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    Component having a multiple quantum well structure
    33.
    发明授权
    Component having a multiple quantum well structure 有权

    公开(公告)号：US10249787B2

    公开(公告)日：2019-04-02

    申请号：US15559409

    申请日：2016-03-01

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tobias Meyer ,  Thomas Lehnhardt ,  Matthias Peter ,  Asako Hirai ,  Juergen Off ,  Philipp Drechsel ,  Peter Stauss

    IPC: H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01L33/06 ,  H01S5/34 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32

    Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

    Optoelectronic semiconductor chip
    34.
    发明授权
    Optoelectronic semiconductor chip 有权

    公开(公告)号：US10164134B2

    公开(公告)日：2018-12-25

    申请号：US15557600

    申请日：2016-03-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

    IPC: H01L31/0352 ,  H01L29/15 ,  H01L33/06

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

    OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT
    39.
    发明申请
    OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT 有权
    光电子元件和生产光电元件的方法

    公开(公告)号：US20160049543A1

    公开(公告)日：2016-02-18

    申请号：US14782911

    申请日：2014-03-24

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Tobias Meyer ,  Christian Leirer ,  Lorenzo Zini ,  Jürgen Off ,  Andreas Löffler ,  Adam Bauer

    IPC: H01L33/02 ,  H01L33/00 ,  H01L33/14

    CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/14 ,  H01L33/382

    Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

    Abstract translation: 光电器件包括其上施加有半导体层序列的载体，所述半导体层序列包括n掺杂半导体层和p掺杂半导体层，使得形成包含产生电磁辐射的有源区的pn结， 其中所述n掺杂半导体层和所述p掺杂半导体层中的至少一个包括在包括所述区域的所述半导体层中的所述区域的周围区域中具有大于第二掺杂浓度的第一掺杂浓度的掺杂区域。

    Optoelectronic Semiconductor Device and Method for Producing an Optoelectronic Semiconductor Device
    40.
    发明申请
    Optoelectronic Semiconductor Device and Method for Producing an Optoelectronic Semiconductor Device 有权
    光电子半导体器件及其制造方法

    公开(公告)号：US20160027976A1

    公开(公告)日：2016-01-28

    申请号：US14773805

    申请日：2014-03-07

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Lorenzo Zini ,  Tobias Meyer

    IPC: H01L33/58 ,  H01L33/50 ,  H01L33/62 ,  H01L33/32

    CPC classification number: H01L33/58 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0058 ,  H01L2933/0066

    Abstract: An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one side surface and wherein a part of the electromagnetic radiation exits through the side surface during operation of the semiconductor chip. The semiconductor component additionally has at least one deflecting element that is formed to be transmissive to radiation. The deflecting element and the semiconductor chip are arranged one alongside another. The deflecting element is arranged at the side surface of the semiconductor chip. The deflecting element has a material, the index of refraction of which is greater than an average index of refraction of a semiconductor material of the semiconductor chip.

    Abstract translation: 光电子半导体部件具有至少一个用于发射电磁辐射的半导体芯片。 半导体芯片具有至少一个侧表面，并且其中一部分电磁辐射在半导体芯片的操作期间通过侧表面离开。 半导体部件另外具有形成为对辐射透射的至少一个偏转元件。 偏转元件和半导体芯片沿着另一个排列。 偏转元件布置在半导体芯片的侧表面。 偏转元件具有材料，其折射率大于半导体芯片的半导体材料的平均折射率。

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