公开(公告)号：US5463901A

公开(公告)日：1995-11-07

申请号：US283251

申请日：1994-07-29

申请人： Akihiro Hachigo ,  Hideaki Nakahata ,  Shinichi Shikata ,  Naoji Fujimori

发明人： Akihiro Hachigo ,  Hideaki Nakahata ,  Shinichi Shikata ,  Naoji Fujimori

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  G01L9/00 ,  H04R31/00

CPC分类号： H03H9/02574 ,  Y10T29/49005

摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).

摘要翻译： 相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。 这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b） 。 叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

公开(公告)号：US5390401A

公开(公告)日：1995-02-21

申请号：US103729

申请日：1993-08-06

申请人： Shinichi Shikata ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Naoji Fujimori

发明人： Shinichi Shikata ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Naoji Fujimori

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/25 ,  H01L41/22

CPC分类号： H03H9/02574 ,  H03H3/08 ,  H03H9/1092 ,  Y10T29/42

摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).

摘要翻译： 表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。 表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。 位于一对叉指电极（2a，2b）之间的部分传播表面声波。 该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。 空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

公开(公告)号：US08349078B2

公开(公告)日：2013-01-08

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： C30B25/20 ,  C30B25/22 ,  C30B29/40 ,  H01L21/306

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US20110133207A1

公开(公告)日：2011-06-09

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底（1）是以下之一：III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且硅原子数 每平方厘米的表面（3）不大于3×1013; III族氮化物衬底，其中每平方厘米表面（3）的硅原子数不大于3×1013，并且表面（3）的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且表面（3）的雾度水平不大于5ppm。

公开(公告)号：US07901960B2

公开(公告)日：2011-03-08

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US07569493B2

公开(公告)日：2009-08-04

申请号：US11435129

申请日：2006-05-17

申请人： Akihiro Hachigo ,  Takayuki Nishiura

发明人： Akihiro Hachigo ,  Takayuki Nishiura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02052

摘要： There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.

摘要翻译： 提供一种清除方法和制造方法，其抑制在化合物半导体的表面上的杂质，微粒等杂质的附着。 根据本发明的清洗氮化物基化合物半导体的方法包括以下步骤：制备氮化物基化合物半导体（或基板制备步骤）; 和清洁。 在清洗步骤中，使用pH为7.1以上的清洗液清洗氮化物系化合物半导体。

公开(公告)号：US20080044338A1

公开(公告)日：2008-02-21

申请号：US11907322

申请日：2007-10-11

申请人： Akihiro Hachigo ,  Takayuki Nishiura

发明人： Akihiro Hachigo ,  Takayuki Nishiura

IPC分类号： C01B21/06

CPC分类号： G01N21/9501 ,  G01N21/6489

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.

摘要翻译： 一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光致发光的测定的工序; 在通过光致发光测定得到的发光光谱中，使用在与化合物半导体部件的带隙对应的波长下的峰值的半值宽度来评价化合物半导体部件的表面的损伤的工序。

公开(公告)号：US20060292832A1

公开(公告)日：2006-12-28

申请号：US11472417

申请日：2006-06-22

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

IPC分类号： H01L21/00

CPC分类号： H01L21/3043 ,  B23H7/02 ,  B23H9/00

摘要： In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.

摘要翻译： 在加工晶体的方法中，当氮化物半导体晶体被加工时，在氮化物半导体晶体和工具电极之间施加电压以进行放电，从而通过放电产生的局部热来部分去除和加工晶体 。

公开(公告)号：US06642813B1

公开(公告)日：2003-11-04

申请号：US10089816

申请日：2002-04-04

申请人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Satoshi Fujii ,  Hideaki Nakahata ,  Shinichi Shikata

发明人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Satoshi Fujii ,  Hideaki Nakahata ,  Shinichi Shikata

IPC分类号： H03H964

CPC分类号： H03H9/02582

摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.

摘要翻译： 具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。 利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。

公开(公告)号：US5646468A

公开(公告)日：1997-07-08

申请号：US660902

申请日：1996-06-07

申请人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

发明人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/00 ,  H01L41/08

CPC分类号： H03H9/02582

摘要： The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.

摘要翻译： 本发明涉及一种包括金刚石层和LiTaO 3层的SAW器件，其可以以3GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。 根据本发明的波长λ（μm）的第一模式表面声波的SAW器件包括：金刚石层，形成在金刚石层上的叉指换能器，以及形成在该金刚石层上的多晶C轴取向的LiTaO 3层 叉指换能器 其中所述SAW器件满足0.4≤kh1≤1.2的关系，其中参数kh1被定义为kh1 =2π（t1 /λ），并且t1（μm）是LiTaO3层的厚度。