公开(公告)号：US09754728B2

公开(公告)日：2017-09-05

申请号：US14032214

申请日：2013-09-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuhiro Inoue ,  Ryota Tajima ,  Tamae Moriwaka ,  Junpei Momo ,  Teppei Oguni ,  Kai Kimura ,  Kazutaka Kuriki ,  Shunpei Yamazaki

IPC: H01M4/133 ,  H01G9/042 ,  H01M4/36 ,  H01M4/02 ,  H01M4/134 ,  H01G11/06 ,  H01G11/26 ,  H01G11/50 ,  H01M10/0525

CPC classification number: H01G9/042 ,  H01G11/06 ,  H01G11/26 ,  H01G11/50 ,  H01M4/02 ,  H01M4/133 ,  H01M4/134 ,  H01M4/366 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13

Abstract: To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability.

公开(公告)号：US09735430B2

公开(公告)日：2017-08-15

申请号：US14598344

申请日：2015-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kai Kimura ,  Kazutaka Kuriki ,  Teppei Oguni ,  Aya Uchida

IPC: H01M4/13 ,  H01M4/62 ,  H01G11/28 ,  H01G11/24 ,  H01G11/26 ,  H01G11/38 ,  H01M4/133 ,  H01M10/0525 ,  H01M10/0566 ,  H01M10/44 ,  H01M4/02 ,  H01M10/42

CPC classification number: H01M4/622 ,  H01G11/24 ,  H01G11/26 ,  H01G11/28 ,  H01G11/38 ,  H01M4/13 ,  H01M4/133 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0566 ,  H01M10/446 ,  H01M2004/021 ,  H01M2010/4292 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with high capacity or high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode includes an active material, a first binder, and a second binder. The specific surface area of the active material is S [m2/g]. The weight of the active material, the weight of the first binder, and the weight of the second binder are a, b, and c, respectively. The solution of {(b+c)/(a+b+c)}×100÷S is 0.3 or more. The electrode includes a first film in contact with the active material. The first film preferably includes a region in contact with the active material. The first film preferably includes a region with a thickness of 2 nm or more and 20 nm or less. The first film contains a water-soluble polymer.

公开(公告)号：US09142358B2

公开(公告)日：2015-09-22

申请号：US13800544

申请日：2013-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazutaka Kuriki

IPC: H01G9/048 ,  H01M4/74 ,  H01G11/04 ,  H01G11/08 ,  H01G11/28 ,  H01G11/70 ,  H01M4/131 ,  H01M10/052

CPC classification number: H01G9/048 ,  H01G11/04 ,  H01G11/08 ,  H01G11/28 ,  H01G11/70 ,  H01M4/131 ,  H01M4/74 ,  H01M10/052 ,  Y02E60/13

Abstract: Provided is a power storage device having a high discharge capacitance and a light-transmitting property. The power storage device includes a first current collector having a net-like planar shape; a first active material layer over the first current collector; a solid electrolyte layer over the first active material layer; a second active material layer over the solid electrolyte layer; and a second current collector over the second active material layer.

Abstract translation: 提供具有高放电电容和透光性的蓄电装置。 蓄电装置具有网状平面形状的第一集电体， 在所述第一集电器上方的第一活性材料层; 第一活性物质层上的固体电解质层; 固体电解质层上的第二活性材料层; 以及在所述第二活性材料层上的第二集电体。

公开(公告)号：US08956934B2

公开(公告)日：2015-02-17

申请号：US13706841

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Miyako Nakajima ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Erika Kato ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

Abstract translation: 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US11848429B2

公开(公告)日：2023-12-19

申请号：US17676874

申请日：2022-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo ,  Shunpei Yamazaki

IPC: H01M10/46 ,  H02J50/20 ,  H01M10/0562 ,  H01M10/613 ,  H01L21/822 ,  H01L27/06 ,  H01M10/052 ,  H01M10/42 ,  H01M10/623 ,  A61N1/378 ,  G06F1/16 ,  H01L27/12 ,  H01L29/786 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M10/46 ,  A61N1/378 ,  G06F1/163 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/124 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/7869 ,  H01L29/78651 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/425 ,  H01M10/613 ,  H01M10/623 ,  H02J50/20 ,  H01M2220/30 ,  H01M2300/0071

Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

公开(公告)号：US11594770B2

公开(公告)日：2023-02-28

申请号：US16603487

申请日：2018-04-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka Kuriki ,  Ryota Tajima ,  Kouhei Toyotaka ,  Hideaki Shishido ,  Toshiyuki Isa

IPC: H01M10/48 ,  G06N3/04 ,  G06N3/063 ,  H01M10/44 ,  H02J7/00

Abstract: A power storage system with excellent characteristics is provided. A power storage system with a high degree of safety is provided. A power storage system with less deterioration is provided. A storage battery with excellent characteristics is provided. The power storage system includes a neural network and a storage battery. The neural network includes an input layer, an output layer, and one or more hidden layers between the input layer and the output layer. The predetermined hidden layer is connected to the previous hidden layer or the previous input layer by a predetermined weight coefficient, and connected to the next hidden layer or the next output layer by a predetermined weight coefficient. In the storage battery, voltage and time at which the voltage is obtained are measured as one of sets of data. The sets of data measured at different times are input to the input layer and the operational condition of the storage battery is changed in accordance with a signal output from the output layer.

公开(公告)号：US11056516B2

公开(公告)日：2021-07-06

申请号：US16558396

申请日：2019-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazutaka Kuriki ,  Ryota Tajima ,  Tamae Moriwaka

IPC: H01M10/0565 ,  H01G11/46 ,  H01G11/56 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01G11/08 ,  H01G11/84 ,  H01L27/13 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.

公开(公告)号：US10903206B2

公开(公告)日：2021-01-26

申请号：US16238590

申请日：2019-01-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo

IPC: H01L27/07 ,  H01L27/06 ,  H01G11/14 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01G11/08 ,  H01L21/8258

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

公开(公告)号：US10461103B2

公开(公告)日：2019-10-29

申请号：US15677097

申请日：2017-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazutaka Kuriki ,  Ryota Tajima ,  Tamae Moriwaka

IPC: H01M10/0565 ,  H01G11/56 ,  H01L27/13 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01G11/46 ,  H01G11/08 ,  H01G11/84 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.

公开(公告)号：US10290908B2

公开(公告)日：2019-05-14

申请号：US15117349

申请日：2015-02-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo ,  Shunpei Yamazaki

IPC: H01M2/26 ,  H01M10/46 ,  H02J50/20 ,  H01M10/0562 ,  H01M10/613 ,  H01L21/822 ,  H01L27/06 ,  H01M10/052 ,  H01M10/42 ,  H01M10/623 ,  A61N1/378 ,  G06F1/16 ,  H01L27/12 ,  H01L29/786 ,  H01M10/0525 ,  H01M10/0585 ,  H02J7/02

Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.