利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.031 秒)

    Silicon carbide thyristor
    32.
    发明授权
    Silicon carbide thyristor 失效
    碳化硅晶闸管

    公开(公告)号：US5539217A

    公开(公告)日：1996-07-23

    申请号：US103866

    申请日：1993-08-09

    申请人： John A. Edmond ,  John W. Palmour

    发明人： John A. Edmond ,  John W. Palmour

    IPC分类号： H01L29/744 ,  H01L29/24 ,  H01L29/74 ,  H01L31/0312 ,  H01L31/111

    CPC分类号： H01L29/1608 ,  H01L29/74

    摘要： The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

    摘要翻译： SiC晶闸管具有衬底，阳极，漂移区，栅极和阴极。 衬底，阳极，漂移区，栅极和阴极各自优选由碳化硅形成。 基板由具有一种导电类型的碳化硅形成，并且根据实施例，阳极或阴极与基板相邻地形成并且具有与基板相同的导电类型。 邻近阳极或阴极形成碳化硅的漂移区，并且具有与阳极或阴极相反的导电类型。 根据实施例，也形成在漂移区域或阴极附近的栅极，并且具有与漂移区域或阴极相反的导电类型。 再次取决于实施例的阳极或阴极形成在栅极或漂移区域附近并且具有与栅极相反的导电类型。

    Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
    33.
    发明授权
    Vertical geometry light emitting diode with group III nitride active layer and extended lifetime 失效
    具有III族氮化物活性层的垂直几何型发光二极管和延长的使用寿命

    公开(公告)号：US5523589A

    公开(公告)日：1996-06-04

    申请号：US309251

    申请日：1994-09-20

    申请人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong ,  Vladimir Dmitriev

    发明人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong ,  Vladimir Dmitriev

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L31/0312

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

    摘要翻译： 发光二极管发射在可见光谱的蓝色部分，其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底; 与碳化硅衬底的欧姆接触; 选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物的导电缓冲层，其中A和B是III族元素，其中x为零， 或零和1之间的分数，以及碳化硅与这种三元III族氮化物的合金; 以及包括在缓冲层上的p-n结的双异质结构，其中活性和异质结构层选自二元III族氮化物和三元III族氮化物。

    Blue light-emitting diode with high external quantum efficiency
    34.
    发明授权
    Blue light-emitting diode with high external quantum efficiency 失效
    具有高外量子效率的蓝色发光二极管

    公开(公告)号：US5416342A

    公开(公告)日：1995-05-16

    申请号：US081668

    申请日：1993-06-23

    申请人： John A. Edmond ,  Hua-Shuang Kong

    发明人： John A. Edmond ,  Hua-Shuang Kong

    IPC分类号： H01L33/02 ,  H01L33/34 ,  H01L33/40 ,  H01L33/00

    CPC分类号： H01L33/34 ,  H01L33/02 ,  H01L33/405

    摘要： A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide substrate having a first conductivity type, a first epitaxial layer of silicon carbide on the substrate and having the same conductivity type as the substrate, and a second epitaxial layer of silicon carbide on the first epitaxial layer and having the opposite conductivity type from the first layer. The first and second epitaxial layers forming a p-n junction, and the diode includes ohmic contacts for applying a potential difference across the p-n junction. The second epitaxial layer has side walls and a top surface that forms the top surface of the diode, and the second epitaxial layer has a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from the side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.

    摘要翻译： 公开了一种以高外部量子效率在可见光谱的蓝色部分中发光的发光二极管。 二极管包括具有第一导电类型的单晶碳化硅衬底，在衬底上的碳化硅的第一外延层并且具有与衬底相同的导电类型，以及在第一外延层上的第二碳化硅外延层，并且具有 与第一层相反的导电类型。 形成p-n结的第一外延层和第二外延层，二极管包括用于在p-n结上施加电位差的欧姆接触。 第二外延层具有形成二极管的顶表面的侧壁和顶表面，并且第二外延层具有足以增加由该结点发射的光将从侧壁向外辐射的立体角的厚度，但是 小于所述第二层中的内部吸收将大大减少从所述二极管的所述顶表面发射的光的厚度。

    Method of preparing silicon carbide surfaces for crystal growth
    35.
    发明授权
    Method of preparing silicon carbide surfaces for crystal growth 失效
    制备晶体生长碳化硅表面的方法

    公开(公告)号：US4946547A

    公开(公告)日：1990-08-07

    申请号：US421375

    申请日：1989-10-13

    申请人： John W. Palmour ,  Hua-Shuang Kong ,  John A. Edmond

    发明人： John W. Palmour ,  Hua-Shuang Kong ,  John A. Edmond

    IPC分类号： H01L21/205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/36 ,  H01L21/465

    CPC分类号： H01L21/02529 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/465

    摘要： The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.

    摘要翻译： 本发明是通过将基本上平坦的表面暴露于蚀刻等离子体，直到基本上除去由表面的任何机械制备引起的任何表面或地下损伤为止，在单晶碳化硅晶体上形成基本平坦的表面的方法。 然而，蚀刻被限制到比等离子体蚀刻将在表面上产生新缺陷或加剧现有蚀刻的时间段，并且在使用本身不加重或引起实质缺陷的等离子体气体和电极系统的时候 表面。

    Reflective mounting substrates for light emitting diodes
    36.
    发明授权
    Reflective mounting substrates for light emitting diodes 有权
    用于发光二极管的反光安装基板

    公开(公告)号：US09178121B2

    公开(公告)日：2015-11-03

    申请号：US11611600

    申请日：2006-12-15

    申请人： John A. Edmond ,  Hua-Shuang Kong

    发明人： John A. Edmond ,  Hua-Shuang Kong

    IPC分类号： H01L33/00 ,  H01L33/60 ,  H01L33/50

    CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

    摘要： A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.

    摘要翻译： 公开了一种发光二极管，其包括由III族氮化物材料体系形成的发光有源结构，支撑III族氮化物活性结构的接合结构，以及支撑接合结构的安装基板。 安装基板包括反射具有由有源结构发射的频率的至少50％的光的材料。

    Light emitting diodes including barrier sublayers
    37.
    发明授权
    Light emitting diodes including barrier sublayers 有权
    发光二极管包括屏障子层

    公开(公告)号：US08604502B2

    公开(公告)日：2013-12-10

    申请号：US13586642

    申请日：2012-08-15

    申请人： David B. Slater, Jr. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

    发明人： David B. Slater, Jr. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

    摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

    Method of forming green light emitting diode in silicon carbide
    39.
    发明授权
    Method of forming green light emitting diode in silicon carbide 失效
    在碳化硅中形成绿色发光二极管的方法

    公开(公告)号：US5604135A

    公开(公告)日：1997-02-18

    申请号：US290020

    申请日：1994-08-12

    申请人： John A. Edmond ,  Alexander V. Suvorov

    发明人： John A. Edmond ,  Alexander V. Suvorov

    IPC分类号： H01L33/00 ,  H01L33/16 ,  H01L33/34 ,  H01L21/24 ,  H01L21/329

    CPC分类号： H01L33/34 ,  H01L33/0054 ,  H01L33/16 ,  Y10S148/148 ,  Y10S438/931

    摘要： A light emitting diode is disclosed that emits in the green portion of the visible spectrum, along with a method of producing the diode. The light emitting diode comprises a 6H silicon carbide substrate having a planar surface inclined more than one degree off axis toward one of the directions; an ohmic contact to the substrate; a first epitaxial layer of 6H silicon carbide on the inclined surface of the substrate and having a first conductivity type; a second epitaxial layer of 6H silicon carbide on the first layer and having the opposite conductivity type for forming a p-n junction between the first and second layers; and an ohmic contact to the second epitaxial layer. The diode produces a peak wavelength of between about 525 and 535 nanometers with a spectral half width of no more than about 90 nanometers.

    摘要翻译： 公开了一种发射可见光谱的绿色部分的发光二极管以及二极管的制造方法。 发光二极管包括6H碳化硅衬底，其具有朝向<11 + E，ov2 + EE0>方向之一倾斜多于一度偏离轴的平面; 与基板的欧姆接触; 在所述衬底的倾斜表面上的第六外延层为6H碳化硅并且具有第一导电类型; 在第一层上具有6H碳化硅的第二外延层，并具有相反的导电类型，用于在第一和第二层之间形成p-n结; 和与第二外延层的欧姆接触。 二极管产生约525和535纳米之间的峰值波长，光谱半宽度不超过约90纳米。

    System and method for accelerated degradation testing of semiconductor devices
    40.
    发明授权
    System and method for accelerated degradation testing of semiconductor devices 失效
    半导体器件加速退化试验的系统和方法

    公开(公告)号：US5381103A

    公开(公告)日：1995-01-10

    申请号：US959714

    申请日：1992-10-13

    申请人： John A. Edmond ,  Douglas A. Asbury ,  Calvin H. Carter, Jr. ,  Douglas G. Waltz

    发明人： John A. Edmond ,  Douglas A. Asbury ,  Calvin H. Carter, Jr. ,  Douglas G. Waltz

    IPC分类号： G01R31/26 ,  H01L21/66 ,  G01R1/04

    CPC分类号： G01R31/2642 ,  G01R31/2635

    摘要： A method of testing a semiconductor device, having the steps of pulsing the semiconductor device with a predetermined level of current for a duration of time so as to cause inadequate parts to degrade and to cause adequate parts to stabilize, and measuring predetermined electrical or optical performance characteristics for the semiconductor device after the current pulse. A system for testing a semiconductor device on a wafer is also provided having a contact probe for applying current pulses to the semiconductor device on the wafer, measuring means electrically connected to the probe for measuring predetermined electrical or optical performance characteristics of the semiconductor device on the wafer, and optical detection means electrically connected to the measuring means for detecting radiation emitted from the semiconductor device on the wafer.

    摘要翻译： 一种测试半导体器件的方法，该方法具有如下步骤：使半导体器件以预定电流电流脉冲持续一段时间，从而导致不适当的部件劣化并导致足够的部件稳定，以及测量预定的电或光学性能 电流脉冲后半导体器件的特性。 还提供了一种用于在晶片上测试半导体器件的系统，其具有用于向晶片上的半导体器件施加电流脉冲的接触探针，电连接到探针的测量装置，用于测量半导体器件上的预定的电或光学性能特性 晶片和光学检测装置，电连接到测量装置，用于检测从晶片上的半导体器件发射的辐射。