公开(公告)号：US08900405B2

公开(公告)日：2014-12-02

申请号：US11985579

申请日：2007-11-14

申请人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

发明人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32412

摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.

摘要翻译： 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

公开(公告)号：US08431911B2

公开(公告)日：2013-04-30

申请号：US12759587

申请日：2010-04-13

申请人： Majeed A. Foad ,  Stephen Moffatt

发明人： Majeed A. Foad ,  Stephen Moffatt

IPC分类号： A61B6/00 ,  G01N21/64 ,  G11B5/02 ,  G11B21/02 ,  G11B11/00 ,  G03G13/00 ,  G03G19/00

CPC分类号： G03B27/42 ,  G11B5/8404 ,  H01F10/187 ,  H01F41/34

摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.

摘要翻译： 提供了一种用于制造磁存储介质的方法和装置。 用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。 通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，光束可以被分成小束束，或者可以通过 一组发射器。 然后通过光学或电场将子束聚焦到期望的尺寸和分布。 所得到的束束可以进一步通过穿过任何所需形状的孔。 所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

公开(公告)号：US20110226617A1

公开(公告)日：2011-09-22

申请号：US13069205

申请日：2011-03-22

申请人： Ralf Hofmann ,  Majeed A. Foad

发明人： Ralf Hofmann ,  Majeed A. Foad

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/06 ,  C23C14/46

CPC分类号： C23C14/3407 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/354 ,  H01J37/32357 ,  H01J37/34 ,  H05H1/46 ,  H05H2001/4667

摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

摘要翻译： 溅射沉积系统包括真空室，其包括用于在真空室中保持真空的真空泵，用于向真空室供应处理气体的气体入口，真空室内的溅射靶和衬底保持器，以及附着的等离子体源 到真空室并且远离溅射靶定位，等离子体源被配置成形成延伸到真空室中的高密度等离子体束。 等离子体源可以包括矩形横截面源室，电磁体和射频线圈，其中矩形横截面源室和射频线圈被配置为给予高密度等离子体束细长的卵形横截面 。 此外，溅射靶的表面可以被配置为非平面形式，以在衬底保持器上的衬底的表面处提供均匀的等离子体能量沉积到靶中和/或均匀的溅射沉积。 溅射沉积系统可以包括等离子体扩散系统，用于重新形成高密度等离子体束，以完全和均匀地覆盖溅射靶。

公开(公告)号：US07989329B2

公开(公告)日：2011-08-02

申请号：US11963034

申请日：2007-12-21

申请人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

发明人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/38

CPC分类号： H01L21/2254 ,  H01L21/2253

摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

摘要翻译： 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US07968439B2

公开(公告)日：2011-06-28

申请号：US12069424

申请日：2008-02-06

申请人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

发明人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

IPC分类号： H01L21/425

CPC分类号： H01J37/32412 ,  C23C14/48 ,  C23C14/564 ,  H01L21/2236

摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

摘要翻译： 在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

公开(公告)号：US20100258431A1

公开(公告)日：2010-10-14

申请号：US12756793

申请日：2010-04-08

申请人： Stephen Moffatt ,  Majeed A. Foad

发明人： Stephen Moffatt ,  Majeed A. Foad

IPC分类号： C23C14/46

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/746 ,  H01F10/16 ,  H01F10/265 ,  H01F41/34

摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically susceptible material, and a patterned resist layer is formed over the magnetically susceptible material. Atom groups are directed toward the substrate, penetrating the resist and implanting into the magnetically susceptible layer. Thick portions of the resist prevent implantation in some areas to form a pattern of magnetic properties on the substrate. Energy and composition of the atom groups, thickness and hardness of the resist, and lattice energy of the magnetically susceptible material may all be adjusted to yield desired fragmentation and implantation of the atom groups, including in some embodiments mere impact on the surface without implanting. A protective layer and a lubricating layer are formed over the patterned magnetically susceptible layer.

摘要翻译： 提供了一种用于制造磁存储介质的方法和装置。 用磁敏材料涂覆结构基材，并且在磁敏感材料上形成图案化的抗蚀剂层。 原子团指向衬底，穿透抗蚀剂并注入到磁敏感层中。 抗蚀剂的厚部分防止在一些区域中的注入以在基底上形成磁性的图案。 原子组的能量和组成，抗蚀剂的厚度和硬度以及磁敏材料的晶格能都可以被调整以产生所需的原子团的分裂和注入，包括在一些实施方案中仅仅对表面的冲击而不会进行注入。 在图案化的易磁化层上形成保护层和润滑层。

公开(公告)号：US20100221583A1

公开(公告)日：2010-09-02

申请号：US12703897

申请日：2010-02-11

申请人： Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

发明人： Majeed A. Foad ,  Jacob Newman ,  Jose Antonio Marin ,  Daniel Hoffman ,  Stephen Moffatt ,  Steven Verhaverbeke

IPC分类号： G11B5/82 ,  C23C16/44 ,  C23C16/04

CPC分类号： G11B5/82 ,  C23C14/48 ,  C23C14/50 ,  C23C16/00 ,  C23F1/00 ,  G11B5/84 ,  G11B5/855 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

摘要翻译： 提供了用于形成具有磁性图案化表面的基底的方法和设备。 在基板上形成包含一种或多种具有磁性的材料的磁性层。 对磁性层进行图案化处理，其中磁性层的表面的选定部分被改变，使得改变的部分与未改变的部分具有不同的磁性，而不改变衬底的形貌。 在图案化的磁性层上沉积保护层和润滑剂层。 图案化通过使衬底暴露于不同形式的能量的许多工艺来完成。 本文公开的装置和方法能够同时或顺序地翻转来处理衬底的两个主表面。 在一些实施例中，衬底表面的磁特性可以通过等离子体暴露均匀地改变，然后通过暴露于图案化能量选择性地恢复。

公开(公告)号：US20100173484A1

公开(公告)日：2010-07-08

申请号：US12730068

申请日：2010-03-23

申请人： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

发明人： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

IPC分类号： H01L21/263

CPC分类号： H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

摘要： A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

摘要翻译： 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

公开(公告)号：US07732269B2

公开(公告)日：2010-06-08

申请号：US11742932

申请日：2007-05-01

申请人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

发明人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.

摘要翻译： 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

公开(公告)号：US20090233384A1

公开(公告)日：2009-09-17

申请号：US12049047

申请日：2008-03-14

申请人： Majeed A. Foad ,  Shijian Li

发明人： Majeed A. Foad ,  Shijian Li

IPC分类号： H01L21/66

CPC分类号： G01N21/68 ,  G01N21/59 ,  H01L21/26513 ,  H01L22/12 ,  H01L22/26

摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.

摘要翻译： 本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。 在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收 通过位于基板下方的传感器进行光照射。 该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生 一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。