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    ETCHED-FACET RIDGE LASERS WITH ETCH-STOP
    31.
    发明申请
    ETCHED-FACET RIDGE LASERS WITH ETCH-STOP 有权

    公开(公告)号：US20100015743A1

    公开(公告)日：2010-01-21

    申请号：US12567448

    申请日：2009-09-25

    Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01L21/30

    CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

    Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

    Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

    Low Cost InGaAlN Based Lasers
    32.
    发明申请
    Low Cost InGaAlN Based Lasers 有权
    低成本InGaAlN基激光器

    公开(公告)号：US20080298413A1

    公开(公告)日：2008-12-04

    申请号：US12171286

    申请日：2008-07-10

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/30 ,  H01S5/00

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干蚀刻产生长度lc和宽度bm的激光台面。 使用光刻和蚀刻的另一个顺序来形成具有台面顶部的宽度的脊状结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 芯片的长度ls和宽度bs可以分别选择等于或长于波导长度lc和台面宽度bm的方便值。 选择波导长度和宽度，使得对于给定的缺陷密度D，产量YD大于50％。

    High reliability etched-facet photonic devices
    34.
    发明授权
    High reliability etched-facet photonic devices 有权
    高可靠性蚀刻面光子器件

    公开(公告)号：US08787419B2

    公开(公告)日：2014-07-22

    申请号：US11356203

    申请日：2006-02-17

    Applicant: Alex A. Behfar

    Inventor： Alex A. Behfar

    IPC: H01S5/00

    CPC classification number: H01S5/323 ,  G02F1/17 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214

    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

    Abstract translation: 半导体光子器件表面被电介质或金属保护层覆盖。 保护层覆盖整个设备，包括在有源区域附近的面的区域，以防止裸露或未受保护的半导体区域，由此形成非常高可靠性的蚀刻面光子器件。

    Long semiconductor laser cavity in a compact chip
    35.
    发明授权
    Long semiconductor laser cavity in a compact chip 有权
    长半导体激光腔在一个紧凑的芯片

    公开(公告)号：US08605767B2

    公开(公告)日：2013-12-10

    申请号：US13281408

    申请日：2011-10-25

    Applicant: Alex A. Behfar ,  Cristian Stagarescu

    Inventor： Alex A. Behfar ,  Cristian Stagarescu

    IPC: H01S3/08 ,  H01S3/081

    CPC classification number: H01S5/10 ,  B82Y20/00 ,  H01S5/1003 ,  H01S5/1039 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/34313

    Abstract: Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

    Abstract translation: 通过使用通过蚀刻刻面形成的全内反射（TIR）表面，将长半导体激光器腔放置在相对短的长度芯片中。 在一个实施例中，通过使用三个45°倾斜的TIR刻面来连接限定激光腔的脊或掩埋异质结构（BH）波导的四条腿，沿着矩形半导体芯片的周边边缘形成激光腔。 在其他实施例中，采用甚至更多的TIR刻面和波导腿或部分来制造矩形或四边形螺旋形的更长的激光腔。 这些结构在相邻波导部分的间隔上受到限制，如果太小，则可能导致部分之间的不期望的耦合。 然而，已经显示使用蚀刻在相邻部分之间的切口减小了这种耦合效应。

    Low Cost InGaAlN Based Lasers
    38.
    发明申请
    Low Cost InGaAlN Based Lasers 审中-公开
    低成本InGaAlN基激光器

    公开(公告)号：US20100091809A1

    公开(公告)日：2010-04-15

    申请号：US12637893

    申请日：2009-12-15

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/323

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干蚀刻产生长度lc和宽度bm的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 芯片的长度ls和宽度bs可以分别选择等于或长于波导长度lc和台面宽度bm的方便值。 选择波导长度和宽度，使得对于给定的缺陷密度D，产量YD大于50％。

    AlGaInN-based lasers with dovetailed ridge
    40.
    发明授权
    AlGaInN-based lasers with dovetailed ridge 有权
    基于AlGaInN的激光器，具有燕尾岭

    公开(公告)号：US07542497B2

    公开(公告)日：2009-06-02

    申请号：US11826809

    申请日：2007-07-18

    Applicant: Alex A. Behfar

    Inventor： Alex A. Behfar

    IPC: H01S5/00

    CPC classification number: H01S5/0201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0203 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/22 ,  H01S5/34333

    Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

    Abstract translation: 一种用于制造能够发射蓝光的激光的工艺，其中在CAIBE中，使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜，并且其中所述激光波导具有向内 倾斜的侧壁。

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