公开(公告)号：US08922018B2

公开(公告)日：2014-12-30

申请号：US13427268

申请日：2012-03-22

申请人： Takeshi Ishizaki ,  Atsuko Sakata ,  Junichi Wada ,  Masahiko Hasunuma

发明人： Takeshi Ishizaki ,  Atsuko Sakata ,  Junichi Wada ,  Masahiko Hasunuma

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/52 ,  H01L21/44 ,  H01L27/10 ,  H01L21/764 ,  H01L27/06 ,  H01L45/00 ,  H01L27/115 ,  H01L27/24

CPC分类号： H01L27/101 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/0688 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer.

摘要翻译： 根据一个实施例，半导体器件包括设置在覆盖其中形成元件的半导体衬底的第一层间绝缘膜上的互连，设置在互连的上表面上的覆盖层，以及设置在互连和 覆盖互连的第二层间绝缘膜。 互连包括高熔点导电层，并且互连的宽度小于盖层的宽度。 阻挡膜包括在高熔点导电层中含有元素的化合物。

公开(公告)号：US08637380B2

公开(公告)日：2014-01-28

申请号：US13607381

申请日：2012-09-07

申请人： Atsuko Sakata ,  Kazuyuki Higashi ,  Akiko Nomachi ,  Takeshi Ishizaki

发明人： Atsuko Sakata ,  Kazuyuki Higashi ,  Akiko Nomachi ,  Takeshi Ishizaki

IPC分类号： H01L21/30 ,  H01L21/44

CPC分类号： H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

摘要： According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate.

摘要翻译： 根据一个实施例，一种制造半导体器件的方法，包括在其表面上支撑半导体衬底的玻璃衬底的表面上形成金属膜; 通过从前表面氧化整个或至少一部分金属膜来形成金属氧化物膜; 在金属氧化物膜上形成诸如氮化硅的保护膜; 用静电卡盘保持保护膜的前表面; 并且在保护膜的前表面通过静电卡盘接触的同时，在半导体衬底中形成用于电连接的通孔; 然后使用激光将玻璃衬底从半导体衬底分层。

公开(公告)号：US07994054B2

公开(公告)日：2011-08-09

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US20100244256A1

公开(公告)日：2010-09-30

申请号：US12712001

申请日：2010-02-24

申请人： Satoshi Kato ,  Atsuko Sakata ,  Masahiko Hasunuma ,  Noritake Oomachi

发明人： Satoshi Kato ,  Atsuko Sakata ,  Masahiko Hasunuma ,  Noritake Oomachi

IPC分类号： H01L23/48 ,  H01L21/326 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device includes an interlayer insulating film formed above a semiconductor substrate. The interlayer insulating film has a concave portion. A barrier metal layer is formed along a bottom and a sidewall of the concave portion. The barrier metal layer has a first portion provided along the sidewall of the concave portion and a second portion provided along the bottom of the concave portion. A metal wiring layer is formed in the concave portion via the barrier metal layer. The first portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is more than 50 at %, and the second portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is relatively larger than the titanium content of the first portion or of a Ti layer.

摘要翻译： 半导体器件包括在半导体衬底上形成的层间绝缘膜。 层间绝缘膜具有凹部。 沿着凹部的底部和侧壁形成阻挡金属层。 阻挡金属层具有沿着凹部的侧壁设置的第一部分和沿着凹部的底部设置的第二部分。 通过阻挡金属层在凹部中形成金属布线层。 阻挡金属层的第一部分由钛含量大于50原子％的氮化钛层构成，阻挡金属层的第二部分由钛含量相对大于钛的氮化钛层构成 第一部分或Ti层的含量。

公开(公告)号：US20080261398A1

公开(公告)日：2008-10-23

申请号：US12010372

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

公开(公告)号：US20080090410A1

公开(公告)日：2008-04-17

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US20080023838A1

公开(公告)日：2008-01-31

申请号：US11878020

申请日：2007-07-20

申请人： Atsuko Sakata ,  Jun-ichi Wada

发明人： Atsuko Sakata ,  Jun-ichi Wada

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/2855 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device comprises releasing an oxidation source included in an interlayer dielectric film having an opening portion formed on a surface thereof and being present on the surface of the interlayer dielectric film at a first substrate temperature, forming a first layer containing Ti and N to contact with at least a part of the interlayer dielectric film at a second substrate temperature lower than the first substrate temperature, wherein a Ti content in the first layer is more than 50 at % in all components, provided that oxygen and precious metals are excluded from the all components, and forming a Cu metal layer above the first layer.

摘要翻译： 半导体器件的制造方法包括：将包含在其表面上形成有开口部分的层间电介质膜中的氧化源释放，并且在第一衬底温度下存在于层间电介质膜的表面上，形成含有Ti 和N在低于第一衬底温度的第二衬底温度下与至少一部分层间绝缘膜接触，其中第一层中的Ti含量在所有组分中大于50原子％，条件是氧和贵金属 被排除在所有组分之外，并且在第一层之上形成Cu金属层。

公开(公告)号：US20070166331A1

公开(公告)日：2007-07-19

申请号：US10551263

申请日：2003-03-28

申请人： Toshihiro Nakashima ,  Takumi Sasaki ,  Kazuhiko Kimachi ,  Shigeki Kuwata ,  Tsukasa Nishihara ,  Atsuko Sakata ,  Masao Ohkuchi ,  Tomoyuki Koshi ,  Toshiyuki Edano

发明人： Toshihiro Nakashima ,  Takumi Sasaki ,  Kazuhiko Kimachi ,  Shigeki Kuwata ,  Tsukasa Nishihara ,  Atsuko Sakata ,  Masao Ohkuchi ,  Tomoyuki Koshi ,  Toshiyuki Edano

IPC分类号： A61K39/09 ,  C07K14/31

CPC分类号： A61K38/164 ,  C07K14/31 ,  C07K16/1271

摘要： A novel prophylactic/remedy for immunopathy is provided which is not neutralized by a neutralizing antibody to Staphylococcal enterotoxin B (SEB), known as one of superantigens, and may effectively act as a superantigen. A modified SEB having a reduced reactivity with a neutralizing antibody to SEB (anti-SEB antibody) and a prophylactic/remedy for immunopathy comprising as an active ingredient said modified SEB. The modified SEB of the present invention may be prepared with the evolutionary molecular engineering technique by introducing amino acid substitution in the amino acid sequence of SEB, especially at an epitope recognition site of the anti-SEB antibody in the amino acid sequence of SEB.

摘要翻译： 提供一种免疫病的新型预防/治疗方法，其不被被称为超抗原之一的葡萄球菌肠毒素B（SEB）的中和抗体中和，并且可以有效地作为超抗原。 与SEB中和抗体（抗SEB抗体）具有降低的反应性的修饰SEB和用于免疫病的预防/治疗方法，其包含所述经修饰的SEB作为活性成分。 本发明的经修饰的SEB可以通过在SEB的氨基酸序列中引入氨基酸取代，特别是在SEB的氨基酸序列中的抗SEB抗体的表位识别位点处进行进化分子工程技术来制备。

公开(公告)号：US06933216B2

公开(公告)日：2005-08-23

申请号：US10314364

申请日：2002-12-09

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L21/20

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 μm or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

公开(公告)号：US6071810A

公开(公告)日：2000-06-06

申请号：US997328

申请日：1997-12-23

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。