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    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE
    32.
    发明申请
    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE 有权

    公开(公告)号：US20220181841A1

    公开(公告)日：2022-06-09

    申请号：US17552261

    申请日：2021-12-15

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343

    Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    34.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权

    公开(公告)号：US20220006256A1

    公开(公告)日：2022-01-06

    申请号：US17377835

    申请日：2021-07-16

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

    METHOD OF MANUFACTURE FOR AN ULTRAVIOLET EMITTING OPTOELECTRONIC DEVICE
    37.
    发明申请
    METHOD OF MANUFACTURE FOR AN ULTRAVIOLET EMITTING OPTOELECTRONIC DEVICE 有权

    公开(公告)号：US20210273415A1

    公开(公告)日：2021-09-02

    申请号：US17320856

    申请日：2021-05-14

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring

    IPC: H01S5/343 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22 ,  H01S5/042 ,  H01S5/0234

    Abstract: Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

    MANUFACTURABLE DEVICES FORMED ON GALLIUM AND NITROGEN MATERIAL
    38.
    发明申请
    MANUFACTURABLE DEVICES FORMED ON GALLIUM AND NITROGEN MATERIAL 有权

    公开(公告)号：US20250070536A1

    公开(公告)日：2025-02-27

    申请号：US18827332

    申请日：2024-09-06

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

    IPC: H01S5/343 ,  H01S5/00 ,  H01S5/02 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/40

    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

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