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公开(公告)号：US07863631B2
公开(公告)日：2011-01-04
申请号：US12433106
申请日：2009-04-30
IPC分类号： H01L33/00 , H01L29/221 , H01L29/225
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。
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32.发明授权III-nitride light emitting device with reduced strain light emitting layer 有权具有减小的应变发光层的III族氮化物发光器件公开(公告)号：US07663148B2
公开(公告)日：2010-02-16
申请号：US11615479
申请日：2006-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
摘要翻译： 根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。 应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。 在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。 在本发明的一些实施例中，应变消除层是半导体材料的一组柱。
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公开(公告)号：US07544525B2
公开(公告)日：2009-06-09
申请号：US11672003
申请日：2007-02-06
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。
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34.发明授权Reverse polarization light emitting region for a semiconductor light emitting device 有权用于半导体发光器件的反向偏振发光区域公开(公告)号：US07221000B2
公开(公告)日：2007-05-22
申请号：US11226185
申请日：2005-09-13
IPC分类号： H01L29/22
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。 发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。
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公开(公告)号：US07087941B2
公开(公告)日：2006-08-08
申请号：US10011521
申请日：2001-11-05
申请人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
发明人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
IPC分类号： H01L31/72
CPC分类号： H01L33/30 , H01L33/02 , H01L33/305
摘要： The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
摘要翻译： 通过使吸收装置层尽可能薄，可以提高发光装置的提取效率。 内部量子效率随着器件层变薄而减小。 最佳活性层厚度平衡两种效果。 AlGaInP LED包括基板和包括第一导电类型的AlGaInP下约束层，第二导电类型的AlGaInP有源区和第二导电类型的AlGaInP上约束层的器件层。 有源区的吸光度是发光器件中总吸光度的至少五分之一。 该装置可选地包括至少一个插入限制层和活性区域中的一个AlGaInP的后置层。 可以用氧掺杂p型上约束层提高可靠性。
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公开(公告)号：US08334155B2
公开(公告)日：2012-12-18
申请号：US11237164
申请日：2005-09-27
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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公开(公告)号：US20120214291A1
公开(公告)日：2012-08-23
申请号：US13458587
申请日：2012-04-27
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。
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38.发明申请公开(公告)号：US20110180911A1
公开(公告)日：2011-07-28
申请号：US13081788
申请日：2011-04-07
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译： 本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。 所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。 通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。 本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。
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39.发明申请III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMMITTING REGION 有权具有双重结构光照射区域的III型氮化物发光装置公开(公告)号：US20090261361A1
公开(公告)日：2009-10-22
申请号：US12495464
申请日：2009-06-30
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。
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40.发明申请公开(公告)号：US20080149942A1
公开(公告)日：2008-06-26
申请号：US11615479
申请日：2006-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
摘要翻译： 根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。 应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。 在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。 在本发明的一些实施例中，应变消除层是半导体材料的一组柱。
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