公开(公告)号：US20080217629A1

公开(公告)日：2008-09-11

申请号：US12088999

申请日：2006-11-28

申请人： Jae Ho Lee ,  Yeo Jin Yoon

发明人： Jae Ho Lee ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48

摘要： Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.

摘要翻译： 公开了具有改进的透明电极结构的AC发光二极管。 发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及 插入在第一和第二导电类型半导体层之间的有源层。 透明电极结构位于每个发光单元上。 透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。 同时，电线电连接相邻的两个发光单元。 因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。 此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

公开(公告)号：US08987772B2

公开(公告)日：2015-03-24

申请号：US13885777

申请日：2011-02-28

申请人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang-Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

发明人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang-Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC分类号： H01L33/38 ,  H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/36 ,  H01L33/20 ,  H01L33/42

CPC分类号： H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

摘要翻译： 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

公开(公告)号：US08628983B2

公开(公告)日：2014-01-14

申请号：US13368122

申请日：2012-02-07

申请人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

发明人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

公开(公告)号：US08476648B2

公开(公告)日：2013-07-02

申请号：US11993965

申请日：2006-06-22

申请人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US08309971B2

公开(公告)日：2012-11-13

申请号：US12974917

申请日：2010-12-21

申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US08294386B2

公开(公告)日：2012-10-23

申请号：US13243802

申请日：2011-09-23

申请人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

发明人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

IPC分类号： H05B37/22

CPC分类号： H05B33/0821 ,  H01L24/37 ,  H01L24/40 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05B33/0803 ,  H05B33/0809 ,  Y02B20/348 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

摘要翻译： 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。

公开(公告)号：US08247244B2

公开(公告)日：2012-08-21

申请号：US12882449

申请日：2010-09-15

申请人： Chang Yeon Kim ,  Yeo Jin Yoon

发明人： Chang Yeon Kim ,  Yeo Jin Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L33/14

摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US07999276B2

公开(公告)日：2011-08-16

申请号：US12298238

申请日：2007-05-07

申请人： Yeo Jin Yoon

发明人： Yeo Jin Yoon

IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L33/00 ,  H01L29/24 ,  H01L31/0203 ,  H01L23/29

CPC分类号： H01L33/56 ,  H01L24/73 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.

摘要翻译： 公开了一种芯片型LED封装和具有该封装的发光装置。 芯片型LED封装包括其上形成有引线电极的导热基板。 LED芯片安装在导热基板上，下模制部分覆盖LED芯片。 此外，具有比下成形部的硬度更高的硬度的上模制部分覆盖下模制部分。 上模塑部分通过使用树脂粉末进行传递模塑而形成。 因此，由于下模塑部分可以由具有小于上模塑部分的硬度的树脂形成，所以可以提供一种芯片型LED封装，其中可以防止由于模制部分的热变形引起的器件故障 。

公开(公告)号：US07998761B2

公开(公告)日：2011-08-16

申请号：US12088902

申请日：2006-12-08

申请人： Dae Won Kim ,  Yeo Jin Yoon ,  Duck Hwan Oh ,  Jong Hwan Kim

发明人： Dae Won Kim ,  Yeo Jin Yoon ,  Duck Hwan Oh ,  Jong Hwan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

摘要翻译： 本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。 根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。 本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

公开(公告)号：US07880181B2

公开(公告)日：2011-02-01

申请号：US12123162

申请日：2008-05-19

申请人： Yeo Jin Yoon ,  Kyu Ho Lee ,  Sun Mo Kim ,  Ki Soo Joo

发明人： Yeo Jin Yoon ,  Kyu Ho Lee ,  Sun Mo Kim ,  Ki Soo Joo

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/44

摘要： Disclosed is a light emitting diode (LED) for enhancing the current spreading performance. The LED includes a plurality of contact holes exposing an N-type semiconductor layer through a P-type semiconductor layer and an active layer, and a connection pattern electrically connecting exposed portions of the N-type semiconductor layer through the contact holes, thereby enhancing current spreading in the N-type semiconductor layer. In addition, disclosed is an LED including a plurality of light emitting cells spaced apart from one another on an N-type semiconductor layer and an N-contact layer between the light emitting cells. A plurality of light emitting cells are employed in the LED, so that current can be spread in the LED.

摘要翻译： 公开了一种用于增强电流扩展性能的发光二极管（LED）。 LED包括通过P型半导体层和有源层露出N型半导体层的多个接触孔，以及通过接触孔电连接N型半导体层的暴露部分的连接图案，从而增强电流 在N型半导体层中扩展。 此外，公开了包括在N型半导体层上彼此间隔开的多个发光单元和发光单元之间的N接触层的LED。 在LED中采用多个发光单元，从而可以在LED中扩展电流。