公开(公告)号：US10470290B2

公开(公告)日：2019-11-05

申请号：US15589153

申请日：2017-05-08

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlin ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K3/30 ,  H05K7/20 ,  H01L23/00 ,  C09K5/00 ,  C09K5/06 ,  H05K1/02 ,  H05K1/18 ,  H05K3/34

Abstract: An apparatus is configured with a component having a coating comprising a material in a first phase (e.g., solid and/or liquid phase) with a transition temperature. The component is mechanically and/or electrically attached to a substrate. Exposure of the coating to a temperature that meets or exceeds the transition temperature causes the material to undergo a phase change. The phase change of the material alters the position of the component, including separation of the component from the substrate. The separation disrupts the attachment, thereby mitigating damage to the substrate and/or component.

公开(公告)号：US20180324946A1

公开(公告)日：2018-11-08

申请号：US15805995

申请日：2017-11-07

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlin ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K1/02 ,  H05K3/28 ,  H05K1/18

CPC classification number: H05K1/0293 ,  H05K1/0201 ,  H05K1/181 ,  H05K3/28 ,  H05K2203/176

Abstract: A component having a coating comprising a material in a first phase (e.g., solid and/or liquid phase) with a transition temperature. The component is mechanically and/or electrically attached to a substrate. Exposure of the coating to a temperature that meets or exceeds the transition temperature causes the material to undergo a phase change. The phase change of the material alters the position of the component, including separation of the component from the substrate. The separation disrupts the attachment, thereby mitigating damage to the substrate and/or component.

公开(公告)号：US20180324944A1

公开(公告)日：2018-11-08

申请号：US15589153

申请日：2017-05-08

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlin ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K1/02 ,  H05K3/28 ,  H05K1/18

CPC classification number: H05K1/0201 ,  H05K1/181 ,  H05K3/3431 ,  H05K2201/10575 ,  H05K2203/175 ,  H05K2203/176

Abstract: An apparatus is configured with a component having a coating comprising a material in a first phase (e.g., solid and/or liquid phase) with a transition temperature. The component is mechanically and/or electrically attached to a substrate. Exposure of the coating to a temperature that meets or exceeds the transition temperature causes the material to undergo a phase change. The phase change of the material alters the position of the component, including separation of the component from the substrate. The separation disrupts the attachment, thereby mitigating damage to the substrate and/or component.

公开(公告)号：US20180061800A1

公开(公告)日：2018-03-01

申请号：US15794192

申请日：2017-10-26

Applicant: International Business Machines Corporation

Inventor： Anson J. Call ,  Vijayeshwar D. Khanna ,  David J. Russell ,  Krishna R. Tunga

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L24/17 ,  H01L21/4853 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2224/17133 ,  H01L2924/3512

Abstract: An electrical contact upon an interposer and/or upon a processing device includes a minor axis and a major axis. The contact is positioned such that the major axis is generally aligned with the direction of expansion of the interposer and/or the processing device. The electrical contact may further be positioned within a power/ground or input/output (I/O) region of the interposer and/or processing device. The electrical contact may further be positioned within a center region that is surrounded by a perimeter region of the interposer and/or the processing device. The dimensions or aspect ratios of major and minor axes of neighboring electrical contacts within an electrical contact grid may differ relative thereto. Further, the angle of respective major and minor axes of neighboring electrical contacts within the electrical contact grid may differ relative thereto.

公开(公告)号：US20170148749A1

公开(公告)日：2017-05-25

申请号：US15426083

申请日：2017-02-07

Applicant: International Business Machines Corporation

Inventor： Mark C. Lamorey ,  Shidong Li ,  Janak G. Patel ,  Douglas O. Powell ,  David J. Russell ,  Peter Slota, JR. ,  David B. Stone

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/04 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/4846 ,  H01L21/4857 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/10 ,  Y10T29/49155 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laminate structure includes a conductive layer and a dielectric layer in contact with the conductive layer, the dielectric layer comprises a selectively patterned high-modulus dielectric material that balances a differential stress between the conductive layer and the dielectric layer to mechanically stiffen the laminate structure and reduce warpage.

公开(公告)号：US09478453B2

公开(公告)日：2016-10-25

申请号：US14488496

申请日：2014-09-17

Applicant: International Business Machines Corporation

Inventor： Richard S. Graf ,  Douglas O. Powell ,  David J. Russell ,  David J. West

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  H01L21/304 ,  H01L21/67 ,  H01L23/544

CPC classification number: H01L21/6835 ,  H01L21/2686 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Mechanisms are provided for sacrificial carrier dicing of semiconductor wafers. A bottom layer of a semiconductor wafer is bonded to a top layer of a sacrificial carrier. The semiconductor wafer is diced into a set of chips, such that the dicing cuts through the semiconductor wafer and into the sacrificial carrier and such that the sacrificial carrier dresses a diamond blade of a saw so as to expose one or more new, sharp layers of diamonds on the diamond blade.

Abstract translation: 提供用于半导体晶片的牺牲载体切割的机构。 将半导体晶片的底层结合到牺牲载体的顶层。 半导体晶片被切割成一组芯片，使得切割切割穿过半导体晶片并进入牺牲载体，并且使得牺牲载体连接锯的金刚石刀片，以便暴露一个或多个新的尖锐的层 金刚石刀片上的钻石。

公开(公告)号：US20160126201A1

公开(公告)日：2016-05-05

申请号：US14532764

申请日：2014-11-04

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  Sarah H. Knickerbocker ,  Karen P. McLaughlin ,  David J. Russell

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/1181 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/94 ,  H01L2924/381 ,  H01L2924/01074 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/1146

Abstract: A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.

Abstract translation: 半导体结构包括利用多材料沟槽层制造的接触。 多材料沟槽层用于形成接触沟槽，并且接触沟槽用于在其中形成接触。 沟槽层包括下阻挡沟槽层和上光电处理层。 光刻处理层采用图案形成接触沟槽。 阻挡层保护用于形成接触的电镀导电层免受在去除光处理层期间可能发生的腐蚀。

公开(公告)号：US20160079117A1

公开(公告)日：2016-03-17

申请号：US14488496

申请日：2014-09-17

Applicant: International Business Machines Corporation

Inventor： Richard S. Graf ,  Douglas O. Powell ,  David J. Russell ,  David J. West

IPC: H01L21/78 ,  H01L23/544 ,  H01L21/683 ,  H01L21/67 ,  H01L21/304 ,  H01L21/268

CPC classification number: H01L21/6835 ,  H01L21/2686 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Mechanisms are provided for sacrificial carrier dicing of semiconductor wafers. A bottom layer of a semiconductor wafer is bonded to a top layer of a sacrificial carrier. The semiconductor wafer is diced into a set of chips, such that the dicing cuts through the semiconductor wafer and into the sacrificial carrier and such that the sacrificial carrier dresses a diamond blade of a saw so as to expose one or more new, sharp layers of diamonds on the diamond blade.

公开(公告)号：US09142501B2

公开(公告)日：2015-09-22

申请号：US14447908

申请日：2014-07-31

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Minhua Lu ,  Eric D. Perfecto ,  David J. Russell ,  Wolfgang Sauter ,  Krystyna Semkow ,  Thomas A. Wassick

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L23/498 ,  H01L21/768 ,  H05K1/09 ,  H05K3/40 ,  H05K3/34

CPC classification number: H01L23/49816 ,  H01L21/76843 ,  H01L21/76885 ,  H01L23/49866 ,  H01L2224/11 ,  H05K1/09 ,  H05K3/3478 ,  H05K3/4007 ,  H05K2201/0338 ,  H05K2201/0341 ,  H05K2201/0344 ,  H05K2201/09745 ,  H05K2203/041

Abstract: An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.

Abstract translation: 一种互连结构，其包括其中存在电气部件的基板以及与接触焊盘接触的凸起下冶金（UBM）堆叠，所述凸块冶金（UBM）堆叠存在于所述基板中的所述电气部件。 UBM堆叠包括与接触焊盘直接接触电气部件的金属粘合层，与金属粘附层层直接接触的铜（Cu）种子层，第一镍（Ni）阻挡层， 存在于铜（Cu）种子层的直接接触中，以及存在于第一镍（Ni）阻挡层上的至少一个铜（Cu）导体层和至少一个第二镍（Ni）阻挡层的层状结构。 第二镍（Ni）阻挡层上可能存在焊球。