公开(公告)号：US06770565B2

公开(公告)日：2004-08-03

申请号：US10043561

申请日：2002-01-08

申请人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

发明人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

IPC分类号： H01L2302

CPC分类号： H01L21/6708 ,  C23F1/18 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/7684

摘要： A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

摘要翻译： 提供了在基板上平面化金属导电层的方法。 在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

公开(公告)号：US06641701B1

公开(公告)日：2003-11-04

申请号：US09594198

申请日：2000-06-14

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C1434

CPC分类号： H01J37/3497 ,  H01J37/3405

摘要： Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.

摘要翻译： 用于冷却磁控管溅射装置的装置和方法。 更具体地，包括固定导管，可旋转地联接到固定导管的中空驱动轴和耦合到中空驱动轴的磁控管的系统。

公开(公告)号：US06635157B2

公开(公告)日：2003-10-21

申请号：US09867780

申请日：2001-05-29

申请人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

发明人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC分类号： C25D1700

CPC分类号： H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

公开(公告)号：US06440261B1

公开(公告)日：2002-08-27

申请号：US09318233

申请日：1999-05-25

申请人： Avi Tepman ,  Donald J. K. Olgado ,  Allen L. D'Ambra

发明人： Avi Tepman ,  Donald J. K. Olgado ,  Allen L. D'Ambra

IPC分类号： H01L2100

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139

摘要： Apparatus for multi-chambered semiconductor wafer processing comprising a polygonal structure having at least two semiconductor process chambers disposed on one side. An area between the process chambers provides a maintenance access to the semiconductor processing equipment. Additionally, the apparatus may be clustered or daisy-chained together to enable a wafer to access additional processing chambers without leaving the controlled environment of the semiconductor wafer processing equipment.

摘要翻译： 用于多室半导体晶片处理的装置，包括具有设置在一侧上的至少两个半导体处理室的多边形结构。 处理室之间的区域提供对半导体处理设备的维护访问。 另外，该装置可以被集群或菊花链连接在一起，以使得晶片能够访问附加的处理室而不会离开半导体晶片处理设备的受控环境。

公开(公告)号：US06368469B1

公开(公告)日：2002-04-09

申请号：US08851946

申请日：1997-05-06

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06270859B1

公开(公告)日：2001-08-07

申请号：US09049856

申请日：1998-03-27

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C1634

摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

公开(公告)号：USD436609S1

公开(公告)日：2001-01-23

申请号：US29114734

申请日：1999-11-30

申请人： Avi Tepman

设计人： Avi Tepman

公开(公告)号：US5919345A

公开(公告)日：1999-07-06

申请号：US645783

申请日：1996-05-14

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3423 ,  H01J37/3405 ,  H01J37/347 ,  H01J2237/3327

摘要： A sputtering chamber includes a substrate support member, for positioning a substrate thereon, and a sputtering target therein. At least a portion of the sputtering surface of the target is located non-parallel to the substrate. In one aspect of the invention, the sputtering surface of the target is conical, and it tapers as it approaches the substrate.

摘要翻译： 溅射室包括用于在其上定位基板的基板支撑构件和其中的溅射靶。 靶的溅射表面的至少一部分位于不平行于衬底。 在本发明的一个方面，目标的溅射表面是圆锥形的，并且当其接近基板时它逐渐变细。

公开(公告)号：US5632873A

公开(公告)日：1997-05-27

申请号：US446396

申请日：1995-05-22

申请人： Joseph J. Stevens ,  Roy J. Edwards ,  Avi Tepman

发明人： Joseph J. Stevens ,  Roy J. Edwards ,  Avi Tepman

IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/687 ,  C23C14/34 ,  B05C13/00 ,  C23C16/04

CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585

摘要： A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield. In the event that a deposition material layer has formed between the substrate and the outer ring, the inner ring includes a plurality of tabs thereon which contact the substrate to force it out of the ring assembly as the inner ring continues downwardly after the outer ring has been positioned on the shield.

摘要翻译： 用于在衬底上沉积膜层的室包括支撑构件，衬底位于该支撑构件上用于在室中进行处理，以及环形组件，其悬挂在腔室屏蔽中的腔室中。 环组件包括第一和第二环，第二环设置在第一环和衬底之间。 支撑构件可定位在腔室中以在其上接收衬底，并且可进一步定位以使衬底穿过屏蔽件，从而将环组件提离屏蔽。 沉积完成后，支撑构件通过屏蔽件缩回，以将外环重新定位在屏蔽上。 在其被重新定位在护罩上之前，内环继续向下移动，衬底支撑构件短距离。 在衬底和外环之间形成沉积材料层的情况下，内圈包括多个接头，当外环具有内环时内环继续向下，接触衬底以将其压出环组件 被定位在盾牌上。

公开(公告)号：US5589224A

公开(公告)日：1996-12-31

申请号：US310617

申请日：1994-09-22

申请人： Avi Tepman ,  Takeshi Jinbo ,  Hiroyuki Takahama ,  Akihiko Saito

发明人： Avi Tepman ,  Takeshi Jinbo ,  Hiroyuki Takahama ,  Akihiko Saito

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/4585

摘要： The present invention provides a shield arrangement that prevents deposition in the area of the chamber surrounding the substrate. This shield arrangement is equipped with a wall-like member which surrounds a substrate, and includes a projecting annular flange and a substrate support which extends in the horizontal direction beyond the substrate, and includes a groove therein. The annular flange is received in the groove to shield the deposition region of the chamber from the remainder of the chamber.

摘要翻译： 本发明提供一种屏蔽装置，其防止在围绕衬底的腔室的区域中的沉积。 该屏蔽装置配备有围绕基板的壁状构件，并且包括突出的环形凸缘和在水平方向上延伸超过基板的基板支撑，并且在其中包括凹槽。 环形凸缘容纳在凹槽中，以将腔室的沉积区域与腔室的其余部分隔离。