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公开(公告)号：US20220336705A1
公开(公告)日：2022-10-20
申请号：US17855593
申请日：2022-06-30
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US11227972B2
公开(公告)日：2022-01-18
申请号：US16553720
申请日：2019-08-28
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
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公开(公告)号：US10923627B2
公开(公告)日：2021-02-16
申请号：US15679958
申请日：2017-08-17
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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公开(公告)号：US20180374993A1
公开(公告)日：2018-12-27
申请号：US16104857
申请日：2018-08-17
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L33/58 , H01L33/42 , H01L31/0216 , H01L33/22 , H01L31/0236
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US09748442B2
公开(公告)日：2017-08-29
申请号：US14510914
申请日：2014-10-09
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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Patent Agency Ranking
公开(公告)号：US20170040563A1
公开(公告)日：2017-02-09
申请号：US15298131
申请日：2016-10-19
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Scott D. Schellhammer
CPC classification number: H01L51/52 , H01L25/0753 , H01L33/0075 , H01L33/0095 , H01L33/06 , H01L33/382 , H01L33/46 , H01L33/62 , H01L51/5218 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
Abstract translation: 公开了一种垂直固态照明（SSL）装置。 在一个实施例中，SSL设备包括形成在生长衬底上的发光结构。 单独的SSL设备可以包括形成在发光结构上的嵌入式触点和镀在至少靠近嵌入式触点的一侧的金属衬底。 电镀基板具有足够的厚度以支撑发光结构而不发生弯曲。
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37.发明申请公开(公告)号：US20160336302A1
公开(公告)日：2016-11-17
申请号：US15159237
申请日：2016-05-19
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Vladimir Odnoblyudov , Jeremy S. Frei
IPC: H01L25/075 , H01L33/62 , H01L33/00 , H01L33/48
CPC classification number: H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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38.发明申请公开(公告)号：US20160072016A1
公开(公告)日：2016-03-10
申请号：US14824911
申请日：2015-08-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Casey Kurth
CPC classification number: H01L33/647 , H01L33/145 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2933/0066 , H01L2924/00014
Abstract: Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electrical conductivity for the SSLE. In one embodiment, the conductors have higher thermal and electrical conductivities than the carrier substrate supporting the SSLE.
Abstract translation: 固态照明设备（SSLD），包括具有导体的载体衬底和制造SSLD的方法。 导体可以提供（a）在固态光发射器（SSLE）和封装衬底之间提高热导率，以及（b）改善SSLE的导电性。 在一个实施例中，导体具有比支撑SSLE的载体衬底更高的导热性和导电性。
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39.发明申请DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 有权用于半导体器件和相关系统和方法的不连续图案公开(公告)号：US20150357314A1
公开(公告)日：2015-12-10
申请号：US14738663
申请日：2015-06-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Vladimir Odnoblyudov , Jeremy S. Frei
IPC: H01L25/075 , H01L33/62 , H01L33/48
CPC classification number: H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
Abstract translation: 本文公开了用于半导体器件的不连续键。 根据特定实施例的装置包括第一基板和第二基板，第一基板和第二基板中的至少一个具有多个固态换能器。 第二基板可以包括多个突起和多个中间区域，并且可以以不连续的键连接到第一基板。 单独的固态换能器可以至少部分地设置在相应的中间区域内，并且不连续键可以包括将各个固态换能器接合到相应的中间区域的盲端的粘合材料。 本文公开了用于半导体器件的不连续键的相关方法和系统。
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40.发明申请SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES 有权具有光传输载体基板的固态传感器装置及相关系统，方法和装置公开(公告)号：US20150243835A1
公开(公告)日：2015-08-27
申请号：US14706827
申请日：2015-05-07
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Scott D. Schellhammer
CPC classification number: H01L33/0025 , H01L25/0753 , H01L25/167 , H01L27/14687 , H01L31/02 , H01L31/0236 , H01L31/035209 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/0002 , Y02E10/50 , H01L2924/00
Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. in some embodiments, the individual semiconductor structures are simulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.
Abstract translation: 具有固态换能器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，从半导体器件组件模拟各个半导体结构，并且包括连接到每个单个半导体结构的载体衬底的一部分。
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