-
31.发明申请METHOD OF CLEANING FILM FORMING APPARATUS, FILM FORMING METHOD, AND FILM FORMING APPARATUS 审中-公开清洁膜成型装置，成膜方法和成膜装置的方法公开(公告)号：US20120251723A1
公开(公告)日：2012-10-04
申请号：US13514851
申请日：2010-12-08
IPC分类号： B08B7/00 , C23C16/22 , C23C16/503
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Plasma is generated on the first condition between a cathode electrode and an anode electrode. Then, plasma is generated on the second condition different from the first condition. The second condition is for spreading plasma between the cathode electrode and the anode electrode in the outer peripheral direction as compared with the first condition. Accordingly, in addition to a deposit on the electrode, a deposit on the member provided in the vicinity of the outer periphery of the electrode can be immediately removed.
摘要翻译： 在阴极电极和阳极电极之间的第一状态下产生等离子体。 然后，在与第一条件不同的第二条件下产生等离子体。 第二个条件是与第一条件相比，在外周方向上在等离子体之间扩散阴极电极和阳极电极。 因此，除了电极上的沉积之外，可以立即除去设置在电极外周附近的部件上的沉积物。
-
公开(公告)号：US07927455B2
公开(公告)日：2011-04-19
申请号：US11252885
申请日：2005-10-19
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32009 , C23C16/24 , C23C16/5096 , H01J37/32541 , H01J37/32568 , H01L27/14692 , H01L31/18
摘要： A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power supply, and producing plasma discharges through the material gas, respectively, wherein the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another.
摘要翻译： 一种等离子体处理装置，包括可密封的可密封室，将反应性材料气体供应到室中的气体供应部分和设置在室内的多个阴极和阳极电极对，连接到外部电源，并产生等离子体 分别通过材料气体排放，其中多个阴极电极对和阳极电极对设置成彼此间隔一段距离，在该距离处等离子体放电被防止彼此干扰。
-
公开(公告)号：US20060087211A1
公开(公告)日：2006-04-27
申请号：US11252885
申请日：2005-10-19
CPC分类号： H01J37/32009 , C23C16/24 , C23C16/5096 , H01J37/32541 , H01J37/32568 , H01L27/14692 , H01L31/18
摘要： A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power supply, and producing plasma discharges through the material gas, respectively, wherein the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another.
摘要翻译： 一种等离子体处理装置，包括可密封的可密封室，将反应性材料气体供应到室中的气体供应部分和设置在室内的多个阴极和阳极电极对，连接到外部电源，并产生等离子体 分别通过材料气体排放，其中多个阴极电极对和阳极电极对设置成彼此间隔一段距离，在该距离处等离子体放电被防止彼此干扰。
-
34.发明申请公开(公告)号：US20130069193A1
公开(公告)日：2013-03-21
申请号：US13699964
申请日：2011-04-08
IPC分类号： H01L31/028 , H01L31/105
CPC分类号： H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： An intermediate layer for a stacked type photoelectric conversion device including an n-type silicon-based stacked body including an n-type crystalline silicon-based semiconductor layer and an n-type silicon-based composite layer, and a p-type silicon-based stacked body including a p-type crystalline silicon-based semiconductor layer and a p-type silicon-based composite layer, the n-type crystalline silicon-based semiconductor layer of the n-type silicon-based stacked body being in contact with the p-type crystalline silicon-based semiconductor layer of the p-type silicon-based stacked body, a stacked type photoelectric conversion device including the same, and a method for manufacturing a stacked type photoelectric conversion device.
摘要翻译： 一种用于层叠型光电转换装置的中间层，其包括n型硅基层叠体，其包括n型晶体硅基半导体层和n型硅基复合层，以及p型硅基 包括p型晶体硅基半导体层和p型硅基复合层的堆叠体，n型硅基层叠体的n型晶体硅基半导体层与p 型p型硅基层叠体的层叠型光电转换装置，以及叠层型光电转换装置的制造方法。
-
公开(公告)号：US07979166B2
公开(公告)日：2011-07-12
申请号：US11587938
申请日：2005-04-22
IPC分类号： G06F19/00
CPC分类号： H02J3/383 , G06Q50/06 , H02J3/06 , H02J3/386 , Y02E10/563 , Y02E10/763 , Y04S10/54 , Y04S10/60
摘要： The invention relates to a generation facility management system using natural energy, and an object of the invention is to promote introduction of a generation facility by giving a consideration for generated and consumed power.The generation facility management system is characterized in including a generation facility using natural energy and a management server for managing power information on the generation facility, wherein the generation facility includes: an energy obtaining section for obtaining natural energy; a power generating section for generating power from the obtained natural energy; an information control section for creating generated power information on the power generated by the power generating section; and a communication section for transmitting the power information to the management server, and the management server includes an information management section for determining a consideration for the power information transmitted from the generation facility by using predetermined consideration information.
摘要翻译： 本发明涉及使用自然能源的发电设备管理系统，本发明的目的是通过考虑生成和消耗功率来促进发电设备的引入。 发电设备管理系统的特征在于包括使用自然能源的发电设备和用于管理发电设备上的电力信息的管理服务器，其中发电设备包括：能量获取部分，用于获得自然能; 发电部，用于从所获得的自然能发电; 信息控制部分，用于创建关于由发电部分产生的电力的生成电力信息; 以及用于将功率信息发送到管理服务器的通信部分，并且管理服务器包括信息管理部分，用于通过使用预定的考虑信息来确定从发电设备发送的功率信息的考虑。
-
36.发明授权公开(公告)号：US07195673B2
公开(公告)日：2007-03-27
申请号：US10735621
申请日：2003-12-16
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
-
公开(公告)号：US06525264B2
公开(公告)日：2003-02-25
申请号：US09901618
申请日：2001-07-11
IPC分类号： H01L31024
CPC分类号： H01L31/0468 , H01L31/03767 , H01L31/046 , H01L31/048 , H01L31/186 , H02S40/40 , Y02E10/50 , Y02P70/521
摘要： A thin-film solar cell module of a light transmission type includes a light-transmissive substrate; a front electrode layer; a rear electrode layer, and a photovoltaic conversion layer. The rear electrode layer, front electrode layer, and photovoltaic conversion layer are sequentially laminated on the light-transmissive substrate. A heat retention member covers the rear electrode layer, and a sealing layer is provided for sealing the rear electrode layer. In certain embodiments, the heat retention member has a light absorptance of 40% or more within a near-infrared wavelength range of 1,500 to 2,000 nm.
摘要翻译： 透光型薄膜太阳能电池模块包括透光基板; 前电极层; 背面电极层和光电转换层。 后电极层，前电极层和光电转换层依次层叠在透光性基板上。 保温构件覆盖后电极层，并且设置密封层以密封后电极层。 在某些实施方案中，保温构件在1,500-2,000nm的近红外波长范围内具有40％以上的光吸收率。
-
公开(公告)号：US06383898B1
公开(公告)日：2002-05-07
申请号：US09577879
申请日：2000-05-25
申请人： Katsushi Kishimoto
发明人： Katsushi Kishimoto
IPC分类号： H01L2120
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device including a plurality of pin junction layers, wherein at least a p-layer adjacent to an n-layer is formed of a stack of an amorphous silicon layer as a first p-layer and an amorphous silicon layer as a second p-layer, the first p-layer having a thickness of 5 nm or less and containing a p-type impurity and an n-type impurity, and the second p-layer having a p-type impurity concentration gradually decreasing as it is closer to an i-layer.
摘要翻译： 一种光电转换装置，包括多个针结层，其中至少与n层相邻的p层由作为第一p层的非晶硅层和作为第二p层的非晶硅层的堆叠形成 层，具有5nm以下的厚度的第一p层，并且含有p型杂质和n型杂质，并且具有p型杂质浓度的第二p层随着其接近而逐渐降低 一个i层。
-
公开(公告)号：US06242686B1
公开(公告)日：2001-06-05
申请号：US09330165
申请日：1999-06-11
IPC分类号： H01L31075
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.
摘要翻译： 光电器件具有p层，i层和n层的pin结，其中p层包括第一p层和其间的第二p层，第一p层具有厚度 5nm以下，均匀掺杂有p型杂质，第2p层是通过分解不含p型杂质的气体形成的。
-
公开(公告)号：US20090166328A1
公开(公告)日：2009-07-02
申请号：US12162957
申请日：2006-12-26
申请人： Katsushi Kishimoto
发明人： Katsushi Kishimoto
IPC分类号： B44C1/22
CPC分类号： H01L21/3065 , H01J37/3244 , H01J37/32449
摘要： A diluent gas that is more likely to be decomposed than an etching gas is used to generate a plasma. The etching gas is thereafter introduced into a plasma processing reaction chamber and the flow rate is adjusted so that the flow rate of the etching gas is increased while simultaneously the flow rate of the diluent gas is decreased by an amount substantially equal to the increase of the flow rate of the etching gas. Thus, a variation of the pressure in the plasma processing reaction chamber is reduced. Further, the gas flow rate is set to a predetermined value to satisfy desired conditions while keeping the generated plasma.
摘要翻译： 使用比蚀刻气体更容易分解的稀释气体来产生等离子体。 然后将蚀刻气体引入等离子体处理反应室，调节流量，使得蚀刻气体的流量增加，同时稀释气体的流量同时降低基本上等于 蚀刻气体的流量。 因此，等离子体处理反应室中的压力变化减小。 此外，在保持产生的等离子体的同时，将气体流量设定为预定值以满足期望条件。
-
-
-
-
-
-
-
-
-
搜索结果
44 条记录 (耗时 0.059 秒)
