公开(公告)号：US5601966A

公开(公告)日：1997-02-11

申请号：US475167

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J9/02 ,  H01J17/06 ,  H01J19/02 ,  H01J29/04 ,  H01J31/12 ,  H04N1/00 ,  G03F7/00

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: A method is provided for fabricating a display cathode which includes forming a conductive line adjacent a face of a substrate. A region of amorphic diamond is formed adjacent a selected portion of the conductive line.

公开(公告)号：US5551903A

公开(公告)日：1996-09-03

申请号：US326302

申请日：1994-10-19

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the flat surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 在电阻柱的平坦表面附近设置一层金刚石。

公开(公告)号：US5399238A

公开(公告)日：1995-03-21

申请号：US232790

申请日：1994-04-22

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J9/02 ,  H05K3/00 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: A method of making sub-micron low work function field emission tips without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask. In one embodiment an etch is applied to low work function material covered by randomly located nuclei to form emission tips in the low work function material. In another embodiment an etch is applied to base material covered by randomly located nuclei to form tips in the base material which are then coated with low work function material to form emission tips. Diamond is the preferred low work function material.

Abstract translation: 一种制造亚微米低功函数场发射尖端而不使用光刻的方法。 该方法包括随机定位的离散核的物理气相沉积以形成不连续的蚀刻掩模。 在一个实施例中，蚀刻被施加到由随机定位的核覆盖的低功函数材料，以在低功函数材料中形成发射尖端。 在另一个实施例中，蚀刻被施加到由随机定位的核覆盖的基材上，以在基材中形成尖端，然后用低功函数材料涂覆以形成发射尖端。 钻石是首选的低功能材料。

公开(公告)号：US5317006A

公开(公告)日：1994-05-31

申请号：US771353

申请日：1991-10-04

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: C23C14/34 ,  C23C14/56 ,  H01J37/34 ,  H01L39/24 ,  H01L39/00 ,  C23C14/35

CPC classification number: H01J37/3402 ,  C23C14/3407 ,  C23C14/56 ,  H01J37/3277 ,  H01J37/342 ,  H01L39/2435 ,  Y10S505/731 ,  Y10S505/786 ,  Y10S505/816

Abstract: An improved cathode for a sputtering system includes a metal cylinder and strips of material bonded to the inside of the metal cylinder and/or material sprayed onto the inside of the metal cylinder. The strips may have various specified compositions and/or configurations and/or other characteristics which enhance the ability of the sputtering system to deposit films of high temperature superconductor material on substrates.

Abstract translation: 用于溅射系统的改进的阴极包括金属圆筒和粘合到金属圆筒内部和/或喷射到金属圆筒内部的材料的材料条。 条带可以具有各种指定的组成和/或构造和/或其他特性，其增强了溅射系统将高温超导体材料的膜沉积在衬底上的能力。

公开(公告)号：US5290732A

公开(公告)日：1994-03-01

申请号：US896126

申请日：1992-06-09

Applicant: Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

Inventor： Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/00 ,  H01L21/285

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01J2201/30457 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, and multiple sources for depositing alloyed (tin-lead) bumps with constant composition.

Abstract translation: 提高了诸如多芯片模块和集成电路芯片的衬底上的金属凸块的电离金属簇束沉积。 本发明公开了用于去除在凸起周围沉积在衬底上的不需要的金属的湿蚀刻技术，以及用于沉积具有恒定组成的合金（锡铅）凸块的多个源。

公开(公告)号：US5254493A

公开(公告)日：1993-10-19

申请号：US841311

申请日：1992-02-24

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H05K1/16 ,  H05K3/06 ,  H05K3/46 ,  H01L21/70

CPC classification number: H05K1/16 ,  H05K1/162 ,  H05K1/167 ,  H05K2201/0317 ,  H05K2201/09563 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K3/061 ,  H05K3/4647 ,  Y10S148/136

Abstract: A process for fabricating integrated resistors in high density interconnect substrates for multi-chip modules. In addition, the resistor material can be converted selectively into an insulator for optionally allowing for the simultaneous fabrication of integrated resistors and capacitors in relatively few steps. The process is well suited for copper/polyimide substrates.

Abstract translation: 一种用于制造用于多芯片模块的高密度互连基板中的集成电阻器的方法。 此外，电阻器材料可以选择性地转换成绝缘体，以可选地允许在相对较少的步骤中同时制造集成电阻器和电容器。 该工艺非常适用于铜/聚酰亚胺基板。

公开(公告)号：US5229358A

公开(公告)日：1993-07-20

申请号：US621390

申请日：1990-12-03

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: C23C14/34 ,  C23C14/56 ,  H01J37/34 ,  H01L39/24

CPC classification number: H01J37/3277 ,  C23C14/3407 ,  C23C14/56 ,  H01J37/3402 ,  H01J37/342 ,  H01L39/2451 ,  H01L39/248 ,  Y10S505/731 ,  Y10S505/74 ,  Y10S505/786

Abstract: A superconducting wire which includes a base wire and at least a superconduction layer formed on the base wire. The superconduction layer may be formed by using a sputtering system for depositing a film of high temperature superconductor material on the base wire. The superconducting wire may further include an adhesion layer, a diffusion barrier layer and/or a protection layer. Several superconducting wires may be grouped together in a metal matrix to form a composite superconducting wire.

Abstract translation: 一种超导线，其包括形成在基线上的基线和至少一个超导层。 可以通过使用用于在基线上沉积高温超导体材料的膜的溅射系统来形成超导层。 超导线还可以包括粘合层，扩散阻挡层和/或保护层。 可以将几根超导线组合在金属基体中以形成复合超导线。

公开(公告)号：US5196102A

公开(公告)日：1993-03-23

申请号：US741928

申请日：1991-08-08

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: C23C14/00 ,  C23C14/04 ,  C23C14/22

CPC classification number: C23C14/221 ,  C23C14/0021 ,  C23C14/048

Abstract: A method of applying a compound of a metal and a reactive gas onto a surface by depositing a metal from a liquid metal cluster ion source onto said surface in the presence of a gas on the surface to combine with the deposited metal while isolating the gas from the source of the metal cluster ions.

Abstract translation: 一种通过在表面存在气体的情况下将金属从液态金属簇离子源沉积到所述表面上以将金属和反应性气体的化合物施加到表面上以与沉积的金属结合的方法，同时将气体从 金属簇离子的来源。

公开(公告)号：US20120233265A1

公开(公告)日：2012-09-13

申请号：US13043469

申请日：2011-03-09

Applicant: George Joy ,  Nalin Kumar ,  Ravikant Cherukuri

Inventor： George Joy ,  Nalin Kumar ,  Ravikant Cherukuri

IPC: G06F15/16

CPC classification number: H04L65/105 ,  G06Q50/01 ,  H04L61/30 ,  H04L67/28 ,  H04L67/306

Abstract: The claimed subject matter provides a system and/or method for establishing proxy communications between users on a social network. An exemplary method includes creating an alias on a primary social network when a user logs in to the primary social network, wherein the alias comprises the user's identity on a secondary social network. The method further includes creating a cache comprising a map relating a second user's identity on the primary social network to the second user's identity on a secondary social network, wherein the creation of the map is based, at least in part, on the user and the second user being identified as friends in the secondary social network. Communications from the user to the second user are directed through the primary social network based, at least in part, on the map. The communications are formatted to appear as if they were sent from the user's account on the secondary social network.

Abstract translation: 所要求保护的主题提供用于在社交网络上的用户之间建立代理通信的系统和/或方法。 示例性方法包括当用户登录到主要社交网络时在主社交网络上创建别名，其中所述别名包括次要社交网络上的用户身份。 该方法还包括创建一个高速缓存，其包括将主社交网络上的第二用户身份与次社会网络上的第二用户身份相关联的地图，其中，该映射的创建至少部分地基于用户和 在第二社交网络中将第二用户识别为朋友。 至少部分地，在地图上，从用户到第二用户的通信被引导通过主要社交网络。 通信格式被格式化，就像从次社会网络上的用户帐户发送一样。

公开(公告)号：US20050017173A1

公开(公告)日：2005-01-27

申请号：US10891224

申请日：2004-07-14

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: G01N23/22 ,  G01N23/00

CPC classification number: G01N23/22

Abstract: This invention describes a novel method for nanoscale detection, imaging, manipulation and characterization of living cells and biological molecules comprising the steps of: providing an array of one or more nanoelectrodes fabricated on a chip, where the nanoelectrodes extend from one side of the chip to the other; placing living cells and biological molecules on the nanoelectrodes on one side of the chip; applying a focused electron beam in a predetermined manner on one or more nanoelectrodes on the other side of the chip; determining the electrical voltage on each nanoelectrode by measuring the emitted electron current from each nanoelectrode.

Abstract translation: 本发明描述了用于生物细胞和生物分子的纳米尺度检测，成像，操作和表征的新方法，包括以下步骤：提供在芯片上制造的一个或多个纳米电极的阵列，其中纳米电极从芯片的一侧延伸到 另一个; 将活细胞和生物分子置于芯片一侧的纳米电极上; 以预定方式将聚焦电子束施加在芯片另一侧的一个或多个纳米电极上; 通过测量每个纳米电极发射的电子电流来确定每个纳米电极上的电压。