Light emitting device and method of manufacturing same

    公开(公告)号:US10559724B2

    公开(公告)日:2020-02-11

    申请号:US15783514

    申请日:2017-10-13

    Inventor: Tadao Hayashi

    Abstract: A light emitting device includes a light emitting element, a reflective member, and a covering member. The light emitting element includes a light extraction surface, an electrode-formed surface on a side opposite to the light extraction surface, lateral surfaces positioned between the light extraction surface and the electrode-formed surface, and a pair of electrodes on the electrode-formed surface. At least a part of the pair of the electrodes is exposed outside the light emitting device. The reflective member covers the lateral surfaces of the light emitting element while being in contact with at least a part of the light emitting element, the part of the pair of the electrodes being exposed from the reflective member. The covering member includes a lens portion on an upper surface thereof. The covering member covers the light emitting element and the reflective member while being in contact with the reflective member.

    Method of manufacturing light emitting device

    公开(公告)号:US10069045B2

    公开(公告)日:2018-09-04

    申请号:US15483269

    申请日:2017-04-10

    Abstract: A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.

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