Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures

    公开(公告)号:US10850973B2

    公开(公告)日:2020-12-01

    申请号:US16698535

    申请日:2019-11-27

    申请人: INVENSENSE, INC.

    IPC分类号: B81B7/02 B81C1/00

    摘要: A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity in the handle wafer. Four methods are described to create two or more enclosures having multiple gas pressure or compositions on a single substrate including, each enclosure containing a moveable portion. The methods include: A. Forming a secondary sealed enclosure, B. Creating multiple ambient enclosures during wafer bonding, C. Creating and breaching an internal gas reservoir, and D. Forming and subsequently sealing a controlled leak/breach into the enclosure.

    Gas sensing device with chemical and thermal conductivity sensing

    公开(公告)号:US10598621B2

    公开(公告)日:2020-03-24

    申请号:US15484864

    申请日:2017-04-11

    申请人: INVENSENSE, INC.

    摘要: The present invention relates to systems and methods for detecting gases in an environment using chemical and thermal sensing. In one embodiment, a method includes exposing a chemiresistor embedded within a sensor pixel to a gas in an environment; setting a heater embedded within the sensor pixel to a sensing temperature, the sensing temperature being greater than room temperature; measuring an electrical resistance of the chemiresistor in response to setting the heater to the sensing temperature; and in response to a difference between the electrical resistance of the chemiresistor and a reference electrical resistance being less than a threshold, supplying a fixed power input to the heater embedded within the sensor pixel and measuring a temperature of the sensor pixel relative to a reference temperature.

    CMOS-MEMS integrated device including multiple cavities at different controlled pressures and methods of manufacture

    公开(公告)号:US10221065B2

    公开(公告)日:2019-03-05

    申请号:US15461270

    申请日:2017-03-16

    申请人: INVENSENSE, INC.

    摘要: An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

    MEMS device and process for RF and low resistance applications

    公开(公告)号:US10160635B2

    公开(公告)日:2018-12-25

    申请号:US15477202

    申请日:2017-04-03

    申请人: INVENSENSE, INC.

    IPC分类号: H01L29/84 B81B3/00 B81C3/00

    摘要: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    GAS SENSING METHOD AND DEVICE
    35.
    发明申请

    公开(公告)号:US20180292338A1

    公开(公告)日:2018-10-11

    申请号:US15484864

    申请日:2017-04-11

    申请人: INVENSENSE, INC.

    IPC分类号: G01N27/04 G01N33/00

    摘要: The present invention relates to systems and methods for detecting gases in an environment using chemical and thermal sensing. In one embodiment, a method includes exposing a chemiresistor embedded within a sensor pixel to a gas in an environment; setting a heater embedded within the sensor pixel to a sensing temperature, the sensing temperature being greater than room temperature; measuring an electrical resistance of the chemiresistor in response to setting the heater to the sensing temperature; and in response to a difference between the electrical resistance of the chemiresistor and a reference electrical resistance being less than a threshold, supplying a fixed power input to the heater embedded within the sensor pixel and measuring a temperature of the sensor pixel relative to a reference temperature.