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公开(公告)号：US5946587A
公开(公告)日：1999-08-31
申请号：US741352
申请日：1996-10-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.
摘要翻译： 本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状 通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到 狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型 层成膜室具有设置在n型或p型层上的清除气体导入位置 成膜室一侧离开气门分离室的中心。
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公开(公告)号：US5787565A
公开(公告)日：1998-08-04
申请号：US677037
申请日：1996-07-08
申请人： Giichi Matsuo , Soichi Aoyama , Akira Sakai
发明人： Giichi Matsuo , Soichi Aoyama , Akira Sakai
CPC分类号： B24B5/38 , B21B1/466 , B21B15/0085 , B21B45/04 , B21B1/18 , B21B45/08 , Y10T29/49975 , Y10T29/49988 , Y10T29/49991
摘要： Billets 10 which were continuously cast in a continuous casting machine 1 are directly supplied to a joining line 12. Scale on the billets is removed by a de-scaling apparatus 3. Then the rear end of a preceding billet is welded with the front end of a succeeding billet using a travelling flash butt welder 4 to produce a continuous billet. A burr on the welded part 15 is removed by grinders 51-53 in a travelling burr-removing apparatus 5. The continuous billet is heated in an induction heater 6, and then is continuously rolled in a rolling mill line.
摘要翻译： 在连续铸造机1中连续铸造的坯料10直接供给到接合线12.通过除垢装置3除去坯料上的鳞片。然后将前一个坯料的后端焊接在 使用旅行闪光对焊机4的后续坯料来生产连续坯料。 焊接部15上的毛刺在移动式毛刺去除装置5中由研磨机51-53除去。连续坯料在感应加热器6中加热，然后在轧机生产线中连续轧制。
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公开(公告)号：US5769963A
公开(公告)日：1998-06-23
申请号：US697783
申请日：1996-08-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/03682 , H01L31/075 , H01L31/206 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.
摘要翻译： 一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第 第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸 第一半导体层中的晶体在第一电极侧变化较小。 这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。
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公开(公告)号：US5593497A
公开(公告)日：1997-01-14
申请号：US415580
申请日：1995-04-03
申请人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
发明人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
IPC分类号： H01L21/205 , C23C16/02 , C23C16/04 , C23C16/24 , C23C16/30 , C23C16/452 , C30B25/00 , C30B25/18 , H01L21/20 , H01L21/31 , H01L21/84 , C30B25/02
CPC分类号： C23C16/04 , C23C16/24 , C23C16/452 , C30B25/18 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02642 , H01L21/02647 , F04C2240/603
摘要： A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).
摘要翻译： 形成沉积膜的方法包括以下步骤：将用于形成沉积膜的气态原料中的任一种原料（A）和具有氧化作用性质的气态卤化氧化剂引入所述起始材料上， 预先设置成膜形成空间，其中具有用于形成沉积膜的具有成为晶体的材料的基板或者能够在其表面上选择性地分散形成晶核的材料预先布置成使所述起始材料（A）吸附在表面上 的所述衬底以形成吸附层（I）和将另一种原料（B）引入所述成膜空间的步骤，从而在所述吸附层（I）上引起表面反应以形成结晶沉积膜 （一世）。
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公开(公告)号：US5350680A
公开(公告)日：1994-09-27
申请号：US976993
申请日：1993-02-02
申请人： Matsuhisa Inoue , Akira Sakai
发明人： Matsuhisa Inoue , Akira Sakai
CPC分类号： C12Q1/34 , G01N2333/986 , G01N2415/00 , Y10S435/81 , Y10S435/975
摘要： A cephalosporinase testing agent comprising a cephalosporin antibiotic, a penicillinase inhibitor in an amount of 20% by weight or less based on the weight of the cephalosporin-antibiotic, and a pH indicator which may be bromcresol purple is provided. A cephalosporinase producing bacteria can be judged by smearing a sample containing bacteria to be tested on the testing agent and observing the color tone change. According to this agent, cephalosporinase-active penicillinase producing bacteria are judged cephalosporinase-negative owing to the action of the penicillinase inhibitor, which may be clavulanic acid. Therefore, since only cephalosporinase producing bacteria are judged cephalosporinase-positive, this agent enables error free judgment.
摘要翻译： PCT No.PCT / JP91 / 01732 Sec。 371日期：1993年2月2日 102（e）日期1993年2月2日PCT 1991年12月18日PCT PCT。 第WO92 / 11386号公报 日期：1992年7月9日。包含头孢菌素抗生素，基于头孢菌素 - 抗生素重量的20重量％以下的青霉素酶抑制剂和可以是溴甲酚紫的pH指示剂的头孢菌素试验剂 。 可以通过在测试剂上涂抹含有待测细菌的样品并观察色调变化来判断产生头孢菌素的细菌。 根据该试剂，由于可能是克拉维酸的青霉素酶抑制剂的作用，头孢菌素酶活性青霉素酶产生菌被判定为头孢菌素阴性。 因此，由于只有头孢菌素产生菌被判断为头孢菌素阳性，所以该试剂能够进行无错误判断。
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公开(公告)号：US4939363A
公开(公告)日：1990-07-03
申请号：US370819
申请日：1989-06-23
申请人： Hiroshi Bando , Akira Sakai
发明人： Hiroshi Bando , Akira Sakai
IPC分类号： G01B7/34 , G01N23/00 , G01N27/00 , G01N37/00 , G01Q10/00 , G01Q30/04 , G01Q30/08 , G01Q30/10 , G01Q30/20 , G01Q60/10 , G01Q60/16 , H01J37/26 , H01J37/28 , H01L21/66
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q30/16 , G01Q60/54 , Y10S977/852 , Y10S977/861
摘要： A scanning tunneling microscope according to the present invention comprises a tip for emitting spin-polarized electrons and a magnet for applying a magnetic field to this tip. This tip is constituted of a metal needle made of a tungsten and an EuS layer about 400 .ANG. which is coated on the surface of the metal needle. This tip is brought to such a close distance to the surface of the specimen that tunnel current flows. A magnetic field is applied to the axial direction of the tip a bias voltage is applied between the tip and the specimen and the tip is made to scan the surface of the specimen. The tip having a magnetic field applied to the axial direction thereof emits only spin-polarized electrons with the electron spins oriented in the axial direction. The spin-polarized electrons flows only in the area at the surface of the specimen where empty states for the electrons having spins in the parallel direction are distributed. By detecting the flow of the electrons, that is, the tunnel current, it is possible to obtain the distribution of the electrons having downward or downward spins. The shape of the pointed end of the tip is almost the same as that of a tip used in an ordinary STM. This makes it possible to measure the distribution of the electron spins with an atomic scale resolution.
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公开(公告)号：US4873125A
公开(公告)日：1989-10-10
申请号：US30115
申请日：1987-03-26
申请人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
发明人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
IPC分类号： H01L31/0248 , C23C16/24 , C23C16/30 , C23C16/44 , C23C16/452 , H01L21/205
CPC分类号： H01L21/02422 , C23C16/24 , C23C16/452 , H01L21/02381 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (I) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said adsorption layer (I) to occur and form a deposited film.
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公开(公告)号：US4644110A
公开(公告)日：1987-02-17
申请号：US761045
申请日：1985-07-31
申请人： Hironobu Watanabe , Akira Sakai
发明人： Hironobu Watanabe , Akira Sakai
CPC分类号： H01H11/0056 , H01H23/006
摘要： A dual in-line package (DIP) switch includes movable terminals and fixed terminals all of which are inserted in a wafer by insert molding. The two rows of terminals have terminal portions including contact portions. The terminal portions of the two rows are disposed substantially parallel to each other and spaced apart a given distance within a casing in such a way that the corresponding contact portions can either make or break contact with each other.
摘要翻译： 双列直插封装（DIP）开关包括可移动端子和固定端子，所有这些端子均通过嵌件成型插入晶片。 两排端子具有包括接触部分的端子部分。 两排的端子部分彼此大致平行地设置并且在壳体内以给定的距离间隔开，使得相应的接触部分可以彼此形成或断开接触。
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公开(公告)号：US4187685A
公开(公告)日：1980-02-12
申请号：US876944
申请日：1978-02-10
申请人： Kunio Tsuji , Katsukuni Hisano , Akira Sakai , Shozo Nakamura
发明人： Kunio Tsuji , Katsukuni Hisano , Akira Sakai , Shozo Nakamura
CPC分类号： F01K13/02
摘要： A method and system for effecting control governing of a steam turbine wherein the steam chamber of a first stage nozzle is divided into a plurality of steam compartments, control valves each connected to one of the steam compartments are individually operated for controlling the flow rate of steam introduced into the turbine, and the governing of the nozzle is effected by adjusting the flow rate of steam in accordance with a load. At low load, the degree of opening of the control valves is kept constant and the turbine is driven by steam of a reduced pressure by reducing the pressure of the steam at the inlet of the turbine so as to maintain, in a low load region, the volume flow rate of steam for a high load region. To cope with a change in the value of the load, the degree of opening corresponding to a predetermined change in the value of the load is set beforehand for each control valve. When the change in the value of the load is smaller than the predetermined change in the value of the load, the degree of opening of the control valve involved is adjusted. Conversely, when the change in the value of the load is greater than the predetermined change in the value of the load, the pressure of the steam at the inlet of the turbine is controlled.
摘要翻译： 一种用于实现蒸汽轮机的控制控制的方法和系统，其中第一级喷嘴的蒸汽室被分成多个蒸汽隔间，各自连接到一个蒸汽隔间的控制阀被单独操作以控制蒸汽的流量 引入涡轮机，并且通过根据负载调节蒸汽的流量来实现喷嘴的调节。 在低负载下，控制阀的开度保持恒定，并且通过减小涡轮入口处的蒸汽的压力使涡轮由减压蒸汽驱动，以便在低负荷区域中保持， 高负荷区域的蒸汽体积流量。 为了应对负载值的变化，对于每个控制阀，预先设定对应于负载值的预定变化的开度。 当负载值的变化小于负载值的预定变化时，调节所涉及的控制阀的开度。 相反，当负载值的变化大于负载值的预定变化时，控制涡轮入口处的蒸汽的压力。
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公开(公告)号：US09566971B2
公开(公告)日：2017-02-14
申请号：US14125752
申请日：2011-10-25
申请人： Takahiro Okano , Yusuke Kamiya , Kiyoyuki Uchida , Akira Sakai , Hiroshi Ueno , Masaaki Uechi
发明人： Takahiro Okano , Yusuke Kamiya , Kiyoyuki Uchida , Akira Sakai , Hiroshi Ueno , Masaaki Uechi
CPC分类号： B60T17/22 , B60T7/042 , B60T8/885 , B60T11/16 , B60T11/20 , B60T13/146 , B60T13/585 , B60T17/221
摘要： In a hydraulic brake system including a cylinder device that includes a front chamber and a rear chamber located on front and rear sides of a pressurizing piston, respectively, presence or absence of liquid leakage from a brake line is detected based on a hydraulic pressure in the rear chamber. Where a state in which a subtraction value obtained by subtracting an actual rear hydraulic pressure from a target rear hydraulic pressure is larger than a first malfunction determination threshold value has continued for a time not shorter than a first malfunction determination time, and then an increase of the actual rear hydraulic pressure at a rate not lower than a set rate has caused the subtraction value to become smaller than a return determination threshold value, it is determined that the pressurizing piston has been bottomed due to liquid leakage from the front chamber.
摘要翻译： 在包括气缸装置的液压制动系统中，分别包括位于加压活塞的前后侧的前室和后室，基于所述制动管中的液压检测是否存在来自制动管路的液体泄漏 后室。 在通过从目标后方液压减去实际后方液压而得到的减法值大于第一故障判定阈值的状态下，持续不到第一故障判定时间的时间，然后增加 以不低于设定速率的速度的实际后部液压使得减法值变得小于返回判定阈值，则由于前室的液体泄漏，判断为加压活塞已经底部。
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