公开(公告)号：US10804313B2

公开(公告)日：2020-10-13

申请号：US16001278

申请日：2018-06-06

Applicant: SONY CORPORATION

Inventor： Yoshihisa Kagawa ,  Nobutoshi Fujii ,  Masanaga Fukasawa ,  Tokihisa Kaneguchi ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Ikue Mitsuhashi

IPC: H01L27/146 ,  H01L25/065 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48

Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.

公开(公告)号：US10431618B2

公开(公告)日：2019-10-01

申请号：US15567289

申请日：2016-07-15

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US09941326B2

公开(公告)日：2018-04-10

申请号：US14989508

申请日：2016-01-06

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Hayato Iwamoto

IPC: H01L21/00 ,  H01L27/146 ,  H01L25/00 ,  H01L31/18 ,  H01L25/065

CPC classification number: H01L27/14687 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521 ,  H01L2924/00

Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.

公开(公告)号：US09716076B2

公开(公告)日：2017-07-25

申请号：US14827883

申请日：2015-08-17

Applicant: Sony Corporation

Inventor： Yoshiya Hagimoto ,  Nobutoshi Fujii ,  Kenichi Aoyagi

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L27/146 ,  H01L25/065 ,  H01L25/00 ,  H01L23/532

CPC classification number: H01L24/83 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/32 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2224/03845 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/081 ,  H01L2224/08147 ,  H01L2224/08501 ,  H01L2224/09181 ,  H01L2224/32146 ,  H01L2224/32501 ,  H01L2224/80895 ,  H01L2224/83895 ,  H01L2225/06524 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/13091 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

Abstract: There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode.

公开(公告)号：US09666627B2

公开(公告)日：2017-05-30

申请号：US14880957

申请日：2015-10-12

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146 ,  H01L21/20 ,  H01L21/768 ,  H04N5/225

CPC classification number: H01L27/14636 ,  H01L21/2007 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76864 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2254

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

公开(公告)号：US20160343762A1

公开(公告)日：2016-11-24

申请号：US15228860

申请日：2016-08-04

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US09111763B2

公开(公告)日：2015-08-18

申请号：US14467852

申请日：2014-08-25

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/768 ,  H01L27/146 ,  H04N5/369 ,  H01L27/06

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract translation: 本发明公开了一种半导体器件，包括：第一基板，包括第一电极和由用于第一电极的扩散防止材料构成的第一绝缘膜，并且覆盖第一电极的周边，第一电极和第一绝缘膜协作 彼此配置接合面; 以及第二基板，其接合并设置在所述第一基板上并且包括接合到所述第一电极的第二电极，以及由用于所述第二电极的扩散防止材料构成并覆盖所述第二电极的周边的第二绝缘膜，所述第二电极 并且所述第二绝缘膜彼此配合以配置到所述第一基板的接合面。

公开(公告)号：US20140284744A1

公开(公告)日：2014-09-25

申请号：US14206489

申请日：2014-03-12

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/2007 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76864 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2254

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

Abstract translation: 半导体器件包括具有第一电极和第一绝缘膜露出的附着面的第一基板，覆盖第一基板的安装面的绝缘薄膜和具有安装面的第二基板，第二基板 并且第二绝缘膜在第二基板的安装表面和第一基板的附接表面连接在一起的状态下暴露并附着到第一基板，夹住绝缘薄膜，并且第一电极和 第二电极使绝缘薄膜的一部分变形并断开，以便彼此直接电连接。

公开(公告)号：US20140120654A1

公开(公告)日：2014-05-01

申请号：US14147003

申请日：2014-01-03

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii

IPC: H01L21/762 ,  H01L31/18

CPC classification number: H01L27/1469 ,  H01L21/76251 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L31/18 ,  H04N5/374 ,  Y10T428/24421

Abstract: Disclosed herein is a method of manufacturing a bonded substrate, including the steps of: forming a first bonding layer on a surface on one side of a semiconductor substrate; forming a second bonding layer on a surface on one side of a support substrate; adhering the first bonding layer and the second bonding layer to each other; a heat treatment for bonding the first bonding layer and the second bonding layer to each other; and thinning the semiconductor substrate from a surface on the other side of the semiconductor substrate to form a semiconductor layer.

Abstract translation: 这里公开了一种制造键合衬底的方法，包括以下步骤：在半导体衬底的一侧的表面上形成第一接合层; 在支撑基板的一侧的表面上形成第二结合层; 将第一接合层和第二接合层彼此粘合; 用于将第一接合层和第二接合层彼此接合的热处理; 以及从所述半导体衬底的另一侧的表面使所述半导体衬底变薄以形成半导体层。

公开(公告)号：US10431621B2

公开(公告)日：2019-10-01

申请号：US15992908

申请日：2018-05-30

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L31/0232 ,  H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H04N5/369 ,  H01L23/528 ,  H01L23/532 ,  H01L23/48 ,  H01L27/06

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.