公开(公告)号：US06312526B1

公开(公告)日：2001-11-06

申请号：US09440709

申请日：1999-11-16

申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

IPC分类号： C23C1604

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/4557 ,  C23C16/45589 ,  H01L21/31691

摘要： In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

摘要翻译： 在化学气相沉积装置中，在装置的反应室内设置用于安装基板的基板台。 提供了用于引入源气体和排气口并用于排出源气体的源气体入口。 为排气口设置的排气阀随时间开启和关闭。 源气体相对于固定基板的流动方向随时间变化。 本化学气相沉积装置允许改善基板表面内的膜厚度，组成比等的均匀性以及反应室内产生的异物颗粒的减少。

公开(公告)号：US06235649B1

公开(公告)日：2001-05-22

申请号：US09444297

申请日：1999-11-22

申请人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

发明人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

IPC分类号： H01L21316

CPC分类号： H01L21/31691 ,  C23C16/409 ,  H01L28/55

摘要： A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.

摘要翻译： 提供了形成具有足够覆盖面的（Ba，Sr）TiO 3高介电常数薄膜的方法。 将Ba材料，Sr材料和包含双（叔丁氧基）双（二戊酰甲烷甲酸酯）钛的Ti材料溶解在有机溶剂中以获得溶液材料。 使溶液气化，得到原料气体。 通过使用原料气体的CVD反应在基板上形成（Ba，Sr）TiO 3薄膜。

公开(公告)号：US5555154A

公开(公告)日：1996-09-10

申请号：US367745

申请日：1995-01-03

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01G4/10

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。

公开(公告)号：US07637482B2

公开(公告)日：2009-12-29

申请号：US12219584

申请日：2008-07-24

申请人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

发明人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

IPC分类号： B01F3/04

CPC分类号： F16K11/207 ,  B01D1/0082 ,  C23C16/448 ,  C23C16/4486 ,  F16K31/1221 ,  Y10S261/65

摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

摘要翻译： 在液体物质供给装置中，三端口二阀方向控制阀设置在输送管线中，物质容器和输送管线通过四端口三阀方向控制阀连接在一起，使得四端口 三阀方向控制阀和物质容器可以作为一个单元从输送管线中取出。 此外，在蒸发器中，设置有用于包围内部导管的端部的孔部件，在内部导管的端部，将由气体和与其混合的液体物质构成的混合物流动，将用于雾化的气体通过间隙喷射到蒸发室内 限定在内部管道和孔口构件之间。 此外，可以根据液体物质的性质独立地控制蒸发室中的汽化表面的温度。

公开(公告)号：US07422198B2

公开(公告)日：2008-09-09

申请号：US11604235

申请日：2006-11-27

申请人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

发明人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

IPC分类号： B01F3/04

CPC分类号： F16K11/207 ,  B01D1/0082 ,  C23C16/448 ,  C23C16/4486 ,  F16K31/1221 ,  Y10S261/65

摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

摘要翻译： 在液体物质供给装置中，三端口二阀方向控制阀设置在输送管线中，物质容器和输送管线通过四端口三阀方向控制阀连接在一起，使得四端口 三阀方向控制阀和物质容器可以作为一个单元从输送管线中取出。 此外，在蒸发器中，设置有用于包围内部导管的端部的孔部件，在内部导管的端部，将由气体和与其混合的液体物质构成的混合物流动，将用于雾化的气体通过间隙喷射到蒸发室内 限定在内部管道和孔口构件之间。 此外，可以根据液体物质的性质独立地控制蒸发室中的汽化表面的温度。

公开(公告)号：US07163197B2

公开(公告)日：2007-01-16

申请号：US09957470

申请日：2001-09-21

申请人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

发明人： Naoki Yoshioka ,  Tatsushi Kawamoto ,  Mitsushi Kawao ,  Shigeru Matsuno ,  Akira Yamada ,  Shoji Miyashita ,  Fusaoki Uchikawa

IPC分类号： B01F3/04

CPC分类号： F16K11/207 ,  B01D1/0082 ,  C23C16/448 ,  C23C16/4486 ,  F16K31/1221 ,  Y10S261/65

摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

摘要翻译： 在液体物质供给装置中，三端口二阀方向控制阀设置在输送管线中，物质容器和输送管线通过四端口三阀方向控制阀连接在一起，使得四端口 三阀方向控制阀和物质容器可以作为一个单元从输送管线中取出。 此外，在蒸发器中，设置有用于包围内部导管的端部的孔部件，在内部导管的端部，将由气体和与其混合的液体物质构成的混合物流动，将用于雾化的气体通过间隙喷射到蒸发室内 限定在内部管道和孔口构件之间。 此外，可以根据液体物质的性质独立地控制蒸发室中的汽化表面的温度。

公开(公告)号：US07078330B2

公开(公告)日：2006-07-18

申请号：US10790757

申请日：2004-03-03

申请人： Akira Maeda ,  Takeyuki Maegawa ,  Shigeru Matsuno ,  Takuo Ozawa ,  Takanori Sone ,  Shoji Miyashita ,  Yasumichi Hatanaka ,  Masato Koyama ,  Takahiro Nagamine ,  Susumu Arai

发明人： Akira Maeda ,  Takeyuki Maegawa ,  Shigeru Matsuno ,  Takuo Ozawa ,  Takanori Sone ,  Shoji Miyashita ,  Yasumichi Hatanaka ,  Masato Koyama ,  Takahiro Nagamine ,  Susumu Arai

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05571 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H05K3/244 ,  H05K3/3463 ,  H05K3/363 ,  H01L2924/00 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155

摘要： A metal electrode is formed on a substrate. The metal electrode includes a first layer, a second layer, and a third layer lying, from an outermost surface of the metal electrode toward the substrate, in this order. The first layer contains tin as a principal constituent and the second layer contains a metallic element which produces an eutectic reaction with tin, wherein the melting point of the first layer is higher than the melting point of the second layer. The third layer is an underlying metallic layer for the first and second layers.

摘要翻译： 在基板上形成金属电极。 金属电极包括从金属电极的最外表面朝向衬底的第一层，第二层和第三层。 第一层含有锡作为主要成分，第二层含有与锡产生共晶反应的金属元素，其中第一层的熔点高于第二层的熔点。 第三层是第一层和第二层的底层金属层。

公开(公告)号：US06638880B2

公开(公告)日：2003-10-28

申请号：US09981824

申请日：2001-10-19

申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

IPC分类号： H01L2100

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/4557 ,  C23C16/45589 ,  H01L21/31691

摘要： In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

公开(公告)号：US06512297B2

公开(公告)日：2003-01-28

申请号：US09277185

申请日：1999-03-26

申请人： Shigeru Matsuno ,  Fusaoki Uchikawa ,  Takehiko Sato ,  Akira Yamada

发明人： Shigeru Matsuno ,  Fusaoki Uchikawa ,  Takehiko Sato ,  Akira Yamada

IPC分类号： C23C1600

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L28/55

摘要： A CVD source material which can be stably tramsported to a reactor in order to form a platinum metal, Cu, or an oxide of them as an electrode. An organometallic compound including a platinum metal (Ru, Pt, Ir, Pd, Os, Rh, Re) or Cu, is dissolved into tetrahydrofuran or a solvent containing tetrahydrofuran to obtain the CVD source material. In this material, the amount of moisture is preferably not more than 200 ppm. A film is formed by CVD employing this source material, the material is supplied stably, and the properties of the electrode film are improved. The capacitance property of the film is improved. Wiring of an electrical device may be formed by employing source material.

摘要翻译： 可以将CVD源材料稳定地传送到反应器以形成铂金属Cu或其氧化物作为电极。 将包含铂金属（Ru，Pt，Ir，Pd，Os，Rh，Re）或Cu的有机金属化合物溶解在四氢呋喃或含有四氢呋喃的溶剂中，得到CVD源材料。 在该材料中，水分的含量优选为200ppm以下。 通过使用该源材料的CVD形成膜，稳定地供给材料，并提高电极膜的性能。 膜的电容性能得到改善。 可以通过使用源材料来形成电气装置的布线。

公开(公告)号：US06448191B2

公开(公告)日：2002-09-10

申请号：US09832928

申请日：2001-04-12

申请人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

发明人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

IPC分类号： H01L2131

CPC分类号： H01L21/31691 ,  C23C16/409 ,  H01L28/55

摘要： A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.

摘要翻译： 提供了形成具有足够覆盖面的（Ba，Sr）TiO 3高介电常数薄膜的方法。 将Ba材料，Sr材料和包含双（叔丁氧基）双（二戊酰甲烷甲酸酯）钛的Ti材料溶解在有机溶剂中以获得溶液材料。 使溶液气化，得到原料气体。 通过使用原料气体的CVD反应在基板上形成（Ba，Sr）TiO 3薄膜。