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    Semiconductor Light-Emitting Diode and Method for Producing a Semiconductor Light-Emitting Diode
    31.
    发明申请
    Semiconductor Light-Emitting Diode and Method for Producing a Semiconductor Light-Emitting Diode 有权
    半导体发光二极管及其半导体发光二极管的制造方法

    公开(公告)号：US20110198640A1

    公开(公告)日：2011-08-18

    申请号：US12920311

    申请日：2009-02-11

    申请人： Magnus Ahlstedt ,  Johannes Baur ,  Ulrich Zehnder ,  Martin Strassburg ,  Matthias Sabathil ,  Berthold Hahn

    发明人： Magnus Ahlstedt ,  Johannes Baur ,  Ulrich Zehnder ,  Martin Strassburg ,  Matthias Sabathil ,  Berthold Hahn

    IPC分类号： H01L33/60 ,  B82Y20/00

    CPC分类号： H01L33/405 ,  H01L33/42 ,  H01L33/46

    摘要： A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).

    摘要翻译： 提出了一种半导体发光二极管（10），其具有至少一个p掺杂发光二极管层（4），n掺杂发光二极管层（2）和光学活性区域（3） 掺杂的发光二极管层（4）和n掺杂发光二极管层（2），具有由透明导电氧化物构成的氧化物层（8），并且具有至少一个镜层（9），其中 氧化物层（8）设置在发光二极管层（2,4）和至少一个镜层（9）之间，并且包括面对发光二极管层（2）的第一边界面（8a） ，4）和面向所述至少一个镜层（9）的第二边界面（8b），并且其中所述氧化物层（8）的所述第二边界面（8b）具有比所述第一边界面 （8a）的氧化物层（8a）。

    LED chip
    36.
    发明授权
    LED chip 有权
    LED芯片

    公开(公告)号：US08530923B2

    公开(公告)日：2013-09-10

    申请号：US12922830

    申请日：2009-04-28

    申请人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

    发明人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

    IPC分类号： H01L33/38

    CPC分类号： H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

    摘要翻译： 描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。 触点（5）覆盖半导体层序列（2）的表面的约1％-8％。 触点（5）例如由单独的接触点（51）组成，它们布置在栅格常数为12μm的规则网格（52）的节点处。 电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

    Optoelectronic semiconductor component
    37.
    发明授权
    Optoelectronic semiconductor component 有权
    光电半导体元件

    公开(公告)号：US08502267B2

    公开(公告)日：2013-08-06

    申请号：US13142885

    申请日：2010-01-05

    申请人： Alexander Behres ,  Matthias Sabathil

    发明人： Alexander Behres ,  Matthias Sabathil

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01L2924/00

    摘要： An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.

    摘要翻译： 光电子半导体部件包括发射辐射的有源层，由包覆层包围的有源层，其中包层和/或有源层包括含铟磷化合物半导体材料，并且磷化物半导体材料包含在 元素Bi或Sb中的至少一种作为主要组V的附加元素。

    LIGHTING DEVICE
    38.
    发明申请
    LIGHTING DEVICE 有权
    照明设备

    公开(公告)号：US20130043496A1

    公开(公告)日：2013-02-21

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    39.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    光电子半导体芯片

    公开(公告)号：US20120273824A1

    公开(公告)日：2012-11-01

    申请号：US13517110

    申请日：2010-12-15

    申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    IPC分类号： H01L33/58

    CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface.

    摘要翻译： 光电半导体芯片包括半导体层序列，其具有至少间接地施加在半导体层序列的可辐射透过表面上的有源层和发光耦合层。 光输出耦合层的材料与半导体层序列的材料不同，并且光输出耦合层和半导体层序列的材料的折射率最多彼此相差20％。 光输出耦合层中的凹陷形成刻面，其中凹部不完全穿透光输出耦合层。 小面的总面积为辐射透过面积的至少25％。

    Optoelectronic Semiconductor Chip
    40.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20110284893A1

    公开(公告)日：2011-11-24

    申请号：US13056589

    申请日：2009-06-29

    申请人： Lutz Hoeppel ,  Matthias Sabathil

    发明人： Lutz Hoeppel ,  Matthias Sabathil

    IPC分类号： H01L33/60

    CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).

    摘要翻译： 给出了包括半导体层序列（2）的光电子半导体芯片（1）的描述，该半导体层序列（2）具有用于产生电磁辐射的有源区（4），并且包括结构化电流扩散层（6），其包含透明导电 并且布置在半导体层序列（2）的主区域（12）上，其中电流扩展层（6）覆盖主区域（12）的至少30％且至多60％。