公开(公告)号：US07576394B2

公开(公告)日：2009-08-18

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L31/0392

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US20080217684A1

公开(公告)日：2008-09-11

申请号：US12011286

申请日：2008-01-25

申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734

摘要： A semiconductor device comprises a trench-gate type field-effect transistor on a semiconductor substrate having a first main surface and a second main surface oppositely positioned in a thickness direction, wherein the trench-gate type field-effect transistor comprises a first semiconductor region at the first main surface side; a second semiconductor region at the second main surface; a semiconductor well region between the first semiconductor region and the second semiconductor region; a trench formed so as to protrude in a first direction intersecting the second main surface; a gate electrode formed on an inner surface of the trench via a gate insulating film, and a bottom of the gate electrode is in the first semiconductor region, and a well bottom has a well deep portion and a well shallow portion, and the well deep portion is in a region more distant from the gate insulating film compared to the well shallow portion.

摘要翻译： 半导体器件包括在半导体衬底上的沟槽栅型场效应晶体管，其具有在厚度方向上相对定位的第一主表面和第二主表面，其中沟槽栅型场效应晶体管包括第一半导体区， 第一主表面; 在第二主表面处的第二半导体区域; 在所述第一半导体区域和所述第二半导体区域之间的半导体阱区域; 形成为沿与第二主表面相交的第一方向突出的沟槽; 经由栅极绝缘膜形成在沟槽的内表面上的栅极电极和栅电极的底部位于第一半导体区域中，阱底部具有阱深部和浅部，阱深 与较浅的部分相比，部分位于比栅极绝缘膜更远的区域。

公开(公告)号：US5719740A

公开(公告)日：1998-02-17

申请号：US595240

申请日：1996-02-01

申请人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

IPC分类号： G01D5/241 ,  G01L9/00 ,  G01P15/125 ,  H01G7/00 ,  G01L9/12

CPC分类号： G01L9/0072 ,  G01D5/2417 ,  G01P15/125 ,  Y10T29/43

摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.

摘要翻译： 通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。 以这种方式，隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

公开(公告)号：US4770923A

公开(公告)日：1988-09-13

申请号：US800042

申请日：1985-11-20

申请人： Kiyotaka Wasa ,  Takashi Hirao ,  Atsuo Nishikawa ,  Seiji Nishino ,  Takeo Ohta

发明人： Kiyotaka Wasa ,  Takashi Hirao ,  Atsuo Nishikawa ,  Seiji Nishino ,  Takeo Ohta

IPC分类号： H01L21/314 ,  G11B5/72 ,  G11B7/24 ,  H01L23/29 ,  H01L23/31 ,  B05D3/06 ,  B32B9/00

CPC分类号： H01L23/3157 ,  G11B5/72 ,  G11B7/2403 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/24942 ,  Y10T428/31576 ,  Y10T428/31601 ,  Y10T428/31605

摘要： An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.

摘要翻译： 在诸如由聚碳酸酯塑料材料制成的有机基材（11）上形成诸如氮化硅的无机保护膜（12），其用于在水分子（15）上保护基底上的湿敏功能元件（16） 在衬底和保护膜之间的软缓冲界面膜（13），并且缓冲膜由于有机衬底和保护膜的热膨胀系数的差异而释放应力。

公开(公告)号：US4492605A

公开(公告)日：1985-01-08

申请号：US476707

申请日：1983-03-18

申请人： Shin-ichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Motonori Mochizuki

发明人： Shin-ichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Motonori Mochizuki

IPC分类号： H01L31/04 ,  C23C16/54 ,  H01L21/205 ,  H01L31/20 ,  C23C13/10 ,  H01L31/18

CPC分类号： H01L31/206 ,  C23C16/54 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.

摘要翻译： 一种制造光伏器件的方法，包括以下步骤：将至少一个衬底移动到反应室中，引起原料气体在所述反应室中的等离子体反应，由此在所述衬底上形成第一导电类型的非晶硅层，使所述 至少一个衬底进入下一个等离子体反应的下一个反应室，引起所述反应室中下一个原料气体的下一个等离子体反应，从而在第一导电类型的所述层上形成第二导电类型的第二非晶硅层 改进在完成所述第一导电类型的非晶硅层的所述形成之后，将所述反应室的气体气氛改变成与所述下一个反应的下一个气体气氛基本相同且等压的不同气氛 然后将所述衬底移动到所述下一个反应室。

公开(公告)号：US09251055B2

公开(公告)日：2016-02-02

申请号：US13599087

申请日：2012-08-30

申请人： Shinji Yonezawa ,  Takashi Hirao ,  Hirokuni Yano ,  Mitsunori Tadokoro ,  Hiroki Matsudaira ,  Akira Sawaoka

发明人： Shinji Yonezawa ,  Takashi Hirao ,  Hirokuni Yano ,  Mitsunori Tadokoro ,  Hiroki Matsudaira ,  Akira Sawaoka

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7205 ,  G06F2212/7209 ,  G11C2211/5641

摘要： A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.

摘要翻译： 实施例中的存储器系统包括存储用户数据的非易失性半导体存储器，正向查找地址转换表和反向查找地址转换表以及控制器。 控制器被配置为基于这两个表来确定存储在非易失性半导体存储器中的用户数据有效或无效。 控制器可以执行数据组织，选择确定有效的数据并在新的块中重写数据。 控制器可以以预定的比例交替地对新的块执行写入处理和重写处理。 当条件满足时，控制器可以基于写入请求中包括的地址和写入数据来确定是否满足预定条件，并且当条件不满足时将控制器写入SLC模式中的数据。

公开(公告)号：US08901838B2

公开(公告)日：2014-12-02

申请号：US13560613

申请日：2012-07-27

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

IPC分类号： H05B37/02 ,  H01L29/78 ,  H05B33/08 ,  G09G3/34 ,  H01L29/06 ,  H01L29/417

CPC分类号： H01L29/7813 ,  G09G3/342 ,  G09G2320/064 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815 ,  H05B33/0818 ,  H05B33/0827 ,  H05B33/089 ,  Y02B20/347

摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

摘要翻译： 半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成， 在每个串中流动的电流（恒流驱动）。 使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

公开(公告)号：US08120345B2

公开(公告)日：2012-02-21

申请号：US12388819

申请日：2009-02-19

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

IPC分类号： G05F1/00

CPC分类号： H02M3/156 ,  H02M2001/0025

摘要： A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.

摘要翻译： 一种应用于恒压电源装置的控制用半导体装置，具备数模转换电路，该数模转换电路以取参考电压源的输出电压作为标准参考电压，输出与第一寄存器的值相对应的基准电压， 并且基于误差放大器的输出电压产生用于驱动功率半导体器件的控制信号，所述误差放大器的差分放大通过对所述恒压电源装置的输出电压进行电阻分压而获得的反馈电压和所述参考电压。 提供了一种模拟数字转换器电路，其将采取恒压电源装置的输出电压的反馈电压转换为数字值作为参考电压，并且基于该输出，第一寄存器的值被校正为 以抵消分压电阻电路的分压比的误差的影响。

公开(公告)号：US08018255B2

公开(公告)日：2011-09-13

申请号：US12171347

申请日：2008-07-11

申请人： Takashi Hirao ,  Takayuki Hashimoto ,  Masaki Shiraishi

发明人： Takashi Hirao ,  Takayuki Hashimoto ,  Masaki Shiraishi

IPC分类号： H03K3/00

CPC分类号： H02M3/158 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/162 ,  H03K17/6871 ,  H03K19/018521 ,  H03K2217/0081 ,  H01L2924/00

摘要： A DC-DC converter in which self turn-on can be prevented and can improve power efficiency. In a non-insulated DC-DC converter, self turn-on is prevented by applying a negative voltage between a gate and a source of a low side MOSFET by the use of a capacitor for generating negative voltage when the low side MOSFET is in an OFF state. Also, when the low side MOSFET is in an ON state due to the capacitor for generating negative voltage, a positive voltage applied between the gate and the source of the low side MOSFET does not drop from a voltage of a gate driving DC power source that is supplied from a gate power input terminal. Therefore, the power efficiency is improved.

摘要翻译： 可以防止自我接通并可提高功率效率的DC-DC转换器。 在非绝缘DC-DC转换器中，通过在低侧MOSFET处于低压MOSFET的栅极和源极之间通过使用用于产生负电压的电容器施加负电压来防止自身接通 OFF状态。 此外，由于用于产生负电压的电容器，当低端MOSFET处于导通状态时，施加在低侧MOSFET的栅极和源极之间的正电压不会从栅极驱动DC电源的电压下降， 由栅极电源输入端子提供。 因此，功率效率得到提高。

公开(公告)号：US07981734B2

公开(公告)日：2011-07-19

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/302

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。