公开(公告)号：US20220352384A1

公开(公告)日：2022-11-03

申请号：US17760836

申请日：2020-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Yoshinori ANDO ,  Shuhei NAGATSUKA ,  Tatsuki KOSHIDA ,  Satoru OHSHITA ,  Ryota HODO ,  Kazuki TSUDA ,  Akio SUZUKI

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

Abstract: A semiconductor device that is suitable for high integration is provided. A first layer provided with a first transistor including an oxide semiconductor, over a substrate; a second layer over the first layer; a third layer provided with a second transistor including an oxide semiconductor, over the second layer; a fourth layer between the first layer and the second layer; and a fifth layer between the second layer and the third layer are included. The total internal stress of the first layer and the total internal stress of the third layer act in a first direction, the total internal stress of the second layer acts in the direction opposite to the first direction, and the fourth layer and the fifth layer each include a film having a barrier property.

公开(公告)号：US20190341460A1

公开(公告)日：2019-11-07

申请号：US16511562

申请日：2019-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masashi OOTA

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/267 ,  H01L29/12 ,  H01L29/43

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US20170288023A1

公开(公告)日：2017-10-05

申请号：US15469943

申请日：2017-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/12 ,  H01L21/02 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L29/06 ,  H01L29/267

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02422 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/0692 ,  H01L29/12 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/42384 ,  H01L29/43 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US20170062192A1

公开(公告)日：2017-03-02

申请号：US15234347

申请日：2016-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Takuya KAWATA ,  Yasumasa YAMANE ,  Yuta ENDO

IPC: H01J37/34 ,  C23C14/35 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01J37/3405 ,  C23C14/08 ,  C23C14/345 ,  C23C14/35 ,  C23C14/352 ,  C23C14/56 ,  C23C14/564 ,  H01J37/3435 ,  H01J37/3452 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: An oxide with high crystallinity is provided. An oxide having a crystal structure with few defects is provided. An oxide with a low density of defect states is provided. An oxide with a low impurity concentration is provided. A film forming apparatus capable of forming a film of the above-described oxide can be provided. The film forming apparatus includes a target holder, a substrate holder, a first power source, and a second power source. The target holder is electrically connected to the first power source, the substrate holder is electrically connected to the second power source, and the second power source is configured to apply a potential that is higher than a ground potential.

Abstract translation: 提供了高结晶度的氧化物。 提供具有缺陷少的晶体结构的氧化物。 提供了具有低密度缺陷状态的氧化物。 提供了具有低杂质浓度的氧化物。 可以提供能够形成上述氧化物的膜的成膜装置。 成膜设备包括目标保持器，衬底保持器，第一电源和第二电源。 靶保持器电连接到第一电源，衬底保持器电连接到第二电源，并且第二电源被配置为施加高于地电位的电位。

公开(公告)号：US20150364610A1

公开(公告)日：2015-12-17

申请号：US14733081

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Masashi OOTA

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/10 ,  H01L21/02 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L21/84 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78696

Abstract: A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

Abstract translation: 半导体器件包括第一氧化物半导体膜，第一氧化物半导体膜上的第二氧化物半导体膜，与第二氧化物半导体膜接触的源极，与第二氧化物半导体膜接触的漏电极，金属氧化物膜 在第二氧化物半导体膜，源电极和漏极上，在金属氧化物膜上方的栅极绝缘膜，以及栅极绝缘膜上的栅电极。 金属氧化物膜含有M（M表示Ti，Ga，Y，Zr，La，Ce，Nd或Hf）和Zn。 当靶的原子比为M:Zn = x:y时，金属氧化物膜包括x /（x + y）大于0.67且小于或等于0.99的部分。

公开(公告)号：US20150311291A1

公开(公告)日：2015-10-29

申请号：US14734029

申请日：2015-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Abstract translation: 提供了包括氧化物半导体的高度可靠的半导体器件。 提供了一种半导体器件，包括氧化物半导体层，与氧化物半导体层接触的绝缘层，与氧化物半导体层重叠的栅极电极层，以及与氧化物半导体层电连接的源极电极层和漏极电极层 。 氧化物半导体层包括具有尺寸小于或等于10nm的晶体的第一区域和与其间设置有第一区域的绝缘层重叠的第二区域，并且其包括其c轴对准的晶体部分 与氧化物半导体层的表面的法线矢量平行的方向。

公开(公告)号：US20150064840A1

公开(公告)日：2015-03-05

申请号：US14464932

申请日：2014-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Masashi OOTA ,  Yoshinori YAMADA

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming a single crystal oxide film with high productivity is provided. Further, a method for forming a single crystal oxide film at a lower temperature is provided. In addition, a method for forming a single crystal oxide film by a simpler method is provided. An oxide film having crystal parts is formed over a formation surface, and the oxide film is single crystallized by performing heat treatment. Further, an oxide film having crystal parts in which the c-axis are aligned in a direction parallel to a normal direction of the formation surface or a normal direction of a surface of the oxide film and having no crystal grain boundary between the crystal parts is used as the oxide film formed over the formation surface.

Abstract translation: 提供了一种以高生产率形成单晶氧化膜的方法。 此外，提供了在较低温度下形成单晶氧化物膜的方法。 此外，提供了通过更简单的方法形成单晶氧化物膜的方法。 在形成表面上形成具有晶体部分的氧化膜，通过进行热处理，氧化膜单一结晶。 此外，具有晶体部分的氧化物膜，其中c轴在平行于形成表面的法线方向的方向上或氧化膜的表面的法线方向上排列，并且在晶体部件之间不具有晶界边界 用作形成在形成表面上的氧化膜。

公开(公告)号：US20150048365A1

公开(公告)日：2015-02-19

申请号：US14496500

申请日：2014-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Masashi OOTA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US20150034947A1

公开(公告)日：2015-02-05

申请号：US14444789

申请日：2014-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Koji DAIRIKI ,  Masahiro TAKAHASHI

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.

Abstract translation: 可以提供可用作晶体管等的半导体膜的结晶氧化物半导体膜。 特别地，提供了具有较少缺陷如晶界的结晶氧化物半导体膜。 本发明的一个实施方案是一种结晶氧化物半导体膜，其设置在基板上并且具有包括五个或更少区域的区域，其中当观察区域在一个范围内改变时观察到显示不连续点的透射电子衍射图案 使用具有探针直径为1nm的电子束的透射电子衍射装置。

公开(公告)号：US20140284597A1

公开(公告)日：2014-09-25

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Takahisa ISHIYAMA ,  Masaki KOYAMA ,  Erumu KIKUCHI ,  Takuya HIROHASHI ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。