HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR
    33.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR 审中-公开
    高效光发射二极管(LED)与优化的光子晶体提取器

    公开(公告)号:US20100301369A1

    公开(公告)日:2010-12-02

    申请号:US12834453

    申请日:2010-07-12

    CPC classification number: H01L33/20 H01L33/382 H01L2933/0083

    Abstract: A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating.

    Abstract translation: 具有优化光子晶体提取器的高效率和可能高度定向的发光二极管(LED)。 LED由衬底,在衬底上生长的缓冲层(如果需要),包括发射物质的活性层,定制LED中的引导结构的一个或多个光学限制层以及一个或多个衍射 光栅,其中衍射光栅是二维光子晶体提取器。 可以去除衬底并且可以在缓冲层,光子晶体和有源层上沉积金属层,其中金属层可以用作反射镜,电接触和/或有效的衍射光栅。

    LINEARLY POLARIZED BACKLIGHT SOURCE IN CONJUNCTION WITH POLARIZED PHOSPHOR EMISSION SCREENS FOR USE IN LIQUID CRYSTAL DISPLAYS
    34.
    发明申请
    LINEARLY POLARIZED BACKLIGHT SOURCE IN CONJUNCTION WITH POLARIZED PHOSPHOR EMISSION SCREENS FOR USE IN LIQUID CRYSTAL DISPLAYS 审中-公开
    线性偏振的背光源与液晶显示器中使用的极化磷光体排放屏幕相连

    公开(公告)号:US20100220262A1

    公开(公告)日:2010-09-02

    申请号:US12536400

    申请日:2009-08-05

    CPC classification number: G02F1/13362 G02F1/133617

    Abstract: A device for displaying images positions a luminescent material between a light source and a liquid crystal display (LCD). The light source, which comprises one or more nonpolar or semipolar III-nitride based light emitting diodes (LEDs), emits a primary light having a specified polarization direction and comprising one or more first wavelengths. This primary light emitted by the light source is a linearly polarized light that eliminates any need for a polarizer. The luminescent material, which comprises one or more phosphors, is optically pumped by the primary light and emits a secondary light having the polarization direction of the primary light, wherein the secondary light is comprised one or more second wavelengths that are different from the first wavelength. This secondary light emitted by the luminescent material is a colored light that eliminates any need for a color filter. The LCD receives the secondary light and displays one or more images in response thereto.

    Abstract translation: 用于显示图像的装置将光源和液晶显示器(LCD)之间的发光材料定位。 包含一个或多个非极性或半极性III族氮化物的发光二极管(LED)的光源发射具有指定偏振方向并包含一个或多个第一波长的初级光。 由光源发射的这种一次光是线偏振光,其消除了对偏振器的任何需要。 包含一种或多种磷光体的发光材料通过初级光被光泵浦并发射具有初级光的偏振方向的二次光,其中二次光包括不同于第一波长的一个或多个第二波长 。 由发光材料发射的这种二次光是一种彩色光,消除了对滤色器的任何需要。 LCD接收二次光,并响应于此显示一个或多个图像。

    HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE
    40.
    发明申请
    HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE 审中-公开
    六角形WURTZITE单晶和六角形WURTZITE单晶基板

    公开(公告)号:US20100075107A1

    公开(公告)日:2010-03-25

    申请号:US12474134

    申请日:2009-05-28

    Abstract: A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface such as {10-10}, {10-11}, {10-1-1}, {10-12}, {10-1-2}, {11-20}, {11-22}, {11-2-2} gives a higher crystal quality as compared to a c-plane seed surface such as (0001) and (000-1). Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface such as {10-12}, {10-1-2}, {11-22}, {11-2-2} gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. The crystal quality also depends on the seed surface roughness, wherein high crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.

    Abstract translation: 使用溶剂热法生长高质量体积六边形单晶的技术,以及同时实现高质量和高生长速率的技术。 晶体质量主要取决于生长面,其中非极性或半极性种子表面如{10-10},{10-11},{10-1-1},{10-12},{10-1-1} 2},{11-20},{11-22},{11-2-2}与c面种子表面(0001)和(000-1)相比,具有更高的晶体质量。 此外,生长速率强烈地取决于生长平面,其中诸如{10-12},{10-1-2},{11-22},{11-2-2}的半极性种子表面产生更高的生长 率。 通过选择合适的生长平面,可以同时实现高结晶质量和高生长速度。 晶体质量还取决于种子表面粗糙度,其中当非极性或半极性种子表面RMS粗糙度低于100nm时可实现高结晶质量; 另一方面,从Ga面或N面生长的晶体即使从原子光滑的表面生长也会导致差的晶体质量。

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