公开(公告)号：US09397167B2

公开(公告)日：2016-07-19

申请号：US13729713

申请日：2012-12-28

申请人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778 ,  H01L29/06 ,  H01L33/00 ,  H01L33/12

CPC分类号： H01L29/2003 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0649 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12

摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.

摘要翻译： 氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。 硅衬底具有主表面。 堆叠的多层单元设置在主表面上。 堆叠的多层单元包括N个缓冲层。 缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。 第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。 第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。 对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。 含硅单元设置在堆叠的多层单元上。 上层单元设置在含硅单元上。

公开(公告)号：US09349590B2

公开(公告)日：2016-05-24

申请号：US13604183

申请日：2012-09-05

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/12

CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US08680537B2

公开(公告)日：2014-03-25

申请号：US13602868

申请日：2012-09-04

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/02

CPC分类号： H01L29/205 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/365 ,  H01L29/7783 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0

摘要翻译： 根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。 层叠体设置在基础层和功能层之间。 层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

公开(公告)号：US20130069098A1

公开(公告)日：2013-03-21

申请号：US13677828

申请日：2012-11-15

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/50

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

摘要翻译： 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。

公开(公告)号：US08368104B2

公开(公告)日：2013-02-05

申请号：US12874413

申请日：2010-09-02

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

公开(公告)号：US20120056526A1

公开(公告)日：2012-03-08

申请号：US13034120

申请日：2011-02-24

申请人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

发明人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC分类号： H01J1/62

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

公开(公告)号：US09053931B2

公开(公告)日：2015-06-09

申请号：US13626265

申请日：2012-09-25

申请人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L21/02 ,  H01L29/10 ,  H01L29/205 ,  H01L33/32 ,  H01L33/06

CPC分类号： H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

摘要： According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ W i＆nlE; 0。008。

公开(公告)号：US08829544B2

公开(公告)日：2014-09-09

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/12

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20140061693A1

公开(公告)日：2014-03-06

申请号：US13626265

申请日：2012-09-25

申请人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L31/0304 ,  H01L21/20 ,  H01L29/205

CPC分类号： H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

摘要： According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ Wi0.008。

公开(公告)号：US08461611B2

公开(公告)日：2013-06-11

申请号：US13208658

申请日：2011-08-12

申请人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。