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337 条记录 (耗时 0.042 秒)

    POWER TRANSISTOR WITH CONTROLLABLE REVERSE DIODE
    31.
    发明申请
    POWER TRANSISTOR WITH CONTROLLABLE REVERSE DIODE 有权
    具有可控逆转二极管的功率晶体管

    公开(公告)号：US20130069710A1

    公开(公告)日：2013-03-21

    申请号：US13238576

    申请日：2011-09-21

    申请人： Franz Hirler ,  Lutz Goergens ,  Martin Feldtkeller

    发明人： Franz Hirler ,  Lutz Goergens ,  Martin Feldtkeller

    IPC分类号： H03K3/313

    CPC分类号： H01L29/0623 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7817 ,  H01L29/782 ,  H01L29/7828 ,  H01L29/7831 ,  H01L29/7832 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.

    摘要翻译： 电子电路包括可以以反向操作模式操作的晶体管器件和控制电路。 晶体管器件包括源极区域，漏极区域，体区域和漂移区域，与源极区域电连接的源极电极，在体区域和漂移区域之间形成的pn结，邻近体区域的栅电极 并且与身体区域介电绝缘，以及与漂移区域相邻的耗尽控制结构。 耗尽控制结构具有控制端子，并且被配置成取决于在控制端子处接收到的驱动信号而在漂移区域中产生耗尽区域。 控制电路耦合到耗尽控制结构的控制端，并且被配置为当晶体管器件以反向操作模式工作时驱动耗尽控制结构以产生耗尽区。

    Power Transistor Device Vertical Integration
    33.
    发明申请
    Power Transistor Device Vertical Integration 有权
    功率晶体管器件垂直整合

    公开(公告)号：US20120256250A1

    公开(公告)日：2012-10-11

    申请号：US13082679

    申请日：2011-04-08

    申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

    发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

    IPC分类号： H01L27/06 ,  H01L21/336

    CPC分类号： H01L21/823487 ,  H01L27/0694 ,  H01L27/1207 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.

    摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。

    Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure
    34.
    发明授权
    Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure 有权
    半导体结构，半导体结构的操作方法及半导体结构的制造方法

    公开(公告)号：US08247865B2

    公开(公告)日：2012-08-21

    申请号：US11543732

    申请日：2006-10-05

    申请人： Franz Hirler

    发明人： Franz Hirler

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

    摘要： A semiconductor structure has a substrate with a first main surface and a second main surface, the substrate comprising a gate electrode region, a channel region, wherein a conductive channel can be generated, and a gate electrode insulation between the gate electrode region and the channel region.Further, a field electrode region with a curved external surface is provided for increasing a breakdown voltage of the semiconductor structure, wherein the field electrode region has an extension in every direction in parallel to the first main surface, which is lower than a maximum extension in the one direction perpendicular to the second main surface.

    摘要翻译： 半导体结构具有具有第一主表面和第二主表面的衬底，所述衬底包括栅电极区，沟道区，其中可以产生导电沟道，以及栅极电极区域和沟道之间的栅电极绝缘 地区。 此外，提供具有弯曲外表面的场电极区域，用于增加半导体结构的击穿电压，其中场电极区域在与第一主表面平行的每个方向上延伸，其低于最大延伸 垂直于第二主表面的一个方向。

    Trench MOSFET semiconductor device and manufacturing method therefor
    36.
    发明授权
    Trench MOSFET semiconductor device and manufacturing method therefor 有权
    沟槽MOSFET半导体器件及其制造方法

    公开(公告)号：US08203181B2

    公开(公告)日：2012-06-19

    申请号：US12540860

    申请日：2009-08-13

    申请人： Franz Hirler

    发明人： Franz Hirler

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803

    摘要： A semiconductor device having a semiconductor body, a source metallization arranged on a first surface of the semiconductor body and a trench including a first trench portion and a second trench portion and extending from the first surface into the semiconductor body is provided. The semiconductor body further includes a pn-junction formed between a first semiconductor region and a second semiconductor region. The first trench portion includes an insulated gate electrode which is connected to the source metallization, and the second trench portion includes a conductive plug which is connected to the source metallization and to the second semiconductor region.

    摘要翻译： 具有半导体本体的半导体器件，布置在半导体本体的第一表面上的源极金属化以及包括第一沟槽部分和第二沟槽部分并且从第一表面延伸到半导体本体中的沟槽。 半导体本体还包括在第一半导体区域和第二半导体区域之间形成的pn结。 第一沟槽部分包括连接到源极金属化的绝缘栅电极，并且第二沟槽部分包括连接到源极金属化和第二半导体区的导电插塞。

    Trench Structures in Direct Contact
    38.
    发明申请
    Trench Structures in Direct Contact 有权
    直接接触的沟槽结构

    公开(公告)号：US20120049274A1

    公开(公告)日：2012-03-01

    申请号：US12872201

    申请日：2010-08-31

    申请人： Brahim Elattari ,  Franz Hirler

    发明人： Brahim Elattari ,  Franz Hirler

    IPC分类号： H01L29/78 ,  H01L21/761 ,  H01L29/06

    CPC分类号： H01L21/743 ,  H01L29/0615 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7809 ,  H01L29/781

    摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer to the substrate and includes sidewall insulation and conductive material in electrical contact with the substrate at a bottom of the first trench structure. A second trench structure extends through the epitaxial layer to the buried layer and includes sidewall insulation and conductive material in electrical contact with the buried layer at a bottom of the second trench structure. A region of insulating material laterally extends from the conductive material of the first trench structure to the conductive material of the second trench structure and longitudinally extends to a substantial depth of the second trench structure.

    摘要翻译： 半导体结构包括第一导电性的半导体衬底，衬底上具有第二导电性的外延层，以及插入在衬底和外延层之间的第二导电体的掩埋层。 第一沟槽结构延伸穿过外延层和掩埋层到衬底，并且包括在第一沟槽结构的底部与衬底电接触的侧壁绝缘和导电材料。 第二沟槽结构延伸穿过外延层到掩埋层，并且包括在第二沟槽结构的底部与掩埋层电接触的侧壁绝缘体和导电材料。 绝缘材料的区域从第一沟槽结构的导电材料横向延伸到第二沟槽结构的导电材料，并纵向延伸到第二沟槽结构的基本深度。