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公开(公告)号：US06741781B2
公开(公告)日：2004-05-25
申请号：US09961372
申请日：2001-09-25
申请人： Hideto Furuyama
发明人： Hideto Furuyama
IPC分类号： G02B610
CPC分类号： G02B6/125 , G02B6/42 , G02B6/4214 , G02B6/43 , G02B2006/12069 , G02B2006/12104 , G02B2006/12176
摘要： In an optical connection board, a first clad layer is formed on a flat surface of a substrate and a core layer is formed on the first clad layer and is extended in a propagation direction of an optical signal. The core layer is covered with a second clad layer. A termination mirror having a reflection face is so buried in the clad layer as to reflect the optical signal guided in the core layer, to the outside of the optical connection board.
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公开(公告)号：US06449296B1
公开(公告)日：2002-09-10
申请号：US09606014
申请日：2000-06-29
申请人： Hiroshi Hamasaki , Hideto Furuyama
发明人： Hiroshi Hamasaki , Hideto Furuyama
IPC分类号： H01S5022
CPC分类号： H01S5/02292 , H01S5/02248 , H01S5/02276 , H01S5/0683
摘要： A semiconductor laser device including a mounting body having a step including an upper level, a lower level and an inclined plane provided between the upper and lower levels; and a semiconductor laser element mounted on the lower level, the mounting body further having a pin-type photodiode including a region of a first conduction type, and i-type region and a region of a second conduction type, a portion of laser beam emitted from the laser element being reflected by the inclined plan and output therefrom, a reminder of the laser beam emitted from the laser element being incident into the mounting body through the inclined plane and detected by the photodiode, the i-type region of the photodiode being provided on the inclined plane so that a major part of the remainder of the laser beam can enter the i-type region without passing the region of a first conduction type and the region of a second conduction type of the photodiode.
摘要翻译： 一种半导体激光装置，包括具有台阶的安装体，所述台阶包括设置在所述上下层之间的上层，下层和倾斜面; 以及安装在下层的半导体激光元件，所述安装体还具有包括第一导电类型的区域的pin型光电二极管，以及i型区域和第二导电类型的区域，发射的激光束的一部分 从激光元件被倾斜平面反射并从其输出，从激光元件发射的激光束通过倾斜平面入射到安装体中并被光电二极管检测到，光电二极管的i型区域 设置在倾斜平面上，使得激光束的剩余部分的大部分可以进入i型区域而不通过第一导电类型的区域和第二导电类型的光电二极管的区域。
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公开(公告)号：US5412748A
公开(公告)日：1995-05-02
申请号：US160919
申请日：1993-12-03
CPC分类号： G02B6/3839 , G02B6/4231 , G02B6/4238 , G02B6/4248 , G02B6/4249 , G02B6/3838 , G02B6/4232
摘要： An optical semiconductor module includes a submount body having a groove buried with an insulator, an optical semiconductor device mounted on the submount body, a cap, arranged across the groove on the submount body and bonded and fixed to the submount body by a bonding member, for hermetically sealing the optical semiconductor device, and an electrical wiring layer arranged to extend from the outside of the cap on the submount body to the inside of the cap through the groove buried with the insulator. The electrical wiring layer is electrically connected to the optical semiconductor device.
摘要翻译： 一种光半导体模块，包括：具有埋置有绝缘体的沟槽的基座主体，安装在所述基座主体上的光学半导体装置，盖子，布置在所述基座主体上的所述槽上，并且通过接合构件粘合固定到所述基座主体， 用于气密地密封光学半导体器件;以及电布线层，其布置成通过所述绝缘体埋入的沟槽从所述底座主体上的盖的外部延伸到所述盖的内部。 电配线层与光半导体装置电连接。
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公开(公告)号：US5343054A
公开(公告)日：1994-08-30
申请号：US120410
申请日：1993-09-14
IPC分类号： H01L31/0352 , H01L31/11 , H01L27/14
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1105
摘要： According to this invention, a phototransistor includes an n-type InP emitter layer formed on an n.sup.+ -type InP substrate, a p.sup.- -type InGaAsP base layer, and a light-absorbing n.sup.- -type InGaAsP collector layer. An undoped InGaAs multiple quantum well layer is interposed between the emitter and base layers. An emitter electrode is in contact with the substrate, and a collector electrode is in contact with an n.sup.+ -type InP cap layer for covering the collector layer. A reverse bias voltage is applied across the emitter and collector electrodes. The rate at which electrons injected from the emitter layer to the quantum well layer and holes injected from the collector layer to the quantum well layer are combined with each other and disappear in a state wherein detection light is not incident is higher than that in a state wherein the detection light is incident. For this reason, a digital output signal can be directly obtained from the transistor action of this invention.
摘要翻译： 根据本发明，光电晶体管包括形成在n +型InP衬底，p型InGaAsP基极层和吸光n型InGaAsP集电极层上的n型InP发射极层。 在发射极和基极层之间插入未掺杂的InGaAs多量子阱层。 发射电极与衬底接触，集电极与n +型InP覆盖层接触，用于覆盖集电极层。 反射偏压施加在发射极和集电极两端。 从发射极向量子阱层注入的电子和从集电极层向量子阱层注入的空穴的速度彼此组合，并且在不入射检测光的状态下消失的速率高于状态 其中检测光入射。 为此，可以从本发明的晶体管动作直接获得数字输出信号。
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公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。
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公开(公告)号：US08957402B2
公开(公告)日：2015-02-17
申请号：US13597096
申请日：2012-08-28
IPC分类号： H01L29/06
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括第一氮化物半导体层，氮化物半导体发光层，第二氮化物半导体层，p侧电极和n侧电极。 氮化物半导体发光层设置在第一氮化物半导体层的第二面的p侧区域上。 第二氮化物半导体层设置在氮化物半导体发光层上。 p侧电极设置在第二氮化物半导体层上。 n侧电极设置在第一氮化物半导体层的第二面的n侧区域上。 氮化物半导体发光层在第一氮化物半导体层的一侧具有第一凹凸面，在第二氮化物半导体层的侧面具有第二凹凸面。
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公开(公告)号：US08907357B2
公开(公告)日：2014-12-09
申请号：US13597055
申请日：2012-08-28
IPC分类号： H01L29/18
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译： 根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。 透明层设置在安装面上的多个发光芯片和发光芯片之间。 透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。 散射剂具有与第一透明体的折射率不同的折射率。 荧光体层设置在透明层上。 发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。
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公开(公告)号：US20130285011A1
公开(公告)日：2013-10-31
申请号：US13597096
申请日：2012-08-28
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.
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公开(公告)号：US20130064511A1
公开(公告)日：2013-03-14
申请号：US13552082
申请日：2012-07-18
CPC分类号： G02B6/4202 , G02B6/423 , G02B6/4239 , G02B6/424 , G02B6/4245 , G02B6/4249 , G02B6/4274 , Y10T29/49895
摘要： According to one embodiment, an optical module includes an optical fiber, a ferrule which has a guide hole, a planar photonic device which is mounted on the ferrule, and a sleeve which includes a holding part for holding the optical fiber and a bumping part for making contact with one end of the ferrule and to which the optical fiber and the ferrule are fixed. The optical fiber is fixed to the sleeve in such a manner that the optical fiber protrudes from one end of the sleeve and has an end face formed using one end of the sleeve as a reference. The optical fiber with the formed end face is inserted in the guide hole in the ferrule and the ferrule is fixed to the sleeve with one end of the ferrule in contact with the bumping part of the sleeve.
摘要翻译： 根据一个实施例，光学模块包括光纤，具有引导孔的套圈，安装在套圈上的平面光子装置和包括用于保持光纤的保持部分的套筒和用于保持光纤的凸起部分 与套圈的一端接触，并且固定有光纤和套圈。 光纤以这样的方式固定到套筒上，使得光纤从套筒的一端突出并且具有使用套筒的一端形成的端面作为参考。 具有形成的端面的光纤插入到套圈的引导孔中，并且套圈固定到套筒，套管的一端与套筒的凸起部分接触。
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公开(公告)号：US20130032381A1
公开(公告)日：2013-02-07
申请号：US13305843
申请日：2011-11-29
申请人： Kohei Hiyama , Hiroshi Uemura , Hideto Furuyama
发明人： Kohei Hiyama , Hiroshi Uemura , Hideto Furuyama
IPC分类号： H05K1/02
CPC分类号： H05K1/028 , H05K2201/052 , H05K2201/055 , H05K2203/0228
摘要： According to one embodiment, a flexible wiring module includes a flexible wiring board which comprises electric wiring lines and an insulating layer that covers the surfaces of the electric wiring lines and which has a pair of end areas separate from each other in a wiring length direction and a wiring area sandwiched between the end areas. At least one through slit is made in the wiring area so as to connect the end areas, thereby dividing the wiring area into wiring fins. A stacked part where at least a part of the wiring fins are stacked in a thickness direction of the wiring fins is bundled together with a conductive band to form a wire-bundle area. In the wire-bundle area, the electric wiring line of at least one of the wiring fins is exposed and direct contact with the band.
摘要翻译： 根据一个实施例，柔性布线模块包括柔性布线板，其包括电布线和覆盖电布线表面的绝缘层，并且在布线长度方向具有彼此分离的一对端部区域， 一个夹在末端区域之间的接线区域。 在布线区域中形成至少一个通缝，以便连接端部区域，从而将布线区域分成布线片。 布线翅片的至少一部分沿着布线翅片的厚度方向堆叠的堆叠部分与导电带捆绑在一起以形成线束区域。 在线束区域中，至少一个布线翅片的电布线露出并与带直接接触。
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