公开(公告)号：US07740704B2

公开(公告)日：2010-06-22

申请号：US10875949

申请日：2004-06-25

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract translation: 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US07582186B2

公开(公告)日：2009-09-01

申请号：US10739127

申请日：2003-12-19

Applicant: Eric J. Strang ,  Steven T. Fink

Inventor： Eric J. Strang ,  Steven T. Fink

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32642 ,  H01L21/68735

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract translation: 被配置为联接到衬底保持器的聚焦环包括暴露于过程的第一表面; 与所述第一表面相对的第二表面，用于联接到所述衬底保持器的上表面; 用于面对衬底的周边的内部径向边缘; 和外部径向边缘。 第二表面还包括一​​个或多个接触特征，每个接触特征被配置为与形成在衬底保持器的上表面内的一个或多个接收特征配合。 聚焦环还可以包括用于将聚焦环机械地夹持到基板保持器的夹紧特征。 此外，可以将气体供应到驻留在聚焦环上的一个或多个接触特征与衬底保持器上的一个或多个接收特征之间的接触空间。

公开(公告)号：US07347901B2

公开(公告)日：2008-03-25

申请号：US10721500

申请日：2003-11-26

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: C23C16/00 ,  H05B3/68

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如气体或真空填充室）更低的导热系数的绝缘材料制成。

公开(公告)号：US20070298972A1

公开(公告)日：2007-12-27

申请号：US11425883

申请日：2006-06-22

Applicant: MARTIN KENT ,  Eric J. Strang

Inventor： MARTIN KENT ,  Eric J. Strang

IPC: H01L39/24

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including source temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在包括源温度和气体压力在内的受控条件下暴露于气态化学物质，包括HF和任选的NH 3。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US06806653B2

公开(公告)日：2004-10-19

申请号：US10355203

申请日：2003-01-31

Applicant: Eric J. Strang ,  Andrej S. Mitrovic

Inventor： Eric J. Strang ,  Andrej S. Mitrovic

IPC: H01J724

CPC classification number: H01J37/32174 ,  H01J37/32082

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract translation: 一种用于等离子体处理系统的电极组件，其包括适于耦合到RF能量源的基极电极，可移除地耦合到所述基极电极的可移除电极以及插入所述基极电极的表面和 可拆卸电极。

公开(公告)号：US08562743B2

公开(公告)日：2013-10-22

申请号：US13098991

申请日：2011-05-02

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C18/00 ,  C23C18/1619 ,  C23C18/1658 ,  C23C18/1678 ,  C23C18/1685 ,  C23C18/40

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Abstract translation: 一种高压处理系统，包括被构造成容纳基板的室。 流体引入系统包括配置成供应第一组合物和第二组合物的至少一种组合物供应系统，以及配置成供应流体的至少一个流体供应系统。 流体供应系统被配置为交替地和不连续地将第一组合物和第二组合物引入流体内的室。

公开(公告)号：US20120067866A1

公开(公告)日：2012-03-22

申请号：US13307176

申请日：2011-11-30

Applicant: Steven T. FINK ,  Eric J. Strang

Inventor： Steven T. FINK ,  Eric J. Strang

IPC: H05B3/02 ,  F25B21/02

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08092602B2

公开(公告)日：2012-01-10

申请号：US11961355

申请日：2007-12-20

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: C23C16/00 ,  C23C16/46

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08050900B2

公开(公告)日：2011-11-01

申请号：US10673583

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型执行第一原理模拟，以提供与由半导体处理工具执行的处理相关的虚拟传感器测量，并且虚拟传感器测量用于促进由半导体处理工具执行的处理。

公开(公告)号：US08014991B2

公开(公告)日：2011-09-06

申请号：US10673501

申请日：2003-09-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  G06F2217/12 ,  G06F2217/80 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

Abstract translation: 一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟，以提供由半导体处理工具执行的处理的仿真结果，并且将模拟结果用作表征由半导体处理执行的处理的数据集的一部分 工具。