利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

278 条记录 (耗时 0.026 秒)

    Semiconductor device
    33.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08835950B2

    公开(公告)日：2014-09-16

    申请号：US13398170

    申请日：2012-02-16

    申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L29/22 ,  H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
    36.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    氮化物半导体发光器件

    公开(公告)号：US20110037049A1

    公开(公告)日：2011-02-17

    申请号：US12717653

    申请日：2010-03-04

    申请人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

    发明人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L33/30

    CPC分类号： H01L33/32 ,  H01L33/06

    摘要： Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of Iny1Ga1-y1N, a second subbarrier layer having a composition of Iny2Ga1-y2N and a third subbarrier layer having a composition of Iny3Ga1-y3N, in which y1, y2 and y3 satisfy the relationship of 0≦y1,y3

    摘要翻译： 公开了一种氮化物半导体发光器件，其包括衬底，形成在衬底上的一对p型和n型覆盖层以及具有单量子阱结构或多量子阱结构的有源层，其夹在 在p型覆盖层和n型覆盖层之间，包括量子阱层和一对阻挡层，每个阻挡层的带隙比量子阱层的带隙大，量子阱层夹在一对 阻挡层。 所述一对势垒层中的每一个具有多层结构，包括从量子阱层侧开始具有In y Ga 1-y N N的组成的第一子屏蔽层，具有In y Ga 1-y N N的组成的第二子隔离层和第三子阱 y1，y2和y3满足0＆nlE; y1，y3

    Semiconductor device
    38.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07397069B2

    公开(公告)日：2008-07-08

    申请号：US11511337

    申请日：2006-08-29

    申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L29/22

    CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    Vapor deposition method and vapor deposition apparatus
    39.
    发明授权
    Vapor deposition method and vapor deposition apparatus 有权
    气相沉积法和蒸镀装置

    公开(公告)号：US08815717B2

    公开(公告)日：2014-08-26

    申请号：US12875835

    申请日：2010-09-03

    申请人： Yoshiyuki Harada ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

    发明人： Yoshiyuki Harada ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： C23C16/45504 ,  C23C16/303 ,  C23C16/45574 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

    摘要翻译： 根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层， 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

    Semiconductor light emitting device
    40.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08441023B2

    公开(公告)日：2013-05-14

    申请号：US13226045

    申请日：2011-09-06

    申请人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/007 ,  H01L33/46

    摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

    摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。