01L33/507 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.

Abstract translation: 发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层 端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

公开(公告)号：US20120138896A1

公开(公告)日：2012-06-07

申请号：US13398239

申请日：2012-02-16

Applicant: Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

Inventor： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC: H01L33/04

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US20120138895A1

公开(公告)日：2012-06-07

申请号：US13398170

申请日：2012-02-16

Applicant: Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

Inventor： Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L33/04

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

Abstract translation: 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US08148890B2

公开(公告)日：2012-04-03

申请号：US12195536

申请日：2008-08-21

Applicant: Saori Abe ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Saori Abe ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/02 ,  H01L33/04

CPC classification number: G02B6/107 ,  B82Y20/00 ,  G02B3/0037 ,  G02B6/132 ,  G02B6/4207 ,  H01L33/20 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0083

Abstract: A light-emitting device includes a support substrate which includes a light-emitting layer and a light extraction surface, and a light transmission layer, formed on the light extraction surface of the support substrate, having a periodic refractive index distribution structure in an in-plane direction and a thickness direction, the light transmission layer including a plurality of projections formed of a having a refractive index lower than that of the support substrate.

Abstract translation: 发光装置包括：支撑基板，其包括发光层和光提取表面;以及透光层，形成在支撑基板的光提取表面上，具有周期性的折射率分布结构， 平面方向和厚度方向，所述光透射层包括由折射率低于所述支撑基板的折射率形成的多个突起。

公开(公告)号：US20120057338A1

公开(公告)日：2012-03-08

申请号：US13033917

申请日：2011-02-24

Applicant: Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Ryosuke Hiramatsu ,  Naotoshi Matsuda ,  Shinya Nunoue

Inventor： Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Ryosuke Hiramatsu ,  Naotoshi Matsuda ,  Shinya Nunoue

IPC: F21V9/16

CPC classification number: H05B33/14 ,  C09K11/0883 ,  C09K11/7734 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.

公开(公告)号：US20120056154A1

公开(公告)日：2012-03-08

申请号：US13037687

申请日：2011-03-01

Applicant: Kotaro ZAIMA ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro ZAIMA ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/06

CPC classification number: H01L33/0079 ,  H01L33/20 ,  H01L33/22

Abstract: A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.

Abstract translation: 通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一 电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层 基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上从第一金属层的与第一金属层的第一金属层相反的表面侧形成凹槽 并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

公开(公告)号：US20120043569A1

公开(公告)日：2012-02-23

申请号：US13033954

申请日：2011-02-24

Applicant: Iwao MITSUISHI ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue

Inventor： Iwao MITSUISHI ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue

IPC: H01L33/50 ,  H01L33/52

CPC classification number: H01L33/504 ,  C09K11/7734 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M1−x1Eux1)3−ySi13−zAl3+zO2+uN21−w  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0

Abstract translation: 根据一个实施例的发光器件包括发射波长为250nm至500nm的光的发光元件和设置在发光元件上的荧光层。 荧光层包括具有由下式（1）表示的组成和平均粒径为12μm以上的荧光体。 （M1-x1Eux1）3-ySi13-zAl3 + zO2 + uN21-w（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素 除了Al，稀土元素和IVB族元素，x1，y，z，u和w满足以下关系：0