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    Semiconductor layer sequence and method for producing a semiconductor layer sequence
    2.
    发明授权
    Semiconductor layer sequence and method for producing a semiconductor layer sequence 有权

    公开(公告)号：US11018277B2

    公开(公告)日：2021-05-25

    申请号：US16340066

    申请日：2017-10-24

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Werner Bergbauer ,  Lise Lahourcade ,  Jürgen Off

    IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

    摘要： A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.

    Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip
    6.
    发明授权
    Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip 有权

    公开(公告)号：US10950752B2

    公开(公告)日：2021-03-16

    申请号：US16067955

    申请日：2017-02-22

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Lise Lahourcade ,  Philipp Drechsel

    IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/24

    摘要： A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.

    Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip
    8.
    发明授权
    Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip 有权
    半导体层序列和操作光电子半导体芯片的方法

    公开(公告)号：US09553231B2

    公开(公告)日：2017-01-24

    申请号：US14769831

    申请日：2014-04-11

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Tobias Meyer ,  Jürgen Off

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/10 ,  H01S5/343 ,  H01S5/34 ,  H01L33/32 ,  H05B33/08 ,  H01L33/08 ,  H01S5/30

    CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/1096 ,  H01S5/3086 ,  H01S5/3408 ,  H01S5/34333 ,  H05B33/0803

    摘要： The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N≧2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

    摘要翻译： 半导体层序列包括n导电层，p导电层和位于它们之间的有源区。 有源区包括N≥2的N个量子阱。 在第一电流密度的第一工作点（W1）处，量子阱具有第一发射波长，并且在第二工作点（W2）处具有第二电流密度，具有第二发射波长。 第一发射波长中的至少两个彼此不同，并且至少一些第二发射波长与第一发射波长不同。 第一电流密度小于第二电流密度，并且电流密度彼此至少彼此不同。

    Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip
    10.
    发明申请
    Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip 有权

    公开(公告)号：US20210210651A1

    公开(公告)日：2021-07-08

    申请号：US17206911

    申请日：2021-03-19

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

    IPC分类号： H01L31/18 ,  H01L33/12 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L31/0304 ,  H01L33/32

    摘要： In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.