Abstract:
A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.
Abstract:
In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.
Abstract:
A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.
Abstract:
A method according to embodiments of the invention includes providing a plurality of LEDs attached to a mount. A filter is attached to at least one of the plurality of LEDs. A protective layer is formed over the filter. A reflective layer is formed over the mount. A portion of the reflective layer disposed over the protective layer is removed.
Abstract:
A phosphor converted Light Emitting Diode (LED), a lamp and a luminaire are provided. The phosphor converted LED 106 comprises a LED 102, a first luminescent material 166, a second luminescent material 164 and a third luminescent material 162. The LED 102 emits a first spectral distribution having a first peak wavelength in the blue spectral range. The first luminescent material 166 absorbs a portion of the light of the first spectral distribution and converts at least a portion of the absorbed light towards light of a second spectral distribution. The second spectral distribution has a second peak wavelength in the green spectral range. The second luminescent material 164 absorbs absorbing a portion of the light of the first spectral distribution and/or a portion of the second spectral distribution. The second luminescent material 164 converts at least a portion of the absorbed light towards lights of a third spectral distribution. The third spectral distribution has a third spectral width and has a third peak wavelength. The third luminescent material 162 absorbs a portion of the light of at least one of the first spectral distribution, second spectral distribution, and the third spectral distribution. The third luminescent material 162 converts at least a portion of the absorbed light towards light of a fourth spectral distribution. The fourth spectral distribution has a fourth spectral width and has a fourth peak wavelength. The third peak wavelength and the fourth peak wavelength are in the orange/red spectral range. The third peak wavelength is smaller than the fourth peak wavelength and the third spectral width is larger than the fourth spectral width.
Abstract:
In one embodiment, the transparent growth substrate (38) of an LED die is formed to have light scattering areas (40A-C), such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides (42A, 42B) of the substrate to reduce light guiding. Another embodiment comprises a replacement substrate may be formed to include reflective particles in selected areas where there are no corresponding light generating areas in the LED semiconductor layers such as—type metal contacts (28). This prevents reabsorption into absorbing regions of the semiconductor layer thereby enhancing external efficiency of the device. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile (20) that is affixed to the top of the LED.
Abstract:
The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b(MN)*c(SiN4/3)*d1CeO3/2*d2EuO*xSiO2*yAlO3/2 wherein AE is an alkaline earth metal chosen of the group of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen of the group of Al, B, Ga, Sc with d1>10*d2. In combination with a UV to blue light generating device this material leads to an improved light quality and stability, especially an improved temperature stability for a wide range of applications.
Abstract:
The invention relates to a light delivery device comprising a conversion element and one or several LEDs, which emit light into the conversion element. The light is then converted and emitted with a high radiant flux.