摘要:
A process for the synthesis of derivatives of materials containing an imide group conjugated to an aromatic moiety to form an ester, a thioester, an amide, a ketone, and silylesters. Electrons are supplied to redox sites to form a reduced imide material. The reduced imide material is contacted with a nucleophile which opens the imide ring of the reduced imide and chemically combines with a carbonyl carbon atom of the open imide ring to form an imide derivative.
摘要:
A photoimageable, aqueous acid soluble polyimide polymer comprising an anhydride, including a substituted benzophenone nucleus, a diamine reacted with the anhydride to form a photosensitive polymer intermediate, and at least 60 Mole % of solubilizing amine reacted with the photosensitive polymer intermediate to form the photoimageable, aqueous acid soluble polyimide polymer. An emulsion for electrophoretic deposition of a coating of a photoimageable, aqueous acid soluble polyimide polymer comprises a dispersed phase, including the photoimageable aqueous acid soluble polyimide polymer, dissolved in an organic solvent and a dispersion phase including a coalescence promoter and water. The emulsion may be applied, by electrophoretic deposition, to a conductive structure to provide a photoimageable coating on the conductive structure. After exposing the coating to a pattern of radiation for photocrosslinking exposed parts of the photoimageable aqueous acid soluble polyimide polymer, an aqueous acid developer solution removes unexposed photoimageable aqueous acid soluble polyimide polymer to reveal a crosslinked polyimide polymer image of the radiation pattern.
摘要:
This invention describes a new process for the selective isolation of through holes in the production of a multi-layer printed circuit card which allows for substantially smaller holes through reference layers to be built, leading to substantially better electrical isolation of signal traces on adjacent wiring layers, and for substantially improved current carrying capacity in the reference layers. This invention also describes a process to allow reference layers of different thickness from adjacent signal layers, even if they are part of the same `core`. Several different process flows are disclosed, leading to substantially the same structure but with varying degrees of complexity and quality of the finished product.
摘要:
A multilevel electronic package comprising at least two levels, each level including a poly(aryl ether benzimidazole), a polymide and copper. A process of preparing this package is disclosed. Several novel poly(aryl ether benzimidazoles) useful in preparing this package are also set forth.
摘要:
The disclosure describes a multilayer article of manufacture comprising a substrate having adhered to it a terminally unsaturated adhesive polyimide, where the surface of the adhesive opposite the substrate is adhered to a polyimide, the article further characterized in having one set or a plurality of alternating layers of the terminally unsaturated adhesive polyimide and the polyimide. the bonding operation.A novel adhesive polyimide is also described which is an adhesive polyimide such as ODPA-APB terminated with unsaturated heterocyclic monoamines such as azaadenines, aminobenzotriazoles, aminopurines or aminopyrazolopyrimidines and optionally anhydrides, aminoacetylenes, vinylamines or amino phosphines. The novel polyimide may also contain unsaturated heterocyclic groups in the polymer backbone or chain, either as a partial or complete replacement for the aromatic diamines used in synthesizing the polyimide. This novel adhesive polyimide in this invention acts as an adhesive layer for the polymer-substrate (copper, polymer, glass ceramic) interface as well as a copper diffusion barrier layer for the polymer copper interface.
摘要:
A curable material comprising a blend of a fluorine-containing cyanate and a fluorine-containing poly(arylene ether) wherein said cyanate is a monomer having the structureN.ident.C--O--R--.sub.n --O--C.ident.Nsaid fluorine containing poly(arylene ether) has the structureX--R--.sub.m --Xwherein X is any group capable of reacting with a --C.ident.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100;said material being heat-curable at a temperatures between 180.degree. and 325.degree. C.;said material in the cured state comprising a fluorine-containing polycyanurate network having a plurality of discrete phases of said fluorine-containing thermoplastic polymer dispersed therein wherein said thermoplastic polymer phases are of submicron size.
摘要:
An electronic circuit package comprising an electrically conductive circuit layer on a polymer, ceramic or multi-layer substrate wherein a curable dielectric material is applied over the electrically conductive circuit layer. The curable dielectric material comprises a blend of a fluorine-containing cyanate and a fluorine-containing arylene ether polymer. The cyanate is a monomer having the structureN.tbd.C--O--R--[R.sup.1 ].sub.n --O--C.tbd.Nand the fluorine containing arylene ether polymer has the structureX--R--[R.sup.1 ].sub.m --Xwherein X is any group capable of reacting with a --C.tbd.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100.The dielectric material in the cured state comprises a fluorine-containing polycyanurate network having a plurality of discrete phases of the fluorine-containing thermoplastic polymer dispersed therein. The thermoplastic polymer phases are of submicron size.
摘要翻译:一种电子电路封装,包括在聚合物,陶瓷或多层基底上的导电电路层,其中可固化介电材料施加在导电电路层上。 可固化电介质材料包括含氟氰酸酯和含氟亚芳基醚聚合物的共混物。 氰酸酯是具有结构N 3BOND C-O-R- [R 1] n -O-C 3 N N的单体,含氟亚芳基醚聚合物具有X-R- [R 1] m -X的结构,其中X是可与-C 3 N N基反应的基团; R是可以是或不是氟取代的脂族或芳族基团; R1是脂族或芳族基团,其可以是或不是氟取代的,或者R1选自醚,羰基,砜,氧化膦和硫化物,并且R或R 1中的至少一个必须是氟取代的; n为0-10; m为0-100。 固化状态下的电介质材料含有分散在其中的含氟热塑性聚合物的多个离散相的含氟聚氰脲酸酯网络。 热塑性聚合物相具有亚微米尺寸。
摘要:
A polymeric substrate is exposed to an oxygen containing plasma; and then exposed to a reducing atmosphere at an elevated temperature. The reducing treatment reverses the effects on the polymer surface chemistry imparted by action of the oxidizing plasma. In this manner, the original electroactive properties of certain polymers are regenerated at the surface.
摘要:
A prepreg which is heat curable within a temperature range of between about 200.degree. C. and 325.degree. C. comprising a reinforcing material impregnated with a curable material said curable material comprising a blend of a fluorine-containing cyanate and a fluorine-containing arylene ether polymer wherein said cyanate is a monomer having the structureN.tbd.C--O--R--[R.sup.1 ].sub.n --O--C.tbd.Nsaid fluorine containing arylene ether polymer has the structureX--R--[R.sup.1 ].sub.m --Xwherein X is any group capable of reacting with a --C.tbd.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100;said material in the cured state comprising a fluorine-containing polycyanurate network having a plurality of discrete phases of said fluorine-containing thermoplastic polymer dispersed therein wherein said thermoplastic polymer phases are of submicron size.
摘要:
The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.