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48 条记录 (耗时 0.027 秒)

    Electro-Mechanical Switches and Methods of Use Thereof
    31.
    发明申请
    Electro-Mechanical Switches and Methods of Use Thereof 有权
    机电开关及其使用方法

    公开(公告)号：US20100073016A1

    公开(公告)日：2010-03-25

    申请号：US12507283

    申请日：2009-07-22

    申请人： William J. Arora ,  Karen K. Gleason ,  George Barbastathis ,  Wyatt E. Tenhaeff

    发明人： William J. Arora ,  Karen K. Gleason ,  George Barbastathis ,  Wyatt E. Tenhaeff

    IPC分类号： G01R27/08 ,  H01B5/00

    CPC分类号： G01N33/0057 ,  G01N27/128 ,  Y10T436/147777 ,  Y10T436/163333 ,  Y10T436/173076 ,  Y10T436/173845

    摘要： One aspect of the invention relates to an ultrathin micro-electromechanical chemical sensing device which uses swelling or straining of a reactive organic material for sensing. In certain embodiments, the device comprises a contact on-off switch chemical sensor. For example, the device can comprises a small gap separating two electrodes, wherein the gap can be closed as a result of the swelling or stressing of an organic polymer coating on one or both sides of the gap. In certain embodiments, the swelling or stressing is due to the organic polymer reacting with a target analyte.

    摘要翻译： 本发明的一个方面涉及使用用于感测的反应性有机材料的溶胀或应变的超薄微机电化学感测装置。 在某些实施例中，该装置包括接触开 - 关开关化学传感器。 例如，该装置可以包括分开两个电极的小间隙，其中间隙可以由于间隙的一侧或两侧上的有机聚合物涂层的膨胀或应力而封闭。 在某些实施方案中，溶胀或应激是由于有机聚合物与靶分析物反应。

    Chemical vapor deposition of hydrogel films
    32.
    发明授权
    Chemical vapor deposition of hydrogel films 有权
    水凝胶膜的化学气相沉积

    公开(公告)号：US07431969B2

    公开(公告)日：2008-10-07

    申请号：US11198932

    申请日：2005-08-05

    申请人： Karen K. Gleason ,  Kelvin Chan

    发明人： Karen K. Gleason ,  Kelvin Chan

    IPC分类号： C23C16/00

    CPC分类号： C09D4/00 ,  B05D1/60

    摘要： In one embodiment of the invention, iCVD is used to form linear thin films using a radical initiator and an alkene. In another embodiment, iCVD is used to form crosslinked thin films by the addition of a crosslinking agent (e.g., a diacrylate or a dimethyacrylate). The incorporation of a crosslinking agent into the thin films is shown to increase systematically with its partial pressure. In one embodiment, when the crosslinker is EDGA and the monomer is HEMA it results in crosslinked P(HEMA-co-EGDA) copolymer. In another embodiment, when the crosslinker is EDGA and the monomer is VP, it results in crosslinked P(VP-co-EGDA). Disclosed are the effects of crosslinker incorporation on the thermal and the wetting properties of the polymers. The unique swelling properties of these films are also described; certain films of the present invention are hydrogels when soaked in water.

    摘要翻译： 在本发明的一个实施方案中，iCVD用于使用自由基引发剂和烯烃形成线性薄膜。 在另一个实施方案中，iCVD用于通过加入交联剂（例如二丙烯酸酯或二甲基丙烯酸酯）形成交联的薄膜。 显示出将交联剂引入薄膜中的系统地增加其分压。 在一个实施方案中，当交联剂为EDGA且单体为HEMA时，其导致交联的P（HEMA-co-EGDA）共聚物。 在另一个实施方案中，当交联剂为EDGA且单体为VP时，其导致交联的P（VP-co-EGDA）。 公开了交联剂掺入对聚合物的热和润湿性能的影响。 还描述了这些膜的独特溶胀特性; 本发明的某些薄膜在水中浸泡时是水凝胶。

    Hydrophobicity Modulating Underwater Chemical Sensor
    35.
    发明申请
    Hydrophobicity Modulating Underwater Chemical Sensor 审中-公开
    疏水调制水下化学传感器

    公开(公告)号：US20130171738A1

    公开(公告)日：2013-07-04

    申请号：US13704934

    申请日：2011-06-17

    申请人： Hyungryul Johnny Choi ,  Ayse Asatekin Alexiou ,  Se Young Yang ,  Christy D. Petruczok ,  Karen K. Gleason ,  Nicholas M. Patrikalakis ,  George Barbastathis

    发明人： Hyungryul Johnny Choi ,  Ayse Asatekin Alexiou ,  Se Young Yang ,  Christy D. Petruczok ,  Karen K. Gleason ,  Nicholas M. Patrikalakis ,  George Barbastathis

    IPC分类号： G01N27/06

    CPC分类号： G01N27/06 ,  G01N27/3278

    摘要： A chemical sensor that works while being submerged in a highly conductive medium is described. The chemical sensor includes hydrophobic structures that are distributed on conductive electrodes and are separated by small air cavities while submerged in the conductive medium. The hydrophobic structures are arranged such that their hydrophobicity varies in response to exposure to a target analyte. The change in the level of hydrophobicity results in permeation of the conductive liquid on to the conductive electrodes, thereby reducing the resistance levels between the conductive electrodes. The sensor indicates presence of the target analyte in response to detection of a change in resistance between at least two of the conductive electrodes.

    摘要翻译： 描述了在浸没在高导电介质中时工作的化学传感器。 该化学传感器包括分布在导电电极上的疏水性结构，并且在浸没在导电介质中时被小空气腔分开。 疏水结构被布置成使得它们的疏水性随着暴露于目标分析物而变化。 疏水性水平的变化导致导电液体渗透到导电电极，从而降低导电电极之间的电阻水平。 响应于检测至少两个导电电极之间的电阻变化，传感器指示目标分析物的存在。

    Oxidative chemical vapor deposition of electrically conductive and electrochromic polymers
    38.
    发明授权
    Oxidative chemical vapor deposition of electrically conductive and electrochromic polymers 有权
    导电和电致变色聚合物的氧化化学气相沉积

    公开(公告)号：US07618680B2

    公开(公告)日：2009-11-17

    申请号：US11141353

    申请日：2005-05-31

    申请人： Karen K. Gleason ,  John Lock

    发明人： Karen K. Gleason ,  John Lock

    IPC分类号： C23C16/00

    CPC分类号： B05D1/60 ,  B05D5/12 ,  G02F2001/1515 ,  H01L51/0037

    摘要： Remarkably, disclosed herein is a solvent-less chemical vapor deposition (CVD) method for the oxidative polymerization and deposition of thin films of electrically-conducting polymers. In a preferred embodiment, the method provides poly-3,4-ethylenedioxythiophene (PEDOT) thin films. In other embodiments, the method is applicable to polymerization to give other conducting polymers, such as polyanilines, polypyrroles, polythiophenes and their derivatives. The all-vapor technique uses a moderate substrate temperature, making it compatible with a range of materials, including as fabric and paper. In addition, this method allows for the coating of high surface-area substrates with fibrous, porous and/or particulate morphologies. The coated substrates may be used in organic semiconductor devices, including organic light-emitting diodes (OLEDs), photovoltaics, electrochromics, and supercapacitors.

    摘要翻译： 值得注意的是，这里公开的是用于氧化聚合和沉积导电聚合物薄膜的无溶剂化学气相沉积（CVD）方法。 在优选的实施方案中，该方法提供了聚-3,4-亚乙基二氧噻吩（PEDOT）薄膜。 在其它实施方案中，该方法适用于聚合以产生其它导电聚合物，例如聚苯胺，聚吡咯，聚噻吩及其衍生物。 全蒸汽技术使用适度的基材温度，使其与一系列材料（包括织物和纸）兼容。 此外，该方法允许用纤维，多孔和/或颗粒形态涂覆高表面积基材。 涂覆的基材可以用于有机半导体器件，包括有机发光二极管（OLED），光伏，电致变色和超级电容器。

    Electrical device including dielectric layer formed by direct patterning process
    40.
    发明授权
    Electrical device including dielectric layer formed by direct patterning process 失效
    电气设备包括通过直接图案化工艺形成的电介质层

    公开(公告)号：US06946736B2

    公开(公告)日：2005-09-20

    申请号：US10279304

    申请日：2002-10-23

    申请人： Karen K. Gleason ,  Christopher Ober ,  Daniel Herr

    发明人： Karen K. Gleason ,  Christopher Ober ,  Daniel Herr

    IPC分类号： G03F7/16 ,  G03F7/32 ,  G03F7/36 ,  H01L23/12

    CPC分类号： G03F7/32 ,  G03F7/167 ,  G03F7/36

    摘要： Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%. Also disclosed is a microelectronic structure comprising a substrate; a plurality of transistors formed on the substrate; and a plurality of conductive features formed within a dielectric pattern, wherein the plurality of conductive features include at least one two-dimensional feature having a dimensional tolerance more precise than 7%.

    摘要翻译： 提供了一种用于在衬底上光刻图案化材料的方法，包括以下步骤：（a）通过化学气相沉积在衬底上沉积辐射敏感材料; （b）将辐射敏感材料选择性地暴露于辐射以形成图案; 和（c）使用超临界流体（SCF）作为显影剂显影图案。 还公开了通过上述方法形成的微结构。 还公开了一种用于光刻图案化衬底上的材料的方法，其中在上述步骤（a）和（b）之后，使用干等离子体蚀刻显影图案。 还公开了一种包含基底的微结构; 以及图案化的介电层，其中所述图案化的介电层包括具有比7％更精确的尺寸公差的至少一个二维特征。 还公开了包括基底的微电子结构; 形成在所述基板上的多个晶体管; 以及形成在电介质图案内的多个导电特征，其中所述多个导电特征包括具有比7％更精确的尺寸公差的至少一个二维特征。