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公开(公告)号:US20140065838A1
公开(公告)日:2014-03-06
申请号:US13600264
申请日:2012-08-31
IPC分类号: H01L21/3105 , H01L21/318 , H01L21/316
CPC分类号: H01L21/02178 , C23C16/04 , C23C16/45525 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/02334 , H01L21/0234 , H01L21/02348 , H01L29/4908 , H01L29/66765
摘要: A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A second inorganic thin film dielectric material layer is deposited on the treated surface of the first inorganic thin film dielectric material layer using an atomic layer deposition process.
摘要翻译: 无机薄膜电介质材料层的制造方法包括提供基板。 使用原子层沉积工艺在衬底上沉积第一无机薄膜电介质材料层。 第一种无机薄膜介电材料层在沉积后进行处理。 使用原子层沉积工艺在第一无机薄膜电介质材料层的处理表面上沉积第二无机薄膜电介质材料层。
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公开(公告)号:US20140065803A1
公开(公告)日:2014-03-06
申请号:US13600292
申请日:2012-08-31
CPC分类号: C23C16/042 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02304 , H01L21/02422 , H01L21/02488 , H01L21/02521 , H01L21/02642 , H01L29/4908 , H01L29/66765
摘要: A method of producing an inorganic multi-layered thin film structure includes providing a substrate. A patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process. A second inorganic thin film material layer is selectively deposited on the region of the substrate where the thin film deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要翻译: 无机多层薄膜结构体的制造方法包括提供基板。 在衬底上设置有图案化的沉积抑制材料层。 使用原子层沉积工艺,在不存在沉积抑制材料层的基板的区域上选择性地沉积第一无机薄膜材料层。 使用原子层沉积工艺,在不存在薄膜沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜材料层。
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公开(公告)号:US08623757B2
公开(公告)日:2014-01-07
申请号:US13248560
申请日:2011-09-29
申请人: Shelby F. Nelson , David H. Levy , Lee W. Tutt
发明人: Shelby F. Nelson , David H. Levy , Lee W. Tutt
IPC分类号: H01L21/336
CPC分类号: H01L29/78642
摘要: Producing a vertical transistor includes providing a substrate including a gate material layer stack with a reentrant profile. A patterned deposition inhibiting material is deposited over a portion of the gate material layer stack and over a portion of the substrate. An electrically insulating material layer is deposited over a portion of the gate material layer stack and over a portion of the substrate using a selective area deposition process in which the electrically insulating material layer is not deposited over the patterned deposition inhibiting material. A semiconductor material layer is deposited over the electrically insulating material layer.
摘要翻译: 制造垂直晶体管包括提供包括具有折入轮廓的栅极材料层叠层的衬底。 图案化的沉积抑制材料沉积在栅极材料层堆叠的一部分上并在衬底的一部分上方。 使用选择性区域沉积工艺在栅极材料层堆叠的一部分上并在衬底的一部分上沉积电绝缘材料层,其中电绝缘材料层不沉积在图案化的沉积抑制材料上。 在电绝缘材料层上沉积半导体材料层。
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公开(公告)号:US08273654B1
公开(公告)日:2012-09-25
申请号:US13248576
申请日:2011-09-29
申请人: Shelby F. Nelson , David H. Levy , Lee W. Tutt
发明人: Shelby F. Nelson , David H. Levy , Lee W. Tutt
IPC分类号: H01L21/4763
CPC分类号: H01L29/78642
摘要: Producing a vertical transistor includes providing a substrate including a gate material layer stack with a reentrant profile. An electrically insulating material layer is deposited over a portion of the gate material layer stack and over a portion of the substrate. A patterned deposition inhibiting material is deposited over the electrically insulating material layer. A semiconductor material layer is deposited over the electrically insulating material layer using a selective area deposition process in which the semiconductor material layer is not deposited over the patterned deposition inhibiting material.
摘要翻译: 制造垂直晶体管包括提供包括具有折入轮廓的栅极材料层叠层的衬底。 电绝缘材料层沉积在栅极材料层堆叠的一部分上并在衬底的一部分上方。 图案化的沉积抑制材料沉积在电绝缘材料层上。 使用选择性区域沉积工艺在电绝缘材料层上沉积半导体材料层,其中半导体材料层不沉积在图案化的沉积抑制材料上。
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公开(公告)号:US20110097489A1
公开(公告)日:2011-04-28
申请号:US12606220
申请日:2009-10-27
申请人: Roger S. Kerr , David H. Levy , Shelby F. Nelson
发明人: Roger S. Kerr , David H. Levy , Shelby F. Nelson
CPC分类号: C23C16/45551 , C23C16/45563 , C23C16/45574 , C23C16/45591 , Y10T137/87571
摘要: A fluid conveyance device for thin film material deposition includes a fluid distribution manifold, a primary chamber, and a secondary fluid source. The fluid distribution manifold includes an output face that is connected in fluid communication to the primary chamber. The secondary fluid source is connected in fluid communication to the primary chamber through a plurality of conveyance ports.
摘要翻译: 用于薄膜材料沉积的流体输送装置包括流体分配歧管,初级室和次级流体源。 流体分配歧管包括与主室流体连通地连接的输出面。 二次流体源通过多个输送口与主室流体连通。
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公开(公告)号:US09236509B2
公开(公告)日:2016-01-12
申请号:US14260687
申请日:2014-04-24
申请人: David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, Jr. , Theodore Zubil
发明人: David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, Jr. , Theodore Zubil
IPC分类号: H01L21/76 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号: H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.
摘要翻译: 用于生产纳米级织构的低反射率表面的系统和方法可用于制造太阳能电池。 可以在蚀刻工艺之前用抗蚀剂图案化衬底,其在衬底的表面上产生纳米尺度的纹理。 此外,可以对衬底进行掺杂剂扩散处理。 在掺杂剂扩散之前,衬底可以任选地进行液相沉积以沉积允许图案化掺杂的材料。 可以根据需要修改纳米尺度纹理蚀刻和掺杂剂扩散的顺序以产生纳米后发射体或预纳米发射体。
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公开(公告)号:US08420168B2
公开(公告)日:2013-04-16
申请号:US13466507
申请日:2012-05-08
申请人: Roger S. Kerr , David H. Levy , James T. Murray
发明人: Roger S. Kerr , David H. Levy , James T. Murray
IPC分类号: C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号: B05B1/005 , C23C16/45551 , C23C16/45574 , Y10T29/494 , Y10T29/49432 , Y10T29/49826 , Y10T137/0318 , Y10T137/87249
摘要: A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.
摘要翻译: 用于薄膜材料沉积的递送装置具有至少第一,第二和第三入口端口,用于分别接收用于第一,第二和第三气态材料的共同供应。 第一,第二和第三细长发射通道中的每一个允许与对应的第一,第二和第三入口端口之一的气态流体连通。 输送装置可以由孔板形成,叠加以形成互连供应室的网络,并且引导通道用于将每个气态材料从其相应的入口端口路由到相应的多个细长的发射通道。 输送装置包括由相对板之间的浮雕图案形成的扩散通道。 还公开了一种用于薄膜沉积的方法。 最后,更一般地,公开了一种流扩散器和相应的扩散流的方法。
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公开(公告)号:US20120231239A1
公开(公告)日:2012-09-13
申请号:US13474757
申请日:2012-05-18
CPC分类号: H01L27/1288 , G03F7/2016 , G03F7/2018 , G03F7/40 , H01L27/1214 , H01L27/1225 , H01L29/66765 , H01L29/7869 , Y10T428/24851
摘要: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.
摘要翻译: 本发明涉及一种用于形成结构的方法,包括提供支撑体,用彩色掩模涂覆所述支撑体的一侧,涂覆可见光的可见光层,以及通过可见光将层暴露于彩色掩模以对该层进行光图案化。
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公开(公告)号:US08153352B2
公开(公告)日:2012-04-10
申请号:US11986088
申请日:2007-11-20
申请人: Lyn M. Irving , David H. Levy , Lan B. Thai
发明人: Lyn M. Irving , David H. Levy , Lan B. Thai
IPC分类号: G03F7/20
CPC分类号: H01L27/1288 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/3244 , H01L29/66765 , H01L29/7869 , H01L2227/323 , Y10T428/24802
摘要: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.
摘要翻译: 公开了一种用于形成像素电路的工艺,包括:(a)提供透明支撑体; (b)形成具有至少四种不同颜色图案的多色蒙版; (c)形成像素电路的集成电子部件,其具有至少四层图案化的功能材料,其包括第一导体,电介质,半导体和第二导体,每层图案化的功能材料层对应于四个不同颜色图案 多色面膜 使用对应于每个颜色图案的光图案来对功能材料进行图案化。
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公开(公告)号:US20120070942A1
公开(公告)日:2012-03-22
申请号:US13303513
申请日:2011-11-23
IPC分类号: H01L21/56
CPC分类号: B05D5/00 , C23C16/403 , C23C16/405 , C23C16/45551 , C23C16/45574 , H01L51/5253
摘要: A thin film environmental barrier encapsulation process includes providing an electronic device on a substrate, a first reactant gaseous material, a second reactant gaseous material, an inert gaseous material; and a delivery head through which the reactant gaseous materials and the inert gaseous material are simultaneously directed toward the electronic device and the substrate. One or more of the reactant gaseous materials and the inert gaseous material flows through the delivery head. The flow of the one or more of the reactant gaseous materials and the inert gaseous material generates a pressure to create a gas fluid bearing that maintains a substantially uniform distance between the delivery head and the substrate. Relative motion between the delivery head and the substrate causes the second reactant gaseous material to react with at least a portion of the electronic device and the substrate that has been treated with the first reactant gaseous material.
摘要翻译: 薄膜环境屏障封装方法包括在基底上提供电子器件,第一反应物气态材料,第二反应物气态物质,惰性气态物质; 以及输送头,反应物气体材料和惰性气体材料通过该输送头同时朝向电子装置和基板。 一种或多种反应物气态物质和惰性气体物质流过输送头。 一种或多种反应物气态物质和惰性气体物质的流动产生压力以产生在输送头和基底之间保持基本均匀距离的气体流体轴承。 输送头和基底之间的相对运动导致第二反应物气态物质与已经用第一反应物气态物质处理的电子器件和基底的至少一部分反应。
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