公开(公告)号：US20110107595A1

公开(公告)日：2011-05-12

申请号：US13008928

申请日：2011-01-19

申请人： Manfred Schneegans ,  Markus Leicht ,  Stefan Woehlert ,  Edmund Riedl

发明人： Manfred Schneegans ,  Markus Leicht ,  Stefan Woehlert ,  Edmund Riedl

IPC分类号： H01L21/58

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05611 ,  H01L2224/37147 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45611 ,  H01L2224/45647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/48475 ,  H01L2224/48611 ,  H01L2224/48711 ,  H01L2224/48799 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85411 ,  H01L2224/85815 ,  H01L2224/85825 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/19042 ,  H01L2924/20751 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48811 ,  H01L2924/013 ,  H01L2924/01006

摘要： A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.

摘要翻译： 一种将半导体芯片电连接到另一个电子设备的方法，包括提供包括接触引脚和附接到载体的芯片的载体，所述芯片具有背离载体的铜接触焊盘，在接触引脚之间延伸铜电连接器 以及接触焊盘，并且使用包括锡的焊料材料将铜电连接器扩散焊接到有源区域，以形成包括布置在铜电连接器和接触焊盘两者之间并且与铜电连接器和接触焊盘两者直接接触的连续青铜镀层的焊料连接。

公开(公告)号：US20100330744A1

公开(公告)日：2010-12-30

申请号：US12877577

申请日：2010-09-08

申请人： Dirk Muller ,  Manfred Schneegans ,  Sokratis Sgouridis

发明人： Dirk Muller ,  Manfred Schneegans ,  Sokratis Sgouridis

IPC分类号： H01L21/3205 ,  H01L21/78 ,  H01L21/50

CPC分类号： H01L24/05 ,  H01L23/5258 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.

摘要翻译： 本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。 半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。 电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。 由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。 此外，由此提高了半导体电路的防潮性。

公开(公告)号：US07757390B2

公开(公告)日：2010-07-20

申请号：US11759267

申请日：2007-06-07

申请人： Manfred Schneegans ,  Karsten Guth ,  Ivan Galesic

发明人： Manfred Schneegans ,  Karsten Guth ,  Ivan Galesic

IPC分类号： H05K3/30 ,  B23K37/00

CPC分类号： H01L24/83 ,  H01L24/32 ,  H01L24/75 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/83121 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/3511 ,  H01R43/0263 ,  H01R43/205 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53178 ,  H01L2924/00014

摘要： A bonding head includes a pressure plate to press a component (e.g., a semiconductor chip) onto a substrate. The pressure plate includes a holding surface configured to hold the component and to allow the component to be pressed uniformly onto the substrate, thus allowing a particularly reliable connection. The bonding head can further include an apparatus configured to vary the curvature of the holding surface of the pressure plate.

摘要翻译： 接合头包括将部件（例如，半导体芯片）按压到基板上的压力板。 压板包括保持表面，该保持表面构造成保持该部件，并允许该部件均匀地压在该基板上，从而允许特别可靠的连接。 接合头还可以包括被配置为改变压板的保持​​表面的曲率的装置。

公开(公告)号：US20080057834A1

公开(公告)日：2008-03-06

申请号：US11852885

申请日：2007-09-10

申请人： Werner Kroeninger ,  Manfred Schneegans

发明人： Werner Kroeninger ,  Manfred Schneegans

IPC分类号： B24B1/00 ,  B24B7/20

CPC分类号： H01L21/68757 ,  B24B37/30 ,  B24B41/068

摘要： A method and a device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

摘要翻译： 公开了一种在组装载体上处理晶片的方法和装置。 要处理的晶片可以通过冷冻膜而被固定在位于晶片的前侧和组装载体之间的液膜上。

公开(公告)号：US20080005893A1

公开(公告)日：2008-01-10

申请号：US11759267

申请日：2007-06-07

申请人： Manfred Schneegans ,  Karsten Guth ,  Ivan Galesic

发明人： Manfred Schneegans ,  Karsten Guth ,  Ivan Galesic

IPC分类号： G06F17/00 ,  G06F15/00 ,  B23P19/00

CPC分类号： H01L24/83 ,  H01L24/32 ,  H01L24/75 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/83121 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/3511 ,  H01R43/0263 ,  H01R43/205 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53178 ,  H01L2924/00014

摘要： A bonding head includes a pressure plate to press a component (e.g., a semiconductor chip) onto a substrate. The pressure plate includes a holding surface configured to hold the component and to allow the component to be pressed uniformly onto the substrate, thus allowing a particularly reliable connection. The bonding head can further include an apparatus configured to vary the curvature of the holding surface of the pressure plate.

摘要翻译： 接合头包括将部件（例如，半导体芯片）按压到基板上的压力板。 压板包括保持表面，该保持表面构造成保持该部件，并允许该部件均匀地压在该基板上，从而允许特别可靠的连接。 接合头还可以包括被配置为改变压板的保持​​表面的曲率的装置。

公开(公告)号：US06790737B2

公开(公告)日：2004-09-14

申请号：US10390872

申请日：2003-03-17

申请人： Manfred Schneegans ,  Wolfgang Jaeger ,  Michael Rogalli

发明人： Manfred Schneegans ,  Wolfgang Jaeger ,  Michael Rogalli

IPC分类号： H01L2120

CPC分类号： H01L27/1087 ,  H01L21/288

摘要： A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.

摘要翻译： 在半导体衬底的表面上制造金属层的方法包括提供具有表面的半导体衬底的步骤。 在这种情况下，要沉积的金属的前体化合物在半导体表面上冷凝，随后热分解。 该方法使得可以以高纵横比填充沟槽，可以有效地抑制空隙的形成。

公开(公告)号：US06633379B2

公开(公告)日：2003-10-14

申请号：US09877531

申请日：2001-06-08

申请人： Michael Roesner ,  Manfred Schneegans ,  David Wallis

发明人： Michael Roesner ,  Manfred Schneegans ,  David Wallis

IPC分类号： G01J328

CPC分类号： B24B37/005 ,  B23Q17/0909 ,  B23Q17/24 ,  B24B21/04 ,  B24B27/0683 ,  B24B49/12 ,  B24B49/183 ,  G01N21/65

摘要： A machining apparatus (10) comprises a material removing tool (12) movably mounted for removing material from a workpiece (14); means for illuminating (42, 54) a sample area upon a tool surface (34) with excitation radiation; means for receiving (42, 54) sample light emitted from the sample area; a spectral analyzer (54) for performing a spectral analysis of the sample light received; and means for determining (60) the condition of the tool at the sample area from the spectral analysis of the sample light. The wear of the tool (12) is determined as such a condition. Operation parameters of the machining apparatus (10) are adjusted according to the determined wear. An example application is a wafer dicing tool.

摘要翻译： 加工装置（ 10 ）包括可移动地安装以从工件去除材料的材料去除工具（ 12 HIL> 14 ）; 用于通过激发辐射照射（ 42,54 ）工具表面上的样品区域（ 34 ）的装置; 用于从样品区域发射的样品光的装置（ 42,54 ）。 用于对所接收的样本光进行光谱分析的光谱分析仪（ 54 ） 以及用于从样本光的光谱分析中确定（ 60 ）样品区域中的工具的条件的装置。 刀具的磨损（ 12 ）被确定为这样的条件。 根据确定的磨损调整加工装置（ 10 ）的操作参数。 示例应用是晶片切割工具。

公开(公告)号：US06268659B1

公开(公告)日：2001-07-31

申请号：US08937908

申请日：1997-09-25

申请人： Holger Huebner ,  Manfred Schneegans

发明人： Holger Huebner ,  Manfred Schneegans

IPC分类号： H01L2348

CPC分类号： H01L24/83 ,  B23K35/007 ,  B23K35/262 ,  B23K2035/008 ,  H01L23/4924 ,  H01L24/29 ,  H01L2224/04026 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253

摘要： A semiconductor body with a layer of solder material and a method for soldering the semiconductor body include a chromium layer applied to a rear side of the semiconductor body, and a tin layer applied to the chromium layer. The semiconductor is subsequently soldered directly to the metal substrate, that is without further additives, by being heated to temperatures above 250° C. This metal layer system for soldering power semiconductors to cooling bodies enables two metal layers to be dispensed with as compared with known four metal layer systems.

摘要翻译： 具有焊料层的半导体本体和用于焊接半导体本体的方法包括施加到半导体主体的后侧的铬层和施加到铬层的锡层。 随后将半导体通过加热到高于250℃的温度直接焊接到金属基底，即没有其他添加剂。用于将功率半导体焊接到冷却体的金属层系统使得与已知的两个金属层相比可以省去两个金属层 四个金属层系统。

公开(公告)号：US08753176B2

公开(公告)日：2014-06-17

申请号：US13035258

申请日：2011-02-25

申请人： Werner Kroeninger ,  Manfred Schneegans

发明人： Werner Kroeninger ,  Manfred Schneegans

IPC分类号： B24B47/10

CPC分类号： H01L21/68757 ,  B24B37/30 ,  B24B41/068

摘要： A device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

摘要翻译： 公开了一种用于在组装载体上处理晶片的装置。 要处理的晶片可以通过冷冻膜而被固定在位于晶片的前侧和组装载体之间的液膜上。

公开(公告)号：US08736054B2

公开(公告)日：2014-05-27

申请号：US13192376

申请日：2011-07-27

申请人： Manfred Schneegans ,  Jürgen Förster

发明人： Manfred Schneegans ,  Jürgen Förster

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 μm and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer adjoining a different layer of the multilayer metallization. The interlayer includes at least one of W, WTi, Ta, TaN, TiW, and TiN or other suitable compound metal or a metal silicide such as WSi, MoSi, TiSi, and TaSi.

摘要翻译： 用于半导体器件的布线结构包括总厚度为至少5μm的多层金属化层和布置在多层金属化中的中间层，其中邻接多层金属化层的一层的中间层的第一侧和中间层的第二相对侧 邻接多层金属化的不同层。 中间层包括W，WTi，Ta，TaN，TiW和TiN或其它合适的化合物金属或诸如WSi，MoSi，TiSi和TaSi的金属硅化物中的至少一种。