Abstract:
A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.
Abstract:
A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.
Abstract:
A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.
Abstract:
A method for testing a semiconductor component includes the steps of bonding an interconnect to the component to form bonded electrical connections, applying test signals through the bonded electrical connections, and then separating the interconnect from the component. The bonding step can be performed using metallurgical bonding, and the separating step can be performed using solder-wettable and solder non-wettable metal layers on the interconnect or the component. During the separating step the solder-wettable layers are dissolved, reducing adhesion of the bonded electrical connections, and permitting separation of the component and interconnect. The interconnect includes interconnect contacts configured for bonding to, and then separation from component contacts on the components. A system includes the interconnect, an alignment system for aligning the substrate to the interconnect, a bonding system for bonding the component to the interconnect, and a heating system for heating the component and the interconnect for separation.
Abstract:
The present invention relates to methods for forming through-wafer interconnects in semiconductor substrates and the resulting structures. In one embodiment, a method for forming a through-wafer interconnect includes providing a substrate having a pad on a surface thereof, depositing a passivation layer over the pad and the surface of the substrate, and forming an aperture through the passivation layer and the pad using a substantially continuous process. An insulative layer is deposited in the aperture followed by a conductive layer and a conductive fill. In another embodiment of the invention, a semiconductor device is formed including a first interconnect structure that extends through a conductive pad and is electrically coupled with the conductive pad while a second interconnect structure is formed through another conductive pad while being electrically isolated therefrom. Semiconductor devices and assemblies produced with the methods are also disclosed.
Abstract:
A method for testing a semiconductor component includes the steps of bonding an interconnect to the component to form bonded electrical connections, applying test signals through the bonded electrical connections, and then separating the interconnect from the component. The bonding step can be performed using metallurgical bonding, and the separating step can be performed using solder-wettable and solder non-wettable metal layers on the interconnect or the component. During the separating step the solder-wettable layers are dissolved, reducing adhesion of the bonded electrical connections, and permitting separation of the component and interconnect. The interconnect includes interconnect contacts configured for bonding to, and then separation from component contacts on the components. A system includes the interconnect, an alignment system for aligning the substrate to the interconnect, a bonding system for bonding the component to the interconnect, and a heating system for heating the component and the interconnect for separation.
Abstract:
Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond-pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.
Abstract:
The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.
Abstract:
A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.
Abstract:
A microelectronic imager comprising an imaging unit and an optics unit attached to the imaging unit, and methods for packaging microelectronic imagers. In one embodiment, the imaging unit can include (a) a microelectronic die with an image sensor and a plurality of external contacts electrically coupled to the image sensor and (b) a first referencing element fixed to the imaging unit. The optics unit can include an optic member and a second referencing element fixed to the optics unit. The second referencing element is releasably seated with the first referencing element at a preset position in which the optic member is situated at a desired location relative to the image sensor.