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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20100102296A1

    公开(公告)日：2010-04-29

    申请号：US12652827

    申请日：2010-01-06

    申请人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

    发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号：US20090059986A1

    公开(公告)日：2009-03-05

    申请号：US12039303

    申请日：2008-02-28

    申请人： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

    发明人： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

    摘要： A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

    摘要翻译： 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130087805A1

    公开(公告)日：2013-04-11

    申请号：US13404531

    申请日：2012-02-24

    申请人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

    发明人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

    IPC分类号： H01L29/20

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120012884A1

    公开(公告)日：2012-01-19

    申请号：US13165837

    申请日：2011-06-22

    申请人： Eiji MURAMOTO ,  Shinya NUNOUE

    发明人： Eiji MURAMOTO ,  Shinya NUNOUE

    IPC分类号： H01L33/62

    CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

    摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

    LIGHT EMITTING DEVICE
    7.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110147776A1

    公开(公告)日：2011-06-23

    申请号：US12874839

    申请日：2010-09-02

    申请人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

    发明人： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

    IPC分类号： H01L33/58

    CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

    摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

    LIGHT-EMITTING DEVICE
    8.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110101851A1

    公开(公告)日：2011-05-05

    申请号：US12985955

    申请日：2011-01-06

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT-EMITTING DEVICE
    9.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20090058256A1

    公开(公告)日：2009-03-05

    申请号：US12143382

    申请日：2008-06-20

    申请人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    发明人： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。